发明申请
US20160268483A1 QUANTUM DOTS WITH MULTIPLE INSULATOR COATINGS 有权
量子点与多个绝缘涂层

QUANTUM DOTS WITH MULTIPLE INSULATOR COATINGS
摘要:
Fabricating a semiconductor structure including forming a nanocrystalline core from a first semiconductor material, forming a nanocrystalline shell from a second, different, semiconductor material that at least partially surrounds the nanocrystalline core, wherein the nanocrystalline core and the nanocrystalline shell form a quantum dot. Fabrication further involves forming an insulator layer encapsulating the quantum dot to create a coated quantum dot, and forming an additional insulator layer on the coated quantum dot using an Atomic Layer Deposition (ALD) process.
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