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公开(公告)号：US20190039131A1
公开(公告)日：2019-02-07
申请号：US16072602
申请日：2017-02-08
Applicant: MITSUBISHI MATERIALS CORPORATION
Inventor： Keita Umemoto , Shoubin Zhang , Ichiro Shiono , Kensuke Io
Abstract: Provided is a sputtering target having a composition comprising: 5 at % or more and 60 at % or less of Ga, and 0.01 at % or more and 5 at % or less of alkali metal, as metal components; and a Cu balance including inevitable impurities, wherein a concentration of the alkali metal on a surface on a sputtering surface side is less than 80% of a concentration of the alkali metal inside the target.
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公开(公告)号：US20150014156A1
公开(公告)日：2015-01-15
申请号：US14380610
申请日：2013-02-15
Applicant: MITSUBISHI MATERIALS CORPORATION
Inventor： Shoubin Zhang , Keita Umemoto , Masahiro Shoji
CPC classification number: H01J37/3429 , B22F3/10 , B22F2201/20 , B22F2301/00 , B22F2999/00 , C22C1/0425 , C22C32/0089 , C23C14/0623 , C23C14/08 , C23C14/087 , C23C14/3414 , C23C14/35 , B22F3/1007
Abstract: Provided is a sputtering target which contains Na in high concentration and, despite this, is inhibited from discoloration, generating spots, and causing abnormal electrical discharge and which has high strength and rarely breaks. Also provided is a method for producing the sputtering target. The sputtering target has a component composition that contains 10 to 40 at % of Ga and 1.0 to 15 at % of Na as metal element components other than F, S, and Se, with the remainder composed of Cu and unavoidable impurities, wherein the Na is contained in the form of at least one Na compound selected from sodium fluoride, sodium sulfide, and sodium selenide. The sputtering target has a theoretical density ratio of 90% or higher, a flexural strength of 100 N/mm2 or higher, and a bulk resistivity of 1 mΩ·cm or less. The number of 0.05 mm2 or larger aggregates of the at least one of sodium fluoride, sodium sulfide, and sodium selenide present per cm2 area of the target surface is 1 or less on average.
Abstract translation: 提供了含有高浓度的Na的溅射靶，尽管如此，它被抑制变色，产生斑点，引起异常放电，并且具有高强度并且很少破裂。 还提供了一种溅射靶的制造方法。 溅射靶具有含有10〜40at％的Ga和1.0〜15at％的作为F，S，Se以外的金属元素的Na的组成成分，余量由Cu和不可避免的杂质组成，其中Na 含有选自氟化钠，硫化钠和硒化钠中的至少一种Na化合物的形式。 溅射靶的理论密度比为90％以上，弯曲强度为100N / mm 2以上，体积电阻率为1mΩ，OHgr·cm以下。 目标表面的每平方厘米面积存在的氟化钠，硫化钠和硒化钠中的至少一种的0.05mm 2以上聚集体的数量平均为1以下。
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公开(公告)号：US10883169B2
公开(公告)日：2021-01-05
申请号：US15770407
申请日：2016-10-24
Applicant: MITSUBISHI MATERIALS CORPORATION , Solar Frontier K.K.
Inventor： Keita Umemoto , Shoubin Zhang , Yuya Mutsuda
Abstract: The present invention provides a sputtering target having a composition containing 45 at % to 90 at % of In, and the remainder including Cu and inevitable impurities. An In single phase and a Cu11In9 compound phase exist, and an XRD peak ratio I(In)/I(Cu11In9) between the In single phase and the Cu11In9 compound phase is in a range of 0.01 to 3. The average grain size of the Cu11In9 compound phase is 150 μm or less, the amount of oxygen is 500 mass ppm or less, and the theoretical density ratio is 85% or more.
