- 专利标题： ELECTRICAL CONTACTS TO NANOSTRUCTURED AREAS
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申请号： US14468219申请日： 2014-08-25
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公开(公告)号： US20160268452A9公开(公告)日： 2016-09-15
- 发明人: Marcie R. Black , Joanne Forziati , Michael Jura , Jeff Miller , Brian Murphy , Adam Standley
- 申请人： Advanced Silicon Group, Inc.
- 申请人地址： US NH Salem
- 专利权人： Bandgap Engineering, Inc.
- 当前专利权人： Bandgap Engineering, Inc.
- 当前专利权人地址： US NH Salem
- 主分类号： H01L31/0236
- IPC分类号： H01L31/0236 ; H01L31/0216 ; H01L31/0352 ; H01L31/18
摘要：
A process is provided for contacting a nanostructured surface. In that process, a substrate is provided having a nanostructured material on a surface, the substrate being conductive and the nanostructured material being coated with an insulating material. A portion of the nanostructured material is at least partially removed. A conductor is deposited on the substrate in such a way that it is in electrical contact with the substrate through the area where the nanostructured material has been at least partially removed.
公开/授权文献
- US09601640B2 Electrical contacts to nanostructured areas 公开/授权日：2017-03-21
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