公开(公告)号：US20160204256A1

公开(公告)日：2016-07-14

申请号：US14912594

申请日：2013-09-26

申请人： Michael JACKSON ,  Anand MURTHY ,  Glenn GLASS ,  Saurabh MORARKA ,  Chandra MOHAPATRA

发明人： Michael Jackson ,  Anand MURTHY ,  Glenn GLASS ,  Saurabh MORARKA ,  Chandra MOHAPATRA

IPC分类号： H01L29/78 ,  H01L29/66 ,  H01L29/10

CPC分类号： H01L29/7848 ,  H01L29/0673 ,  H01L29/1033 ,  H01L29/1054 ,  H01L29/165 ,  H01L29/32 ,  H01L29/66568 ,  H01L29/66636 ,  H01L29/66795 ,  H01L29/785

摘要： Methods of forming a strained channel device utilizing dislocations disposed in source/drain structures are described. Those methods and structures may include forming a thin silicon germanium material in a source/drain opening of a device comprising silicon, wherein multiple dislocations are formed in the silicon germanium material. A source/drain material may be formed on the thin silicon germanium material, wherein the dislocations induce a tensile strain in a channel region of the device.

摘要翻译： 描述了利用设置在源极/漏极结构中的位错形成应变通道器件的方法。 这些方法和结构可以包括在包括硅的器件的源/漏开口中形成薄硅锗材料，其中在硅锗材料中形成多个位错。 源/漏材料可以形成在薄硅锗材料上，其中位错在器件的沟道区域中引起拉伸应变。

公开(公告)号：US20200211842A1

公开(公告)日：2020-07-02

申请号：US16232535

申请日：2018-12-26

申请人： Glenn GLASS ,  Sansaptak DASGUPTA ,  Han Wui THEN ,  Marko RADOSAVLJEVIC ,  Paul FISCHER ,  Anand MURTHY ,  Walid HAFEZ

发明人： Glenn GLASS ,  Sansaptak DASGUPTA ,  Han Wui THEN ,  Marko RADOSAVLJEVIC ,  Paul FISCHER ,  Anand MURTHY ,  Walid HAFEZ

IPC分类号： H01L21/02 ,  H01L29/20 ,  H01L29/205 ,  H01L29/778 ,  H01L27/092 ,  H01L23/00 ,  H01L29/66 ,  H01L21/306 ,  H01L21/8252

摘要： An integrated circuit structure comprises a relaxed buffer stack that includes a channel region, wherein the relaxed buffer stack and the channel region include a group III-N semiconductor material, wherein the relaxed buffer stack comprises a plurality of AlGaN material layers and a buffer stack over the plurality of AlGaN material layers, wherein the buffer stack comprises the group III-N semiconductor material and has a thickness of less than approximately 25 nm. A back barrier is in the relaxed buffer stack between the plurality of AlGaN material layers and the buffer stack, wherein the back barrier comprises an AlGaN material of approximately 2-10% Al. A polarization stack over the relaxed buffer stack.

公开(公告)号：US20200006480A1

公开(公告)日：2020-01-02

申请号：US16024706

申请日：2018-06-29

申请人： Cheng-Ying HUANG ,  Tahir GHANI ,  Jack KAVALIEROS ,  Anand MURTHY ,  Harold KENNEL ,  Gilbert DEWEY ,  Matthew METZ ,  Willy RACHMADY ,  Sean MA ,  Nicholas MINUTILLO

发明人： Cheng-Ying HUANG ,  Tahir GHANI ,  Jack KAVALIEROS ,  Anand MURTHY ,  Harold KENNEL ,  Gilbert DEWEY ,  Matthew METZ ,  Willy RACHMADY ,  Sean MA ,  Nicholas MINUTILLO

IPC分类号： H01L29/06 ,  H01L29/10 ,  H01L29/08 ,  H01L29/205 ,  H01L29/417 ,  H01L29/78 ,  H01L29/66 ,  H01L21/02

摘要： Embodiments herein describe techniques, systems, and method for a semiconductor device. Embodiments herein may present a semiconductor device having a channel area including a channel III-V material, and a source area including a first portion and a second portion of the source area. The first portion of the source area includes a first III-V material, and the second portion of the source area includes a second III-V material. The channel III-V material, the first III-V material and the second III-V material may have a same lattice constant. Moreover, the first III-V material has a first bandgap, and the second III-V material has a second bandgap, the channel III-V material has a channel III-V material bandgap, where the channel material bandgap, the second bandgap, and the first bandgap form a monotonic sequence of bandgaps. Other embodiments may be described and/or claimed.