发明申请
US20160307743A1 CHAMBER WITH VERTICAL SUPPORT STEM FOR SYMMETRIC CONDUCTANCE AND RF DELIVERY
审中-公开
具有垂直支撑的框架，用于对称导线和射频输送
- 专利标题： CHAMBER WITH VERTICAL SUPPORT STEM FOR SYMMETRIC CONDUCTANCE AND RF DELIVERY
- 专利标题（中）： 具有垂直支撑的框架，用于对称导线和射频输送
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申请号： US15068508申请日： 2016-03-11
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公开(公告)号： US20160307743A1公开(公告)日： 2016-10-20
- 发明人: Daniel Arthur Brown , John Patrick Holland , Michael C. Kellogg , James E. Tappan , Jerrel K. Antolik , Ian Kenworthy , Theo Panagopoulos , Zhigang Chen
- 申请人： Lam Research Corporation
- 主分类号： H01J37/32
- IPC分类号： H01J37/32
摘要：
A plasma chamber is provided to increase conductance within the plasma chamber and to increase uniformity of the conductance. A radio frequency (RF) path for supplying power to the plasma chamber is symmetric with respect to a center axis of the plasma chamber. Moreover, pumps used to remove materials from the plasma chamber are located symmetric with respect to the center axis. The symmetric arrangements of the RF paths and the pumps facilitate an increase in conductance uniformity within the plasma chamber.