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公开(公告)号：US09934949B2
公开(公告)日：2018-04-03
申请号：US14784375
申请日：2014-04-10
Applicant: MITSUBISHI MATERIALS CORPORATION
Inventor： Shoubin Zhang , Keita Umemoto , Masahiro Shoji
CPC classification number: H01J37/3426 , B22F3/10 , B22F2201/10 , B22F2201/20 , C22C9/00 , C22C28/00 , C23C14/0623 , C23C14/3414 , H01J2237/3321
Abstract: A sputtering target consists of a sintered body having a component composition consisting of: Ga of 10 to 40 at. % and Na of 0.1 to 15 at. % as metal elements; and the balance being Cu and inevitable impurities. The sintered body contains the Na in a form of Na compounds consisting of at least one compound selected from the group consisting of sodium sulfate, sodium sulfite, sodium selenate, and sodium selenite, the sintered body has a composition in which a Na compound phase is dispersed, and an average grain size of the Na compound phase is 10 μm or less.
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公开(公告)号：US20170298499A1
公开(公告)日：2017-10-19
申请号：US15511753
申请日：2015-09-17
Applicant: MITSUBISHI MATERIALS CORPORATION
Inventor： Keita Umemoto , Shoubin Zhang , Koutarou Urayama
CPC classification number: C23C14/3414 , B22F1/0003 , B22F3/1007 , B22F9/082 , B22F2201/01 , B22F2301/10 , B22F2998/10 , B22F2999/00 , C22C1/0425 , C22C1/0483 , C22C9/00 , C22C28/00 , C22C32/00 , C23C14/0623 , C23C14/14 , H01J37/3426 , B22F3/10 , B22F2201/04
Abstract: A sputtering target, which has a component composition including: 30.0-67.0 atomic % of Ga; and the Cu balance containing inevitable impurities, wherein the sputtering target is a sintered material having a structure in which θ phases made of Cu—Ga alloy are dispersed in a matrix of the γ phases made of Cu—Ga alloy, is provided.
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Patent Agency Ranking
公开(公告)号：US20170178876A1
公开(公告)日：2017-06-22
申请号：US15302010
申请日：2015-07-07
Applicant: MITSUBISHI MATERIALS CORPORATION
Inventor： Keita Umemoto , Shoubin Zhang
CPC classification number: H01J37/3426 , B22F1/0085 , B22F2998/10 , B22F2999/00 , C22C9/00 , C22C28/00 , C22F1/08 , C23C14/3414 , B22F3/1007 , B22F3/14 , B22F2201/01 , B22F2201/013 , B22F2201/016 , B22F2201/04 , B22F3/1017 , B22F2201/20
Abstract: A Cu—Ga alloy sputtering target includes, as a component composition, Ga: 0.1 to 40.0 at % and a balance including Cu and inevitable impurities, in which a porosity is 3.0% or lower, an average diameter of circumscribed circles of pores is 150 μm or less, and an average crystal grain size of Cu—Ga alloy particles is 50 μm or less.
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公开(公告)号：US09607812B2
公开(公告)日：2017-03-28
申请号：US14380610
申请日：2013-02-15
Applicant: MITSUBISHI MATERIALS CORPORATION
Inventor： Shoubin Zhang , Keita Umemoto , Masahiro Shoji
CPC classification number: H01J37/3429 , B22F3/10 , B22F2201/20 , B22F2301/00 , B22F2999/00 , C22C1/0425 , C22C32/0089 , C23C14/0623 , C23C14/08 , C23C14/087 , C23C14/3414 , C23C14/35 , B22F3/1007
Abstract: Provided is a sputtering target which contains Na in high concentration and, despite this, is inhibited from discoloration, generating spots, and causing abnormal electrical discharge and which has high strength and rarely breaks. Also provided is a method for producing the sputtering target. The sputtering target has a component composition that contains 10 to 40 at % of Ga and 1.0 to 15 at % of Na as metal element components other than F, S, and Se, with the remainder composed of Cu and unavoidable impurities, wherein the Na is contained in the form of at least one Na compound selected from sodium fluoride, sodium sulfide, and sodium selenide. The sputtering target has a theoretical density ratio of 90% or higher, a flexural strength of 100 N/mm2 or higher, and a bulk resistivity of 1 mΩ·cm or less. The number of 0.05 mm2 or larger aggregates of the at least one of sodium fluoride, sodium sulfide, and sodium selenide present per cm2 area of the target surface is 1 or less on average.
