Abstract:
A method of manufacturing a polarizer includes forming a first layer on a base substrate, forming a first partition wall layer on the first layer, forming a second partition wall layer on the first partition wall, forming a plurality of first partition wall patterns and a plurality of second partition walls disposed on the first partition wall patterns by etching the first partition wall and the second partition wall at the same time, forming a block copolymer layer on the first layer on which the plurality of first partition wall patterns are formed, forming a plurality of fine patterns from the block copolymer layer, and patterning the first layer using the fine patterns and the second partition wall patterns as a mask.
Abstract:
A display panel includes a first substrate comprising a plurality of pixel areas, a second substrate facing the first substrate, a liquid crystal layer interposed between the first substrate and the second substrate, a thin film transistor comprising a gate electrode disposed on the first substrate, a semiconductor pattern overlapping with the gate electrode, a source electrode and a drain electrode overlapping with the semiconductor pattern and spaced apart from each other, a plasmonic color filter to which a common voltage is configured to be applied, and comprising a same material as the gate electrode, disposed on a same layer as the gate electrode, and comprising a plurality of holes through which light is configured to be transmitted and a pixel electrode to which a gray scale voltage is configured to be applied, and overlapping with the plasmonic color filter, and electrically connected to the drain electrode.
Abstract:
A thin film transistor array substrate and a method of manufacturing the thin film transistor array substrate are provided. The thin film transistor array substrate includes: a substrate; a gate electrode disposed on the substrate; a gate insulating layer disposed on the gate electrode; a semiconductor pattern disposed on the gate insulating layer; a source electrode and a drain electrode disposed on the semiconductor pattern and spaced apart from each other; and a hard mask pattern disposed on the source electrode and the drain electrode.
Abstract:
A contact portion of wiring and a method of manufacturing the same are disclosed. A contact portion of wiring according to an embodiment includes: a substrate; a conductive layer disposed on the substrate; an interlayer insulating layer disposed on the conductive layer and having a contact hole; a metal layer disposed on the conductive layer and filling the contact hole; and a transparent electrode disposed on the interlayer insulating layer and connected to the metal layer, wherein the interlayer insulating layer includes a lower insulating layer and an upper insulating layer disposed on the lower insulating layer, the lower insulating layer is undercut at the contact hole, and the metal layer fills in the portion where the lower insulating layer is undercut.
Abstract:
A touch screen panel including a touch electrode disposed on a base substrate, the touch electrode including a plurality of mesh patterns formed by crossing of metal wirings. The mesh patterns include a main electrode pattern and a buffer pattern overlapping the main electrode pattern, the buffer pattern having a thickness greater than 20% of a thickness of the main electrode pattern and less than 30% of a thickness of the main electrode pattern.
Abstract:
An imprint lithography method includes disposing a mask layer on a base substrate in first and in second areas, reducing a thickness of the mask layer in the first area, disposing a first planarization layer on the mask layer in the first and second areas, forming a first imprint pattern on the first planarization layer, forming a first planarization layer pattern by etching the first planarization layer using the first imprint pattern, forming a first mask pattern in the first area by etching the mask layer using the first planarization layer pattern, diposing a second planarization layer on the first mask pattern and the mask layer in the first and second areas, forming a second imprint pattern on the second planarization layer, forming a second planarization layer pattern by etching the planarization layer using the second imprint pattern, and forming a second mask pattern in the second area.