发明申请
- 专利标题: Semiconductor Devices Including Insulating Gates and Methods for Fabricating the Same
- 专利标题(中): 包括绝缘门的半导体器件及其制造方法
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申请号: US15000495申请日: 2016-01-19
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公开(公告)号: US20160268414A1公开(公告)日: 2016-09-15
- 发明人: Sang-Jine PARK , Keun-Hee BAI , Kyoung-Hwan YEO , Bo-Un YOON , Kee-Sang KWON , Do-Hyoung KIM , Ha-Young JEON , Seung-Seok HA
- 申请人: Sang-Jine PARK , Keun-Hee BAI , Kyoung-Hwan YEO , Bo-Un YOON , Kee-Sang KWON , Do-Hyoung KIM , Ha-Young JEON , Seung-Seok HA
- 优先权: KR10-2015-0025303 20150223
- 主分类号: H01L29/78
- IPC分类号: H01L29/78 ; H01L29/423 ; H01L29/06 ; H01L29/49
摘要:
Semiconductor devices are provided including a first active fin extending in a first direction and a second active fin spaced apart from the first active fin in a second direction perpendicular to the first direction, the second active fin extending in the first direction, the second active fin having a longer side shorter than a length of a longer side of the first active fin. A first dummy gate extends in the second direction overlapping a first end of each of the first and second active fins. A first metal gate extends in the second direction intersecting the first active fin and overlapping a second end of the second active fin. A first insulating gate extends in the second direction intersecting the first active fin. The first insulating gate extends into the first active fin.