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公开(公告)号：US20240113173A1
公开(公告)日：2024-04-04
申请号：US18519805
申请日：2023-11-27
发明人： Wei Ju Lee , Chun-Fu Cheng , Chung-Wei Wu , Zhiqiang Wu
IPC分类号： H01L29/08 , H01L21/02 , H01L29/423 , H01L29/45 , H01L29/786
CPC分类号： H01L29/0847 , H01L21/02532 , H01L21/02609 , H01L29/42392 , H01L29/456 , H01L29/78696
摘要： In one example aspect, the present disclosure is directed to a device. The device includes an active region on a semiconductor substrate. The active region extends along a first direction. The device also includes a gate structure on the active region. The gate structure extends along a second direction that is perpendicular to the first direction. Moreover, the gate structure engages with a channel on the active region. The device further includes a source/drain feature on the active region and connected to the channel. A projection of the source/drain feature onto the semiconductor substrate resembles a hexagon.
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公开(公告)号：US11723209B2
公开(公告)日：2023-08-08
申请号：US17159120
申请日：2021-01-26
发明人： Meng-Han Lin , Chun-Fu Cheng , Feng-Cheng Yang , Sheng-Chen Wang , Yu-Chien Chiu , Han-Jong Chia
摘要： A three-dimensional memory device and a manufacturing method thereof are provided. The three-dimensional memory device includes first and second stacking structures, isolation pillars, gate dielectric layers, channel layers and conductive pillars. The stacking structures are laterally spaced apart from each other. The stacking structures respectively comprises alternately stacked insulating layers and conductive layers. The isolation pillars laterally extend between the stacking structures. The isolation pillars further protrude into the stacking structures, and a space between the stacking structures is divided into cell regions. The gate dielectric layers are respectively formed in one of the cell regions, and cover opposing sidewalls of the stacking structures and sidewalls of the isolation pillars. The channel layers respectively cover an inner surface of one of the gate dielectric layers. The conductive pillars are separately located within the cell regions, and are laterally surrounded by the channel layers.
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公开(公告)号：US20220278198A1
公开(公告)日：2022-09-01
申请号：US17187458
申请日：2021-02-26
发明人： Wei Ju Lee , Chun-Fu Cheng , Chung-Wei Wu , Zhiqiang Wu
IPC分类号： H01L29/08 , H01L29/423 , H01L29/786 , H01L29/45 , H01L21/02
摘要： In one example aspect, the present disclosure is directed to a device. The device includes an active region on a semiconductor substrate. The active region extends along a first direction. The device also includes a gate structure on the active region. The gate structure extends along a second direction that is perpendicular to the first direction. Moreover, the gate structure engages with a channel on the active region. The device further includes a source/drain feature on the active region and connected to the channel. A projection of the source/drain feature onto the semiconductor substrate resembles a hexagon.
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公开(公告)号：US12034044B2
公开(公告)日：2024-07-09
申请号：US18102812
申请日：2023-01-30
发明人： Shin-Jiun Kuang , Meng-Yu Lin , Chun-Fu Cheng , Chung-Wei Wu
IPC分类号： H01L29/06 , H01L21/8234 , H01L29/66 , H01L29/78
CPC分类号： H01L29/0673 , H01L21/823431 , H01L29/0653 , H01L29/66553 , H01L29/6656 , H01L29/66795 , H01L29/7848 , H01L29/7851
摘要： Embodiments of the present disclosure relate to forming a nanosheet multi-channel device with an additional spacing layer and a hard mask layer. The additional spacing layer provides a space for an inner spacer above the topmost channel. The hard mask layer functions as an etch stop during metal gate etch back, providing improve gate height control.
