A semiconductor device includes a semiconductor layer, an electrode embedded from a surface of the semiconductor layer to an inside of the semiconductor layer and insulated by an insulation layer, and a structure in which a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, and a third semiconductor region of the first conductivity type are formed in this order from the surface of the semiconductor layer along the electrode via the insulation layer. The electrode is arranged at a position where no inversion layer is formed by a voltage supplied to the electrode in at least one of an interface of the first semiconductor region and the second semiconductor region and an interface of the second semiconductor region and the third semiconductor region.