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公开(公告)号：US09783895B2
公开(公告)日：2017-10-10
申请号：US15206938
申请日：2016-07-11
发明人： Joanne Yim , Jeffrey B. Miller , Michael Jura , Marcie R. Black , Joanne Forziati , Brian P. Murphy , Adam Standley
IPC分类号： C23F1/30 , H01L21/308 , H01L21/306 , H01L21/48 , H01L21/02 , H01L29/06 , H01L29/41 , C30B29/06 , C30B29/60 , H01M4/38 , H01M10/0525 , H01L35/10 , H01M4/04 , H01M4/134 , H01M4/02
CPC分类号： C23F1/30 , C30B29/06 , C30B29/60 , H01L21/02603 , H01L21/30604 , H01L21/308 , H01L21/3081 , H01L21/3086 , H01L21/3088 , H01L21/4885 , H01L29/0669 , H01L29/0676 , H01L29/413 , H01L35/10 , H01L2924/0002 , H01M4/0426 , H01M4/134 , H01M4/386 , H01M10/0525 , H01M2004/027
摘要： In an aspect of this disclosure, a method is provided comprising the steps of: (a) providing a silicon-containing substrate, (b) depositing a first metal on the substrate, (c) etching the substrate produced by step (b) using a first etch, and (d) etching the substrate produced by step (c) using a second etch, wherein the second etch is more aggressive towards the deposited metal than the first etch, wherein the result of step (d) comprises silicon nanowires. The method may further comprise, for example, steps (b1) subjecting the first metal to a treatment which causes it to agglomerate and (b2) depositing a second metal.
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公开(公告)号：US09449855B2
公开(公告)日：2016-09-20
申请号：US14329975
申请日：2014-07-13
发明人： Joanne Yim , Jeffrey B. Miller , Michael Jura , Marcie R. Black , Joanne Forziati , Brian P. Murphy , Adam Standley
IPC分类号： H01L21/48 , H01L21/308 , H01L21/02 , H01L29/06 , H01L29/41 , H01L21/306 , C30B29/06 , C30B29/60 , H01M4/38 , H01M10/0525
CPC分类号： C23F1/30 , C30B29/06 , C30B29/60 , H01L21/02603 , H01L21/30604 , H01L21/308 , H01L21/3081 , H01L21/3086 , H01L21/3088 , H01L21/4885 , H01L29/0669 , H01L29/0676 , H01L29/413 , H01L35/10 , H01L2924/0002 , H01M4/0426 , H01M4/134 , H01M4/386 , H01M10/0525 , H01M2004/027
摘要： In an aspect of this disclosure, a method is provided comprising the steps of: (a) providing a silicon-containing substrate, (b) depositing a first metal on the substrate, (c) etching the substrate produced by step (b) using a first etch, and (d) etching the substrate produced by step (c) using a second etch, wherein the second etch is more aggressive towards the deposited metal than the first etch, wherein the result of step (d) comprises silicon nanowires. The method may further comprise, for example, steps (b1) subjecting the first metal to a treatment which causes it to agglomerate and (b2) depositing a second metal.
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公开(公告)号：US09911878B2
公开(公告)日：2018-03-06
申请号：US14917698
申请日：2014-08-27
发明人： Joanne Yim , Jeff Miller , Michael Jura , Marcie R. Black , Joanne Forziati , Brian Murphy , Lauren Magliozzi
IPC分类号： H01L31/0236 , H01L31/18 , B82Y40/00 , H01L21/306
CPC分类号： H01L31/02366 , B82Y40/00 , H01L21/30604 , H01L31/0236 , H01L31/1804 , Y02E10/50
摘要： In an aspect of the disclosure, a process for forming nanostructuring on a silicon-containing substrate is provided. The process comprises (a) performing metal-assisted chemical etching on the substrate, (b) performing a clean, including partial or total removal of the metal used to assist the chemical etch, and (c) performing an isotropic or substantially isotropic chemical etch subsequently to the metal-assisted chemical etch of step (a). In an alternative aspect of the disclosure, the process comprises (a) performing metal-assisted chemical etching on the substrate, (b) cleaning the substrate, including removal of some or all of the assisting metal, and (c) performing a chemical etch which results in regularized openings in the silicon substrate.