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公开(公告)号：US20240014042A1
公开(公告)日：2024-01-11
申请号：US17861236
申请日：2022-07-10
发明人： Meng-Yu Lin , Chun-Fu Cheng , Cheng-Yin Wang , Yi-Bo Liao , Szuya Liao
IPC分类号： H01L21/28 , H01L27/092 , H01L29/06 , H01L29/423 , H01L29/786 , H01L29/775 , H01L21/3213 , H01L21/822 , H01L21/8238 , H01L29/66
CPC分类号： H01L21/28123 , H01L27/0922 , H01L29/0673 , H01L29/42392 , H01L29/78696 , H01L29/775 , H01L21/32134 , H01L21/32135 , H01L21/32139 , H01L21/8221 , H01L21/823828 , H01L21/823871 , H01L29/66742 , H01L29/66439
摘要： A semiconductor device includes a fin, first source/drain regions, second source/drain regions, a first nanosheet, a second nanosheet and a metal gate structure. The fin extends in a first direction and protrudes above an insulator. The first source/drain regions are over the fin. The second source/drain regions are over the first source/drain regions. The first nanosheet extends in the first direction between the first source/drain regions. The second nanosheet extends in the first direction between the second source/drain regions. The metal gate structure is over the fin and between the first source/drain regions. The metal gate structure extends in a second direction different from the first direction from a first sidewall to a second sidewall. A first distance in the second direction between the first nanosheet and the first sidewall is smaller than a second distance in the second direction between the first nanosheet and the second sidewall.
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公开(公告)号：US11855143B2
公开(公告)日：2023-12-26
申请号：US17187458
申请日：2021-02-26
发明人： Wei Ju Lee , Chun-Fu Cheng , Chung-Wei Wu , Zhiqiang Wu
IPC分类号： H01L29/08 , H01L29/423 , H01L21/02 , H01L29/45 , H01L29/786
CPC分类号： H01L29/0847 , H01L21/02532 , H01L21/02609 , H01L29/42392 , H01L29/456 , H01L29/78696
摘要： In one example aspect, the present disclosure is directed to a device. The device includes an active region on a semiconductor substrate. The active region extends along a first direction. The device also includes a gate structure on the active region. The gate structure extends along a second direction that is perpendicular to the first direction. Moreover, the gate structure engages with a channel on the active region. The device further includes a source/drain feature on the active region and connected to the channel. A projection of the source/drain feature onto the semiconductor substrate resembles a hexagon.
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公开(公告)号：US20160260610A1
公开(公告)日：2016-09-08
申请号：US15153585
申请日：2016-05-12
发明人： Hung-Kai Chen , Tsung-Hung Lee , Han-Pin Chung , Shih-Syuan Huang , Chun-Fu Cheng , Chien-Tai Chan , Kuang-Yuan Hsu , Hsien-Chin Lin , Ka-Hing Fung
IPC分类号： H01L21/225 , H01L29/66
CPC分类号： H01L21/2251 , H01L21/2255 , H01L21/823821 , H01L21/845 , H01L29/0657 , H01L29/6656 , H01L29/66795 , H01L29/66803 , H01L29/7851
摘要： First and second fins are formed extending from a substrate. A first layer is formed over the first fin. The first layer comprises a first dopant. A portion of the first layer is removed from a tip portion of the first fin. A second layer is formed over the second fin. The second layer comprises a second dopant. One of the first and second dopants is a p-type dopant, and the other of the first and second dopants is an n-type dopant. A portion of the second layer is removed from a tip portion of the second fin. A solid phase diffusion process is performed to diffuse the first dopant into a non-tip portion of the first fin, and to diffuse the second dopant into a non-tip portion of the second fin.
