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公开(公告)号：US20150264280A1
公开(公告)日：2015-09-17
申请号：US14641683
申请日：2015-03-09
Applicant: Kazuhiro YONEDA , Hirofumi WATANABE , Takaaki NEGORO , Katsuhiko AISU , Yasukazu NAKATANI , Katsuyuki SAKURANO
Inventor： Kazuhiro YONEDA , Hirofumi WATANABE , Takaaki NEGORO , Katsuhiko AISU , Yasukazu NAKATANI , Katsuyuki SAKURANO
CPC classification number: H04N5/374 , H04N5/35527
Abstract: An imaging device includes a photoelectric conversion element which photoelectrically converts incident light and generates a charge, accumulates and amplifies the charge, and outputs a photocurrent, wherein a level of an output signal when a charge which is accumulated in the photoelectric conversion element is outputted over a saturated amount of accumulable charge includes a level of an output signal of a charge of a photocurrent of DC component which is generated in the photoelectric conversion element and outputted during a readout time when the charge which is accumulated in the photoelectric conversion element is outputted.
Abstract translation: 一种成像装置包括光电转换入射光并产生电荷，累积和放大电荷并输出光电流的光电转换元件，其中当在光电转换元件中累积的电荷被输出时输出信号的电平 饱和量的可累加电荷包括在输出光电转换元件中蓄积的电荷时在光电转换元件中产生并输出的读出时间输出的DC分量的光电流的电荷的输出信号的电平。
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公开(公告)号：US10078010B2
公开(公告)日：2018-09-18
申请号：US14978172
申请日：2015-12-22
Applicant: Katsuhiko Aisu , Hirofumi Watanabe , Takaaki Negoro , Yoshinori Ueda , Yasukazu Nakatani , Kazuhiro Yoneda , Katsuyuki Sakurano
Inventor： Katsuhiko Aisu , Hirofumi Watanabe , Takaaki Negoro , Yoshinori Ueda , Yasukazu Nakatani , Kazuhiro Yoneda , Katsuyuki Sakurano
CPC classification number: G01J1/44 , G01J2001/444 , G01J2001/4473 , H04N5/361 , H04N5/3655 , H04N5/378
Abstract: A photoelectric conversion device includes a pixel cell including a phototransistor, a reference cell including a reference transistor having a temperature characteristic identical to that of the phototransistor and having a fixed electrical state, an analog-to-digital converter that converts an analog output of the pixel cell into a digital output, a correction amount computation unit that computes a correction amount for the digital output of the analog-to-digital converter based on an output of the reference cell and a reference value, and a correction unit that corrects the digital output of the analog-to-digital converter based on the correction amount.
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公开(公告)号：US09923019B2
公开(公告)日：2018-03-20
申请号：US14935973
申请日：2015-11-09
Applicant: Takaaki Negoro , Yoshinori Ueda , Katsuyuki Sakurano , Yasukazu Nakatani , Kazuhiro Yoneda , Katsuhiko Aisu
Inventor： Takaaki Negoro , Yoshinori Ueda , Katsuyuki Sakurano , Yasukazu Nakatani , Kazuhiro Yoneda , Katsuhiko Aisu
IPC: H01L31/0224 , H04N5/378 , H04N5/361 , H01L31/0352 , H01L31/18 , H01L27/146
CPC classification number: H01L27/14681 , H01L27/14612
Abstract: A semiconductor device for converting incident light into an electric current includes a semiconductor substrate; an electrode embedded in the semiconductor substrate; an insulation film contacting the electrode in the semiconductor substrate; a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type and a third semiconductor region of the first conductivity type, formed sequentially in a depth direction from a side of a front face of the semiconductor substrate; and a fourth semiconductor region of the second conductivity type contacting the insulation film and the second semiconductor region. An impurity concentration of the fourth semiconductor region is greater than an impurity concentration of the second semiconductor region.
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4.发明申请公开(公告)号：US20160027835A1
公开(公告)日：2016-01-28
申请号：US14788991
申请日：2015-07-01
Applicant: Kazuhiro Yoneda , Hirofumi Watanabe , Takaaki Negoro , Katsuhiko Hyogo , Yasukazu Nakatani , Katsuyuki Sakurano
Inventor： Kazuhiro Yoneda , Hirofumi Watanabe , Takaaki Negoro , Katsuhiko Hyogo , Yasukazu Nakatani , Katsuyuki Sakurano
IPC: H01L27/146 , H04N5/341 , H04N3/14
CPC classification number: H04N5/369 , H01L27/14603 , H01L27/1461 , H01L27/14612 , H01L27/1463 , H01L27/14638 , H01L27/14643
Abstract: An imaging device having phototransistors in photodetectors of pixels is disclosed. The imaging device includes an implanted electrode configured to separate the pixels, a first emitter disposed at a position adjacent to the implanted electrode, and a second emitter disposed such that a distance from the implanted electrode to the second emitter is longer than a distance from the implanted electrode to the first emitter.
Abstract translation: 公开了一种在像素的光电检测器中具有光电晶体管的成像装置。 成像装置包括被配置为分离像素的植入电极，设置在与植入电极相邻的位置处的第一发射体和布置成使得从注入电极到第二发射体的距离比距离植入电极 植入电极到第一发射极。
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公开(公告)号：US09749566B2
公开(公告)日：2017-08-29
申请号：US14641683
申请日：2015-03-09
Applicant: Kazuhiro Yoneda , Hirofumi Watanabe , Takaaki Negoro , Katsuhiko Aisu , Yasukazu Nakatani , Katsuyuki Sakurano
Inventor： Kazuhiro Yoneda , Hirofumi Watanabe , Takaaki Negoro , Katsuhiko Aisu , Yasukazu Nakatani , Katsuyuki Sakurano
CPC classification number: H04N5/374 , H04N5/35527
Abstract: An imaging device includes a photoelectric conversion element which photoelectrically converts incident light and generates a charge, accumulates and amplifies the charge, and outputs a photocurrent, wherein a level of an output signal when a charge which is accumulated in the photoelectric conversion element is outputted over a saturated amount of accumulable charge includes a level of an output signal of a charge of a photocurrent of DC component which is generated in the photoelectric conversion element and outputted during a readout time when the charge which is accumulated in the photoelectric conversion element is outputted.
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Patent Agency Ranking
公开(公告)号：US09478568B2
公开(公告)日：2016-10-25
申请号：US14305821
申请日：2014-06-16
Applicant: Katsuhiko Aisu , Takaaki Negoro , Kazuhiro Yoneda , Katsuyuki Sakurano , Hirofumi Watanabe
Inventor： Katsuhiko Aisu , Takaaki Negoro , Kazuhiro Yoneda , Katsuyuki Sakurano , Hirofumi Watanabe
IPC: H01L27/144 , H01L27/146 , H04N5/359 , H04N5/374 , H04N5/3745
CPC classification number: H01L27/144 , H01L27/14609 , H04N5/359 , H04N5/374 , H04N5/3745
Abstract: A photoelectric conversion device includes a first output line, a second output line; and a photoelectric conversion cell. The photoelectric conversion cell further includes, a photoelectric conversion element configured to generate an output current corresponding to an intensity of incident light, a first switch element configured to transmit the first output current to the first output line according to a first control signal, and a second switch element configured to transmit the second output current to second output line according to a second control signal. As a result, the photoelectric conversion device can be provided to generate rapidly the image data with wide dynamic range without the need for complex control outside of the photoelectric conversion device.
Abstract translation: 光电转换装置包括第一输出线，第二输出线， 和光电转换单元。 光电转换单元还包括：光电转换元件，被配置为产生与入射光强度相对应的输出电流;第一开关元件，被配置为根据第一控制信号将第一输出电流传输到第一输出线;以及 第二开关元件，被配置为根据第二控制信号将第二输出电流传输到第二输出线。 结果，可以提供光电转换装置以快速生成具有宽动态范围的图像数据，而不需要光电转换装置外部的复杂控制。
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7.发明申请PHOTOELECTRIC CONVERSION DEVICE, IMAGE GENERATION DEVICE, AND METHOD OF CORRECTING OUTPUT OF PHOTOELECTRIC CONVERSION DEVICE 审中-公开光电转换装置，图像生成装置和校正光电转换装置的输出的方法公开(公告)号：US20160195431A1
公开(公告)日：2016-07-07
申请号：US14978172
申请日：2015-12-22
Applicant: Katsuhiko Aisu , Hirofumi Watanabe , Takaaki Negoro , Yoshinori Ueda , Yasukazu Nakatani , Kazuhiro Yoneda , Katsuyuki Sakurano
Inventor： Katsuhiko Aisu , Hirofumi Watanabe , Takaaki Negoro , Yoshinori Ueda , Yasukazu Nakatani , Kazuhiro Yoneda , Katsuyuki Sakurano
IPC: G01J1/44
CPC classification number: G01J1/44 , G01J2001/444 , G01J2001/4473 , H04N5/361 , H04N5/3655 , H04N5/378
Abstract: A photoelectric conversion device includes a pixel cell including a phototransistor, a reference cell including a reference transistor having a temperature characteristic identical to that of the phototransistor and having a fixed electrical state, an analog-to-digital converter that converts an analog output of the pixel cell into a digital output, a correction amount computation unit that computes a correction amount for the digital output of the analog-to-digital converter based on an output of the reference cell and a reference value, and a correction unit that corrects the digital output of the analog-to-digital converter based on the correction amount.
