发明申请
- 专利标题： Doping for FinFET
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申请号： US15153585申请日： 2016-05-12
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公开(公告)号： US20160260610A1公开(公告)日： 2016-09-08
- 发明人: Hung-Kai Chen , Tsung-Hung Lee , Han-Pin Chung , Shih-Syuan Huang , Chun-Fu Cheng , Chien-Tai Chan , Kuang-Yuan Hsu , Hsien-Chin Lin , Ka-Hing Fung
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 主分类号： H01L21/225
- IPC分类号： H01L21/225 ; H01L29/66
摘要：
First and second fins are formed extending from a substrate. A first layer is formed over the first fin. The first layer comprises a first dopant. A portion of the first layer is removed from a tip portion of the first fin. A second layer is formed over the second fin. The second layer comprises a second dopant. One of the first and second dopants is a p-type dopant, and the other of the first and second dopants is an n-type dopant. A portion of the second layer is removed from a tip portion of the second fin. A solid phase diffusion process is performed to diffuse the first dopant into a non-tip portion of the first fin, and to diffuse the second dopant into a non-tip portion of the second fin.
公开/授权文献
- US09659776B2 Doping for FinFET 公开/授权日：2017-05-23
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