Invention Application
- Patent Title: SPUTTERING TARGET AND METHOD OF PRODUCING SPUTTERING TARGET
- Patent Title (中): 喷射目标和生产喷射目标的方法
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Application No.: US15032176Application Date: 2015-04-16
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Publication No.: US20160260591A1Publication Date: 2016-09-08
- Inventor: Shoubin Zhang
- Applicant: MITSUBISHI MATERIALS CORPORATION
- Priority: JP2014-085233 20140417; JP2015-056107 20150319
- International Application: PCT/JP2015/061703 WO 20150416
- Main IPC: H01J37/34
- IPC: H01J37/34 ; B22F3/02 ; C23C4/067 ; C23C4/123 ; C23C14/14 ; C23C14/34
Abstract:
A sputtering target of the present invention is a sintered body containing: 0.5 at % to 10 at % of at least one metal element selected from Ni and Al; 0.01 ppm by weight to 10000 ppm by weight of B or P; and a balance including Si and inevitable impurities, in which the sintered body has a volume resistivity of 10 Ω·cm or lower, a theoretical density ratio of 85% to 99%, and a bending strength of 65 N/mm2 or higher.
Information query
