Invention Application
US20160204326A1 FABRICATION OF STABLE ELECTRODE/DIFFUSION BARRIER LAYERS FOR THERMOELECTRIC FILLED SKUTTERUDITE DEVICES
有权
稳定电极/扩散障碍层的制造用于热电填充的SKUTTERUDITE设备
- Patent Title: FABRICATION OF STABLE ELECTRODE/DIFFUSION BARRIER LAYERS FOR THERMOELECTRIC FILLED SKUTTERUDITE DEVICES
- Patent Title (中): 稳定电极/扩散障碍层的制造用于热电填充的SKUTTERUDITE设备
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Application No.: US14873503Application Date: 2015-10-02
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Publication No.: US20160204326A1Publication Date: 2016-07-14
- Inventor: Qing Jie , Zhifeng Ren , Gang Chen
- Applicant: University of Houston System , Massachusetts Institute of Technology
- Applicant Address: US TX Houston US MA Cambridge
- Assignee: University of Houston System,Massachusetts Institute of Technology
- Current Assignee: University of Houston System,Massachusetts Institute of Technology
- Current Assignee Address: US TX Houston US MA Cambridge
- Main IPC: H01L35/14
- IPC: H01L35/14 ; H01L35/34

Abstract:
Disclosed are methods for the manufacture of n-type and p-type filled skutterudite thermoelectric legs of an electrical contact. A first material of CoSi2 and a dopant are ball-milled to form a first powder which is thermo-mechanically processed with a second powder of n-type skutterudite to form a n-type skutterudite layer disposed between a first layer and a third layer of the doped-CoSi2. In addition, a plurality of components such as iron, and nickel, and at least one of cobalt or chromium are ball-milled form a first powder that is thermo-mechanically processed with a p-type skutterudite layer to form a p-type skutterudite layer “second layer” disposed between a first and a third layer of the first powder. The specific contact resistance between the first layer and the skutterudite layer for both the n-type and the p-type skutterudites subsequent to hot-pressing is less than about 10.0 μΩ·cm2.
Public/Granted literature
- US09722164B2 Fabrication of stable electrode/diffusion barrier layers for thermoelectric filled skutterudite devices Public/Granted day:2017-08-01
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