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公开(公告)号：US20160268452A9
公开(公告)日：2016-09-15
申请号：US14468219
申请日：2014-08-25
发明人： Marcie R. Black , Joanne Forziati , Michael Jura , Jeff Miller , Brian Murphy , Adam Standley
IPC分类号： H01L31/0236 , H01L31/0216 , H01L31/0352 , H01L31/18
CPC分类号： H01L31/02366 , H01L21/283 , H01L21/28506 , H01L29/0676 , H01L29/413 , H01L31/02167 , H01L31/02168 , H01L31/0224 , H01L31/022425 , H01L31/02363 , H01L31/035218 , H01L31/035227 , H01L31/068 , H01L31/18 , Y02E10/50 , Y02E10/547
摘要： A process is provided for contacting a nanostructured surface. In that process, a substrate is provided having a nanostructured material on a surface, the substrate being conductive and the nanostructured material being coated with an insulating material. A portion of the nanostructured material is at least partially removed. A conductor is deposited on the substrate in such a way that it is in electrical contact with the substrate through the area where the nanostructured material has been at least partially removed.
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公开(公告)号：US20200220033A1
公开(公告)日：2020-07-09
申请号：US16818091
申请日：2020-03-13
发明人： Joanne Yim , Jeffrey B. Miller , Michael Jura , Marcie R. Black , Joanne Forziati , Brian P. Murphy , Lauren Magliozzi
IPC分类号： H01L31/0236 , H01L31/18
摘要： A silicon-containing substrate including a top surface which comprises nanostructuring having a plurality of rounded depressions with depths greater than 20 nm.
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公开(公告)号：US20170278988A1
公开(公告)日：2017-09-28
申请号：US15622422
申请日：2017-06-14
发明人： Michael Jura , Marcie R. Black , Jeffrey B. Miller , Joanne Yim , Joanne Forziati , Brian P. Murphy , Richard Chleboski
IPC分类号： H01L31/0236 , B82Y30/00 , H01L31/0216 , H01L31/0224 , H01L31/0312 , H01L31/0352 , H01L31/0368 , H01L31/0376 , H01L31/18 , H01L29/06
CPC分类号： H01L31/02363 , B82Y30/00 , H01L29/0673 , H01L31/02167 , H01L31/022425 , H01L31/022433 , H01L31/0312 , H01L31/035227 , H01L31/03682 , H01L31/03762 , H01L31/1868 , Y02E10/50
摘要： A process is provided for contacting a nanostructured surface. The process may include (a) providing a substrate having a nanostructured material on a surface, (b) passivating the surface on which the nanostructured material is located, (c) screen printing onto the nanostructured surface and (d) firing the screen printing ink at a high temperature. In some embodiments, the nanostructured material compromises silicon. In some embodiments, the nanostructured material includes silicon nanowires. In some embodiments, the nanowires are around 150 nm, 250 nm, or 400 nm in length. In some embodiments, the nanowires have a diameter range between about 30 nm and about 200 nm. In some embodiments, the nanowires are tapered such that the base is larger than the tip. In some embodiments, the nanowires are tapered at an angle of about 1 degree, about 3 degrees, or about 10 degrees. In some embodiments, a high temperature can be approximately 700 C, 750 C, 800 C, or 850 C.
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公开(公告)号：US20190221683A1
公开(公告)日：2019-07-18
申请号：US16359630
申请日：2019-03-20
发明人： Michael Jura , Marcie R. Black , Jeffrey B. Miller , Joanne Yim , Joanne Forziati , Brian P. Murphy , Richard Chleboski
IPC分类号： H01L31/0236 , H01L31/18 , H01L31/0376 , H01L31/0368 , H01L31/0312 , H01L31/0224 , B82Y30/00 , H01L31/0352 , H01L31/0216
CPC分类号： H01L31/02363 , B82Y30/00 , H01L29/0673 , H01L31/02167 , H01L31/022425 , H01L31/022433 , H01L31/0312 , H01L31/035227 , H01L31/03682 , H01L31/03762 , H01L31/1868 , Y02E10/50
摘要： A process is provided for contacting a nanostructured surface. The process may include (a) providing a substrate having a nanostructured material on a surface, (b) passivating the surface on which the nanostructured material is located, (c) screen printing onto the nanostructured surface and (d) firing the screen printing ink at a high temperature. In some embodiments, the nanostructured material compromises silicon. In some embodiments, the nanostructured material includes silicon nanowires. In some embodiments, the nanowires are around 150 nm, 250 nm, or 400 nm in length. In some embodiments, the nanowires have a diameter range between about 30 nm and about 200 nm. In some embodiments, the nanowires are tapered such that the base is larger than the tip. In some embodiments, the nanowires are tapered at an angle of about 1 degree, about 3 degrees, or about 10 degrees. In some embodiments, a high temperature can be approximately 700 C, 750 C, 800 C, or 850 C.
