- 专利标题： METHOD FOR MAKING STRAINED SEMICONDUCTOR DEVICE AND RELATED METHODS
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申请号： US15180158申请日： 2016-06-13
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公开(公告)号： US20160293494A1公开(公告)日： 2016-10-06
- 发明人: Xiuyu Cai , Qing Liu , Ruilong Xie , Chun-Chen Yeh
- 申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , GLOBALFOUNDRIES INC. , STMICROELECTRONICS, INC.
- 主分类号： H01L21/8238
- IPC分类号： H01L21/8238 ; H01L21/768 ; H01L21/84
摘要：
A method for making a semiconductor device is provided. Raised source and drain regions are formed with a tensile strain-inducing material, after thermal treatment to form source drain extension regions, to thereby preserve the strain-inducing material in desired substitutional states.
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