Invention Application
US20160254164A1 METHOD FOR STRIPPING MODIFIED RESIST, MODIFIED-RESIST STRIPPER USED THEREFOR, AND METHOD FOR MANUFACTURING SEMICONDUCTOR-SUBSTRATE PRODUCT
审中-公开
用于剥离改性抗蚀剂的方法，其使用的改性剥离器及其制造半导体基材产品的方法
- Patent Title: METHOD FOR STRIPPING MODIFIED RESIST, MODIFIED-RESIST STRIPPER USED THEREFOR, AND METHOD FOR MANUFACTURING SEMICONDUCTOR-SUBSTRATE PRODUCT
- Patent Title (中): 用于剥离改性抗蚀剂的方法，其使用的改性剥离器及其制造半导体基材产品的方法
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Application No.: US15152620Application Date: 2016-05-12
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Publication No.: US20160254164A1Publication Date: 2016-09-01
- Inventor: Yasuo SUGISHIMA , Tetsuya KAMIMURA , Atsushi MIZUTANI
- Applicant: FUJIFILM Corporation
- Applicant Address: JP Tokyo
- Assignee: FUJIFILM Corporation
- Current Assignee: FUJIFILM Corporation
- Current Assignee Address: JP Tokyo
- Priority: JP2013-238343 20131118; JP2013-259532 20131216
- Main IPC: H01L21/311
- IPC: H01L21/311 ; G03F7/42
Abstract:
Provided is a stripping method for stripping a modified resist from a semiconductor substrate by applying an etching solution to the semiconductor substrate, in which the etching solution contains an alcohol compound and a quaternary ammonium hydroxide compound and the quaternary ammonium hydroxide compound is at least one of tetraethylammonium hydroxide and tetrabutylammonium hydroxide.
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