Invention Application
US20160299423A1 IMPRINT LITHOGRAPHY METHOD, METHOD FOR MANUFACTURING MASTER TEMPLATE USING THE METHOD AND MASTER TEMPLATE MANUFACTURED BY THE METHOD
审中-公开
IMPRINT LITHOGRAPHY方法，使用该方法制造的方法和主模板制造主模板的方法
- Patent Title: IMPRINT LITHOGRAPHY METHOD, METHOD FOR MANUFACTURING MASTER TEMPLATE USING THE METHOD AND MASTER TEMPLATE MANUFACTURED BY THE METHOD
- Patent Title (中): IMPRINT LITHOGRAPHY方法，使用该方法制造的方法和主模板制造主模板的方法
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Application No.: US14886673Application Date: 2015-10-19
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Publication No.: US20160299423A1Publication Date: 2016-10-13
- Inventor: Yun-Jong YEO , Jung-Ha SON , Joo-Hyung LEE , Dae-Young LEE
- Applicant: Samsung Display Co., Ltd.
- Priority: KR10-2015-0050974 20150410
- Main IPC: G03F7/00
- IPC: G03F7/00
Abstract:
An imprint lithography method includes disposing a mask layer on a base substrate in first and in second areas, reducing a thickness of the mask layer in the first area, disposing a first planarization layer on the mask layer in the first and second areas, forming a first imprint pattern on the first planarization layer, forming a first planarization layer pattern by etching the first planarization layer using the first imprint pattern, forming a first mask pattern in the first area by etching the mask layer using the first planarization layer pattern, diposing a second planarization layer on the first mask pattern and the mask layer in the first and second areas, forming a second imprint pattern on the second planarization layer, forming a second planarization layer pattern by etching the planarization layer using the second imprint pattern, and forming a second mask pattern in the second area.
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