Invention Application
US20160284913A1 SOLAR CELL EMITTER REGION FABRICATION USING SUBSTRATE-LEVEL ION IMPLANTATION
审中-公开
太阳能电池区域制造使用基板级离子植入
- Patent Title: SOLAR CELL EMITTER REGION FABRICATION USING SUBSTRATE-LEVEL ION IMPLANTATION
- Patent Title (中): 太阳能电池区域制造使用基板级离子植入
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Application No.: US14672071Application Date: 2015-03-27
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Publication No.: US20160284913A1Publication Date: 2016-09-29
- Inventor: Staffan Westerberg , Timothy Weidman , David D. Smith
- Applicant: Staffan Westerberg , Timothy Weidman , David D. Smith
- Main IPC: H01L31/065
- IPC: H01L31/065 ; H01L31/18 ; H01L31/0224

Abstract:
Methods of fabricating solar cell emitter regions using substrate-level ion implantation, and resulting solar cells, are described. In an example, a method of fabricating a solar cell involves forming a lightly doped region in a semiconductor substrate by ion implantation, the lightly doped region of a first conductivity type of a first concentration. The method also involves forming a first plurality of dopant regions of the first conductivity type of a second, higher, concentration by ion implantation, the first plurality of dopant regions overlapping with a first portion of the lightly doped region. The method also involves forming a second plurality of dopant regions by ion implantation, the second plurality of dopant regions having a second conductivity type of a concentration higher than the first concentration, and the second plurality of dopant regions overlapping with a second portion of the lightly doped region and alternating with but not overlapping the first plurality of dopant regions.
Information query
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