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公开(公告)号：US20150243739A1
公开(公告)日：2015-08-27
申请号：US14186910
申请日：2014-02-21
发明人： Hung-Kai Chen , Tsung-Hung Lee , Han-Pin Chung , Shih-Syuan Huang , Chun-Fu Cheng , Chien-Tai Chan , Kuang-Yuan Hsu , Hsien-Chin Lin , Ka-Hing Fung
IPC分类号： H01L29/36 , H01L29/06 , H01L21/225 , H01L29/78
CPC分类号： H01L21/2251 , H01L21/2255 , H01L21/823821 , H01L21/845 , H01L29/0657 , H01L29/6656 , H01L29/66795 , H01L29/66803 , H01L29/7851
摘要： First and second fins are formed extending from a substrate. A first layer is formed over the first fin. The first layer comprises a first dopant. A portion of the first layer is removed from a tip portion of the first fin. A second layer is formed over the second fin. The second layer comprises a second dopant. One of the first and second dopants is a p-type dopant, and the other of the first and second dopants is an n-type dopant. A portion of the second layer is removed from a tip portion of the second fin. A solid phase diffusion process is performed to diffuse the first dopant into a non-tip portion of the first fin, and to diffuse the second dopant into a non-tip portion of the second fin.
摘要翻译： 从基板形成第一和第二散热片。 第一层形成在第一鳍上。 第一层包括第一掺杂剂。 第一层的一部分从第一鳍片的尖端部分去除。 第二层形成在第二鳍上。 第二层包括第二掺杂剂。 第一和第二掺杂剂之一是p型掺杂剂，第一和第二掺杂剂中的另一种是n型掺杂剂。 第二层的一部分从第二鳍的尖端部分移除。 执行固相扩散处理以将第一掺杂剂扩散到第一鳍片的非尖端部分中，并将第二掺杂剂扩散到第二鳍片的非尖端部分。
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9.发明授权公开(公告)号：US11476342B1
公开(公告)日：2022-10-18
申请号：US17308617
申请日：2021-05-05
发明人： Wei Ju Lee , Chun-Fu Cheng , Chung-Wei Wu , Zhiqiang Wu
IPC分类号： H01L29/417 , H01L27/092 , H01L29/08 , H01L21/8238 , H01L21/285 , H01L29/45
摘要： Semiconductor device includes substrate having fins, first S/D feature comprising first epitaxial layer contacting first fin, second epitaxial layer on first epitaxial layer, third epitaxial layer on second epitaxial layer, third epitaxial layer comprising center and edge portion higher than center portion, and fourth epitaxial layer on third epitaxial layer, second S/D feature adjacent first S/D feature and comprising first epitaxial layer contacting second fin, second epitaxial layer on first epitaxial layer of second S/D feature, third epitaxial layer on second epitaxial layer of second S/D feature, third epitaxial layer comprising center and edge portion higher than center portion of third epitaxial layer, center and edge portions of third epitaxial layer of first and second S/D features are merging, and fourth epitaxial layer on third epitaxial layer of second S/D feature, S/D contact covering edge and center portions of third epitaxial layers of first and second S/D features.
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公开(公告)号：US09362404B2
公开(公告)日：2016-06-07
申请号：US14186910
申请日：2014-02-21
发明人： Hung-Kai Chen , Tsung-Hung Lee , Han-Pin Chung , Shih-Syuan Huang , Chun-Fu Cheng , Chien-Tai Chan , Kuang-Yuan Hsu , Hsien-Chin Lin , Ka-Hing Fung
IPC分类号： H01L29/00 , H01L29/78 , H01L29/06 , H01L21/225
CPC分类号： H01L21/2251 , H01L21/2255 , H01L21/823821 , H01L21/845 , H01L29/0657 , H01L29/6656 , H01L29/66795 , H01L29/66803 , H01L29/7851
摘要： First and second fins are formed extending from a substrate. A first layer is formed over the first fin. The first layer comprises a first dopant. A portion of the first layer is removed from a tip portion of the first fin. A second layer is formed over the second fin. The second layer comprises a second dopant. One of the first and second dopants is a p-type dopant, and the other of the first and second dopants is an n-type dopant. A portion of the second layer is removed from a tip portion of the second fin. A solid phase diffusion process is performed to diffuse the first dopant into a non-tip portion of the first fin, and to diffuse the second dopant into a non-tip portion of the second fin.
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