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公开(公告)号：US10269995B2
公开(公告)日：2019-04-23
申请号：US15622422
申请日：2017-06-14
发明人： Michael Jura , Marcie R. Black , Jeffrey B. Miller , Joanne Yim , Joanne Forziati , Brian P. Murphy , Richard Chleboski
IPC分类号： H01L31/044 , H01L31/0236 , B82Y30/00 , H01L31/0224 , H01L31/0352 , H01L31/0216 , H01L31/0312 , H01L31/0368 , H01L31/0376 , H01L31/18 , H01L29/06
摘要： A process is provided for contacting a nanostructured surface. The process may include (a) providing a substrate having a nanostructured material on a surface, (b) passivating the surface on which the nanostructured material is located, (c) screen printing onto the nanostructured surface and (d) firing the screen printing ink at a high temperature. In some embodiments, the nanostructured material compromises silicon. In some embodiments, the nanostructured material includes silicon nanowires. In some embodiments, the nanowires are around 150 nm, 250 nm, or 400 nm in length. In some embodiments, the nanowires have a diameter range between about 30 nm and about 200 nm. In some embodiments, the nanowires are tapered such that the base is larger than the tip. In some embodiments, the nanowires are tapered at an angle of about 1 degree, about 3 degrees, or about 10 degrees. In some embodiments, a high temperature can be approximately 700 C, 750 C, 800 C, or 850 C.
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公开(公告)号：US20180108791A1
公开(公告)日：2018-04-19
申请号：US15837322
申请日：2017-12-11
发明人： Joanne Yim , Jeffrey B. Miller , Michael Jura , Marcie R. Black , Joanne Forziati , Brian P. Murphy , Lauren Magliozzi
IPC分类号： H01L31/0236 , H01L31/18 , B82Y40/00 , H01L21/306
CPC分类号： H01L31/02366 , B82Y40/00 , H01L21/30604 , H01L31/0236 , H01L31/1804 , Y02E10/50
摘要： In an aspect of the disclosure, a process for forming nanostructuring on a silicon-containing substrate is provided. The process comprises (a) performing metal-assisted chemical etching on the substrate, (b) performing a clean, including partial or total removal of the metal used to assist the chemical etch, and (c) performing an isotropic or substantially isotropic chemical etch subsequently to the metal-assisted chemical etch of step (a). In an alternative aspect of the disclosure, the process comprises (a) performing metal-assisted chemical etching on the substrate, (b) cleaning the substrate, including removal of some or all of the assisting metal, and (c) performing a chemical etch which results in regularized openings in the silicon substrate.
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公开(公告)号：US09768331B2
公开(公告)日：2017-09-19
申请号：US14338752
申请日：2014-07-23
发明人： Michael Jura , Marcie R. Black , Jeffrey B. Miller , Joanne Yim , Joanne Forziati , Brian P. Murphy , Richard Chleboski
IPC分类号： H01L31/044 , H01L31/0236 , B82Y30/00 , H01L31/0224 , H01L31/0352 , H01L31/0216 , H01L31/0312 , H01L31/0368 , H01L31/0376 , H01L31/18 , H01L29/06
CPC分类号： H01L31/02363 , B82Y30/00 , H01L29/0673 , H01L31/02167 , H01L31/022425 , H01L31/022433 , H01L31/0312 , H01L31/035227 , H01L31/03682 , H01L31/03762 , H01L31/1868 , Y02E10/50
摘要： A process is provided for contacting a nanostructured surface. The process may include (a) providing a substrate having a nanostructured material on a surface, (b) passivating the surface on which the nanostructured material is located, (c) screen printing onto the nanostructured surface and (d) firing the screen printing ink at a high temperature. In some embodiments, the nanostructured material compromises silicon. In some embodiments, the nanostructured material includes silicon nanowires. In some embodiments, the nanowires are around 150 nm, 250 nm, or 400 nm in length. In some embodiments, the nanowires have a diameter range between about 30 nm and about 200 nm. In some embodiments, the nanowires are tapered such that the base is larger than the tip. In some embodiments, the nanowires are tapered at an angle of about 1 degree, about 3 degrees, or about 10 degrees. In some embodiments, a high temperature can be approximately 700 C, 750 C, 800 C, or 850 C.
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