Invention Application
- Patent Title: MODIFIED TUNGSTEN SILICON
- Patent Title (中): 改性钨铁
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Application No.: US14622997Application Date: 2015-02-16
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Publication No.: US20160240438A1Publication Date: 2016-08-18
- Inventor: Nicolas L. Breil , Domingo A. Ferrer , Keith Kwong Hon Wong
- Applicant: GLOBALFOUNDRIES INC.
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L27/112 ; H01L23/525
Abstract:
A method for forming a precision resistor or an e-fuse structure where tungsten silicon is used. The tungsten silicon layer is modified by changing the crystalline structure to a tetragonal tungsten silicon layer.
Public/Granted literature
- US10096609B2 Modified tungsten silicon Public/Granted day:2018-10-09
Information query
IPC分类:
