发明申请
US20160293263A1 NONVOLATLE MEMORY DEVICE AND MEMORY SYSTEM HAVING THE SAME, AND RELATED MEMORY MANAGEMENT, ERASE AND PROGRAMMING METHODS
审中-公开
不具有存储器的存储器件和存储器系统以及相关的存储器管理，擦除和编程方法
- 专利标题： NONVOLATLE MEMORY DEVICE AND MEMORY SYSTEM HAVING THE SAME, AND RELATED MEMORY MANAGEMENT, ERASE AND PROGRAMMING METHODS
- 专利标题（中）： 不具有存储器的存储器件和存储器系统以及相关的存储器管理，擦除和编程方法
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申请号： US15178135申请日： 2016-06-09
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公开(公告)号： US20160293263A1公开(公告)日： 2016-10-06
- 发明人: EUN CHU OH , JONGHA KIM , JUNJIN KONG
- 申请人： SAMSUNG ELECTRONICS CO., LTD.
- 优先权： KR10-2012-0075596 20120711
- 主分类号： G11C16/16
- IPC分类号： G11C16/16 ; G06F12/02 ; G11C11/56 ; G11C16/04 ; G11C16/34
摘要：
An erase method of a nonvolatile memory device includes setting an erase mode, and performing one of a normal erase operation and a quick erase operation according to the set erase mode. The normal erase operation is performed to set a threshold voltage of a memory cell to an erase state which is lower than a first erase verification level. The quick erase operation is performed to set a threshold voltage of a memory cell to a pseudo erase state which is lower than a second erase verification level. The second erase verification level is higher than the first erase verification level.
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