Abstract translation: 光电转换装置包括具有光电晶体管的像素单元，具有与光电晶体管的温度特性相同的具有固定电气状态的参考晶体管的参考晶体管，转换模拟输出的模数转换器 像素单元转换为数字输出;校正量计算单元，其基于所述参考单元的输出和参考值计算所述模数转换器的数字输出的校正量，以及校正单元， 基于校正量的模数转换器的输出。
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公开(公告)号：US20150171129A1
公开(公告)日：2015-06-18
申请号：US14560037
申请日：2014-12-04
Applicant: Katsuyuki Sakurano , Takaaki Negoro , Katsuhiko Aisu , Kazuhiro Yoneda , Yasukazu Nakatani , Hirofumi Watanabe
Inventor： Katsuyuki Sakurano , Takaaki Negoro , Katsuhiko Aisu , Kazuhiro Yoneda , Yasukazu Nakatani , Hirofumi Watanabe
IPC: H01L27/146 , H01L31/113
CPC classification number: H01L31/1136 , H01L27/14614 , H01L27/14623 , H01L27/1463 , H01L27/14638 , H01L27/14643 , H01L27/14689
Abstract: A semiconductor device and a method of manufacturing a semiconductor device are disclosed. The method includes forming a trench, in a vertical direction of a semiconductor substrate having a plurality of photoelectric converting elements arranged on the semiconductor device, at positions between the photoelectric converting elements that are next to each other, forming a first conductive-material layer in and above the trench by implanting a first conductive material into the trench after an oxide film is formed on an inner wall of the trench, forming a first conductor by removing the first conductive-material layer excluding a first conductive portion of the first conductive-material layer implanted into the trench, and forming an upper gate electrode above the first conductor, the upper gate electrode configured to be conductive with the first conductor. The semiconductor device includes a semiconductor substrate, an image sensor, a trench, a first conductor, and an upper gate electrode.
Abstract translation: 公开了半导体器件和制造半导体器件的方法。 该方法包括在彼此相邻的光电转换元件之间的位置处形成在具有布置在半导体器件上的多个光电转换元件的半导体衬底的垂直方向上形成沟槽，形成第一导电材料层 并且在沟槽的内壁上形成氧化膜之后，通过将第一导电材料注入到沟槽中并在沟槽之上形成第一导体，通过除去除第一导电材料的第一导电部分之外的第一导电材料层 层，并且在第一导体上形成上栅电极，上栅电极被配置为与第一导体导电。 半导体器件包括半导体衬底，图像传感器，沟槽，第一导体和上部栅电极。
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公开(公告)号：US20150076572A1
公开(公告)日：2015-03-19
申请号：US14482092
申请日：2014-09-10
Applicant: Katsuyuki Sakurano , Hirobumi Watanabe , Takaaki Negoro , Katsuhiko Aisu , Kazuhiro Yoneda
Inventor： Katsuyuki Sakurano , Hirobumi Watanabe , Takaaki Negoro , Katsuhiko Aisu , Kazuhiro Yoneda
IPC: H01L27/146
CPC classification number: H01L27/1463 , H01L27/14609 , H01L27/14643 , H01L27/14689
Abstract: A semiconductor device includes a semiconductor substrate, a plurality of photoelectric conversion elements arranged on the semiconductor substrate to collectively form an image sensor, a plurality of trenches each formed between the photoelectric conversion elements adjacent to each other, and a plurality of impurity diffusion layers each provided at a bottom of the trench at a position deeper than a p-n junction of the photoelectric conversion element.
Abstract translation: 半导体器件包括半导体衬底，布置在半导体衬底上以共同形成图像传感器的多个光电转换元件，各自形成在彼此相邻的光电转换元件之间的多个沟槽，以及多个杂质扩散层 设置在比光电转换元件的pn结更深的位置处的沟槽的底部。
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公开(公告)号：US10298869B2
公开(公告)日：2019-05-21
申请号：US15187957
申请日：2016-06-21
Applicant: Katsuhiko Aisu , Yasukazu Nakatani , Kazuhiro Yoneda , Takaaki Negoro , Yoshinori Ueda , Katsuyuki Sakurano
Inventor： Katsuhiko Aisu , Yasukazu Nakatani , Kazuhiro Yoneda , Takaaki Negoro , Yoshinori Ueda , Katsuyuki Sakurano
Abstract: A photoelectric conversion device includes a photoelectric conversion unit which includes a phototransistor having a collector region, an emitter region, and a base region to generate an output current according to an intensity of incident light to the phototransistor, and a base potential setting unit which is configured to set up a base potential of the phototransistor so that the output current from the photoelectric conversion unit is equal to a predetermined current value.
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