发明申请
- 专利标题： Cobalt silicidation process for substrates comprised with a silicon-germanium layer
- 专利标题（中）： 用硅 - 锗层构成的衬底的硅化硅工艺
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申请号： US11714416申请日： 2007-03-06
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公开(公告)号： US20160240372A9公开(公告)日： 2016-08-18
- 发明人: Chien-Chao Huang , Yee-Chia Yeo , Chao-Hsiung Wang , Chun-Chieh Lin , Chenming Hu
- 申请人： Chien-Chao Huang , Yee-Chia Yeo , Chao-Hsiung Wang , Chun-Chieh Lin , Chenming Hu
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 优先权： TW92116010 20030612
- 主分类号： H01L29/76
- IPC分类号： H01L29/76
摘要：
A method comprises providing a semiconductor alloy layer on a semiconductor substrate, forming a gate structure on the semiconductor alloy layer, forming source and drain regions in the semiconductor substrate on both sides of the gate structure, removing at least a portion of the semiconductor alloy layer overlying the source and drain regions, and forming a metal silicide region over the source and drain regions.
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