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公开(公告)号：US10283332B2
公开(公告)日：2019-05-07
申请号：US14435568
申请日：2013-10-16
Applicant: MITSUBISHI MATERIALS CORPORATION
Inventor： Keita Umemoto , Shoubin Zhang
IPC: H01J37/34 , C23C14/34 , C22C9/00 , C22C1/04 , B22F3/10 , B22F3/14 , B22F3/15 , B22F3/24 , C22C28/00
Abstract: A Cu—Ga binary alloy sputtering target having excellent mechanical workability, high density, and high bending strength, and a method of producing the sputtering target are provided. The sputtering target has a composition including 28 to 35 atomic % of Ga and the balance made of Cu and inevitable impurities. In addition, the sputtering target has a coexistence microstructure in which a low-Ga-containing Cu—Ga binary alloy phase is surrounded by a high-Ga-containing Cu—Ga binary alloy phase. The low-Ga-containing Cu—Ga binary alloy phase includes 26 atomic % or less of Ga and a balance made of Cu. The high-Ga-containing Cu—Ga binary alloy phase includes 28 atomic % or more of Ga.
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公开(公告)号：US20160260591A1
公开(公告)日：2016-09-08
申请号：US15032176
申请日：2015-04-16
Applicant: MITSUBISHI MATERIALS CORPORATION
Inventor： Shoubin Zhang
CPC classification number: H01J37/3429 , B22F3/02 , B22F2301/052 , B22F2301/15 , B22F2302/45 , C04B35/58085 , C04B35/62605 , C04B35/645 , C04B35/6455 , C04B2235/3217 , C04B2235/3279 , C04B2235/402 , C04B2235/405 , C04B2235/421 , C04B2235/5436 , C04B2235/6562 , C04B2235/72 , C04B2235/727 , C04B2235/77 , C04B2235/96 , C23C4/067 , C23C4/123 , C23C14/14 , C23C14/185 , C23C14/3414 , H01J37/3426 , H01J37/3491
Abstract: A sputtering target of the present invention is a sintered body containing: 0.5 at % to 10 at % of at least one metal element selected from Ni and Al; 0.01 ppm by weight to 10000 ppm by weight of B or P; and a balance including Si and inevitable impurities, in which the sintered body has a volume resistivity of 10 Ω·cm or lower, a theoretical density ratio of 85% to 99%, and a bending strength of 65 N/mm2 or higher.
Abstract translation: 本发明的溅射靶是含有0.5〜10at％的选自Ni和Al的至少一种金属元素的烧结体; B，P为0.01〜100ppm， 余量包括Si和不可避免的杂质，其中烧结体的体积电阻率为10Ω·cm以下，理论密度比为85％〜99％，弯曲强度为65N / mm 2以上。
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公开(公告)号：US20160118232A1
公开(公告)日：2016-04-28
申请号：US14769898
申请日：2014-02-25
Applicant: MITSUBISHI MATERIALS CORPORATION
Inventor： Shoubin Zhang , Keita Umemoto
CPC classification number: H01J37/3429 , B22D7/005 , B22F1/0003 , B22F3/10 , B22F9/04 , B22F2201/01 , B22F2201/10 , B22F2201/20 , B22F2301/10 , B22F2304/10 , C22C1/0433 , C22C1/0483 , C22C9/00 , C22C28/00 , C22C30/00 , C22C30/06 , C22F1/00 , C22F1/08 , C22F1/16 , C23C14/14 , C23C14/3414
Abstract: A sputtering target, which has excellent mechanical workability; and makes it possible to deposit a film of a compound including Cu and Ga as major components, is provided. The sputtering target includes: with respect to an all of metal elements in the sputtering target, 15.0 to 50.0 atomic % of Ga; 0.1 to 10.0 total atomic % of one or more metal elements selected from Al, Zn, Sn, Ag, and Mg; and the Cu balance and inevitable impurities.
Abstract translation: 具有优异的机械加工性的溅射靶; 并且使得可以沉积包含Cu和Ga的化合物的膜作为主要成分。 溅射靶包括：相对于溅射靶中的全部金属元素，为15.0〜50.0原子％的Ga; 选自Al，Zn，Sn，Ag和Mg中的一种或多种金属元素的总原子％为0.1〜10.0; 和Cu平衡以及不可避免的杂质。
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