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    GROUP I-III-VI MATERIAL NANO-CRYSTALLINE CORE AND GROUP I-III-VI MATERIAL NANO-CRYSTALLINE SHELL PAIRING
    7.
    发明申请
    GROUP I-III-VI MATERIAL NANO-CRYSTALLINE CORE AND GROUP I-III-VI MATERIAL NANO-CRYSTALLINE SHELL PAIRING 审中-公开
    I-III-VI族材料纳米晶核和I-III-VI族材料纳米晶体配对

    公开(公告)号：US20140264257A1

    公开(公告)日：2014-09-18

    申请号：US13796082

    申请日：2013-03-12

    申请人： Steven M. Hughes ,  Juanita N. Kurtin

    发明人： Steven M. Hughes ,  Juanita N. Kurtin

    IPC分类号： H01L33/06

    CPC分类号： H01L33/005 ,  C09K11/02 ,  C09K11/025 ,  C09K11/565 ,  C09K11/582 ,  C09K11/621 ,  C09K11/881 ,  H01L33/06 ,  H01L33/26 ,  H01L33/502

    摘要： Nano-crystalline core and nano-crystalline shell pairings having group I-III-VI material nano-crystalline cores, and methods of fabricating nano-crystalline core and nano-crystalline shell pairings having group I-III-VI material nano-crystalline cores, are described. In an example, a semiconductor structure includes a nano-crystalline core composed of a group I-III-VI semiconductor material. A nano-crystalline shell composed of a second, different, group I-III-VI semiconductor material at least partially surrounds the nano-crystalline core.

    摘要翻译： 具有I-III-VI族材料纳米晶核的纳晶结晶核和纳米晶体壳对，以及制备具有I-III-VI族材料纳米晶核的纳米晶核和纳米晶体壳对的方法， 被描述。 在一个实例中，半导体结构包括由I-III-VI族半导体材料构成的纳米晶核。 由第二不同的I-III-VI族半导体材料组成的纳米晶体壳至少部分地包围纳米晶核。

    SEMICONDUCTOR STRUCTURE HAVING NANOCRYSTALLINE CORE AND NANOCRYSTALLINE SHELL PAIRING WITH COMPOSITIONAL TRANSITION LAYER
    8.
    发明申请
    SEMICONDUCTOR STRUCTURE HAVING NANOCRYSTALLINE CORE AND NANOCRYSTALLINE SHELL PAIRING WITH COMPOSITIONAL TRANSITION LAYER 审中-公开
    具有纳米晶核和纳米晶体结构的具有组成过渡层的半导体结构

    公开(公告)号：US20140117311A1

    公开(公告)日：2014-05-01

    申请号：US13663300

    申请日：2012-10-29

    申请人： Juanita N. Kurtin

    发明人： Juanita N. Kurtin

    IPC分类号： H01L29/15 ,  H01L29/12

    CPC分类号： C09K11/883 ,  B82Y10/00 ,  B82Y20/00 ,  C09K11/025 ,  H01L29/0665 ,  H01L29/127 ,  H01L29/221 ,  H01L33/06 ,  H01L33/502

    摘要： Semiconductor structures having a nanocrystalline core and nanocrystalline shell pairing compositional transition layers are described. In an example, a semiconductor structure includes a nanocrystalline core composed of a first semiconductor material. A nanocrystalline shell composed of a second semiconductor material surrounds the nanocrystalline core. A compositional transition layer is disposed between, and in contact with, the nanocrystalline core and nanocrystalline shell and has a composition intermediate to the first and second semiconductor materials. In another example, a semiconductor structure includes a nanocrystalline core composed of a first semiconductor material. A nanocrystalline shell composed of a second semiconductor material surrounds the nanocrystalline core. A nanocrystalline outer shell surrounds the nanocrystalline shell and is composed of a third semiconductor material. A compositional transition layer is disposed between, and in contact with, the nanocrystalline shell and the nanocrystalline outer shell and has a composition intermediate to the second and third semiconductor materials.

    摘要翻译： 描述了具有纳米晶核和纳米晶体壳配对组成过渡层的半导体结构。 在一个示例中，半导体结构包括由第一半导体材料构成的纳米晶核。 由第二半导体材料构成的纳米晶体壳围绕纳米晶核。 组成过渡层设置在纳米晶核和纳米晶体壳之间并与之接触，并且具有中间到第一和第二半导体材料的组成。 在另一示例中，半导体结构包括由第一半导体材料构成的纳米晶核。 由第二半导体材料构成的纳米晶体壳围绕纳米晶核。 纳米晶体外壳围绕纳米晶体壳并由第三半导体材料组成。 组成过渡层设置在纳米晶体壳和纳米晶体外壳之间并与之接触，并且具有中间到第二和第三半导体材料的组成。

    LIGHTING DEVICE HAVING HIGHLY LUMINESCENT QUANTUM DOTS
    9.
    发明申请
    LIGHTING DEVICE HAVING HIGHLY LUMINESCENT QUANTUM DOTS 有权
    具有高亮度量子点的照明装置

    公开(公告)号：US20140049155A1

    公开(公告)日：2014-02-20

    申请号：US13589823

    申请日：2012-08-20

    申请人： Juanita N. Kurtin

    发明人： Juanita N. Kurtin

    IPC分类号： H05B33/02 ,  B82Y99/00

    CPC分类号： H01L33/502 ,  B82Y40/00 ,  C09K11/025 ,  C09K11/08 ,  H01L33/501 ,  H01L33/504 ,  H01L33/507

    摘要： Lighting devices having highly luminescent quantum dots are described. In an example, a lighting apparatus includes a housing structure or a substrate. The lighting apparatus also includes a light emitting diode supported within the housing structure or disposed on the substrate, respectively. The lighting apparatus also includes a light conversion layer disposed above the light emitting diode. The light conversion layer includes a plurality of quantum dots. Each quantum dot includes an anisotropic nanocrystalline core having a first semiconductor material and having an aspect ratio between, but not including, 1.0 and 2.0. Each quantum dot also includes a nanocrystalline shell having a second, different, semiconductor material at least partially surrounding the anisotropic nanocrystalline core.

    摘要翻译： 描述具有高发光量子点的照明装置。 在一个示例中，照明设备包括外壳结构或基板。 照明装置还包括支撑在壳体结构内或分别设置在基板上的发光二极管。 照明装置还包括设置在发光二极管上方的光转换层。 光转换层包括多个量子点。 每个量子点包括具有第一半导体材料并具有但不包括1.0和2.0之间的纵横比的各向异性纳米晶核。 每个量子点还包括具有至少部分地围绕各向异性纳米晶核的第二不同的半导体材料的纳米晶体壳。