Invention Application
- Patent Title: SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME
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Application No.: US15184578Application Date: 2016-06-16
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Publication No.: US20160300987A1Publication Date: 2016-10-13
- Inventor: Daisuke SANGA , Yuta OKA
- Applicant: NICHIA CORPORATION
- Applicant Address: JP Anan-shi
- Assignee: NICHIA CORPORATION
- Current Assignee: NICHIA CORPORATION
- Current Assignee Address: JP Anan-shi
- Priority: JP2014-086142 20140418
- Main IPC: H01L33/60
- IPC: H01L33/60 ; H01L33/50 ; H01L33/38

Abstract:
A semiconductor light emitting device that achieves miniaturization and high brightness is provided. The semiconductor light emitting device has a light extraction surface (6) parallel to a lamination direction of a semiconductor layer (2). The semiconductor light emitting device includes a light guide member (3) placed on the semiconductor layer (2) and having a sloped surface (7) with a side surface opposite to the light extraction surface (6) sloped to the light extraction surface and a light-reflecting member (4) placed on a surface of the light guide member including at least the sloped surface of the light guide member.
Public/Granted literature
- US09620689B2 Semiconductor light emitting device and method of manufacturing the same Public/Granted day:2017-04-11
Information query
IPC分类: