发明申请
- 专利标题: PRECURSORS AND METHODS FOR ATOMIC LAYER DEPOSITION OF TRANSITION METAL OXIDES
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申请号: US15157698申请日: 2016-05-18
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公开(公告)号: US20160258054A1公开(公告)日: 2016-09-08
- 发明人: Timo Hatanpaa , Jaakko Niinisto , Mikko Ritala , Markku Leskela , Suvi Haukka
- 申请人: ASM International N.V.
- 主分类号: C23C16/40
- IPC分类号: C23C16/40 ; C23C16/455
摘要:
Methods are provided herein for forming transition metal oxide thin films, preferably Group IVB metal oxide thin films, by atomic layer deposition. The metal oxide thin films can be deposited at high temperatures using metalorganic reactants. Metalorganic reactants comprising two ligands, at least one of which is a cycloheptatriene or cycloheptatrienyl (CHT) ligand are used in some embodiments. The metal oxide thin films can be used, for example, as dielectric oxides in transistors, flash devices, capacitors, integrated circuits, and other semiconductor applications.