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1.发明公开公开(公告)号：US20240347366A1
公开(公告)日：2024-10-17
申请号：US18610138
申请日：2024-03-19
IPC分类号： H01L21/683 , H01J37/32 , H01L21/67
CPC分类号： H01L21/6833 , H01J37/32724 , H01L21/67109 , H01L21/6831 , H01J2237/002 , H01J2237/2007
摘要： An electrostatic chuck for a substrate processing system is provided and includes a baseplate, an intermediate layer disposed on the baseplate, and a top plate. The top plate is bonded to the baseplate via the intermediate layer and is configured to electrostatically clamp to a substrate. The top plate includes a monopolar clamping electrode and seals. The monopolar clamping electrode includes a groove opening pattern with coolant gas groove opening sets. The seals separate coolant gas zones. The coolant gas zones include four or more coolant gas zones. Each of the coolant gas zones includes distinct coolant gas groove sets. The top plate includes the distinct coolant gas groove sets. Each of the distinct coolant gas groove sets has one or more coolant gas supply holes and corresponds to a respective one of the coolant gas groove opening sets.
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公开(公告)号：US11069553B2
公开(公告)日：2021-07-20
申请号：US15634365
申请日：2017-06-27
发明人： Alexander Matyushkin , John Patrick Holland , Harmeet Singh , Alexei Marakhtanov , Keith Gaff , Zhigang Chen , Felix Kozakevich
IPC分类号： H01L21/683 , H01L21/67
摘要： A substrate support for a substrate processing system includes a baseplate, a bond layer provided on the baseplate, and a ceramic layer arranged on the bond layer. The ceramic layer includes a first region and a second region located radially outward of the first region, the first region has a first thickness, the second region has a second thickness, and the first thickness is greater than the second thickness.
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公开(公告)号：US20190244788A1
公开(公告)日：2019-08-08
申请号：US16384442
申请日：2019-04-15
发明人： Alexei Marakhtanov , Felix Kozakevich , Michael C. Kellogg , John Patrick Holland , Zhigang Chen , Kenneth Lucchesi , Lin Zhao
IPC分类号： H01J37/32 , H01L21/3065 , H01L21/67 , H01L21/687
CPC分类号： H01J37/3299 , H01J37/32091 , H01J37/32155 , H01J37/32165 , H01J37/32183 , H01J37/32385 , H01J37/32568 , H01J37/32642 , H01J37/32715 , H01J37/32935 , H01J2237/327 , H01J2237/334 , H01L21/3065 , H01L21/67069 , H01L21/68735
摘要： Systems and methods for achieving a pre-determined factor associated with the edge region within the plasma chamber is described. One of the methods includes providing an RF signal to a main electrode within the plasma chamber. The RF signal is generated based on a frequency of operation of a first RF generator. The method further includes providing another RF signal to an edge electrode within the plasma chamber. The other RF signal is generated based on the frequency of operation of the first RF generator. The method includes receiving a first measurement of a variable, receiving a second measurement of the variable, and modifying a phase of the other RF signal based on the first measurement and the second measurement. The method includes changing a magnitude of a variable associated with a second RF generator to achieve the pre-determined factor.
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4.发明授权公开(公告)号：US10340122B2
公开(公告)日：2019-07-02
申请号：US16013811
申请日：2018-06-20
IPC分类号： H01J37/32
摘要： Systems and methods for controlling a process applied to a substrate within a plasma chamber are described. The systems and methods include generating and supplying odd harmonic signals and summing the odd harmonic signals to generate an added signal. The added signal is supplied to an electrode within the plasma chamber for processing the substrate. The use of odd harmonic signals facilitates high aspect ratio etching of the substrate.
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公开(公告)号：US10304662B2
公开(公告)日：2019-05-28
申请号：US16008529
申请日：2018-06-14
发明人： Alexei Marakhtanov , Lin Zhao , Felix Kozakevich , Kenneth Lucchesi , Zhigang Chen , John Patrick Holland
摘要： Systems and methods for providing a multi regime plasma wafer processing are described. The systems and methods have three states. During a first one of the states, an etching operation is performed. In a second one of the states, a power level of a kilohertz radio frequency signal is greater than zero to increase directionality of ions that are incident on a bottom surface of a stack layer. In a third one of the states, there is a reduction in a loss of mask on top of the stack layer and deposition may be performed.
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公开(公告)号：US10115564B2
公开(公告)日：2018-10-30
申请号：US15682164
申请日：2017-08-21
摘要： An impedance matching circuit (IMC) is described. The IMC includes a first circuit that includes a first plurality of tuning elements defined along a path. The first circuit has an input coupled to a kilohertz (kHz) radio frequency (RF) generator. The first circuit is coupled to an output. The IMC further includes a second circuit having a second plurality of tuning elements. The second circuit has an input coupled to a megahertz (MHz) RF generator and is coupled to the output. The IMC includes a uniformity control circuit (UCC) defined from at least one of the plurality of tuning elements of the first circuit. The UCC is connected serially along the path of the first circuit to define a capacitance that at least partially influences a radial uniformity profile in an etch rate produced by a plasma chamber.
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公开(公告)号：US20180025891A1
公开(公告)日：2018-01-25
申请号：US15636519
申请日：2017-06-28
发明人： Alexei Marakhtanov , Felix Kozakevich , Michael C. Kellogg , John Patrick Holland , Zhigang Chen , Kenneth Lucchesi , Lin Zhao
IPC分类号： H01J37/32 , H01L21/687 , H01L21/3065 , H01L21/67
CPC分类号： H01J37/3299 , H01J37/32091 , H01J37/32155 , H01J37/32165 , H01J37/32183 , H01J37/32385 , H01J37/32568 , H01J37/32642 , H01J37/32715 , H01J37/32935 , H01J2237/327 , H01J2237/334 , H01L21/3065 , H01L21/67069 , H01L21/68735
摘要： Systems and methods for achieving a pre-determined factor associated with the edge region within the plasma chamber is described. One of the methods includes providing an RF signal to a main electrode within the plasma chamber. The RF signal is generated based on a frequency of operation of a first RF generator. The method further includes providing another RF signal to an edge electrode within the plasma chamber. The other RF signal is generated based on the frequency of operation of the first RF generator. The method includes receiving a first measurement of a variable, receiving a second measurement of the variable, and modifying a phase of the other RF signal based on the first measurement and the second measurement. The method includes changing a magnitude of a variable associated with a second RF generator to achieve the pre-determined factor.
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公开(公告)号：US20170162368A1
公开(公告)日：2017-06-08
申请号：US15439838
申请日：2017-02-22
CPC分类号： H01J37/32183 , H01F38/14 , H01F2038/146 , H01J37/32128 , H01J37/3255 , H01J37/32568 , H03H7/38 , H03H7/40
摘要： An impedance matching circuit (IMC) is described. The impedance matching circuit includes a first circuit. The first circuit has an input coupled to a kilohertz (kHz) radio frequency (RF) generator. The IMC includes a second circuit. The second circuit has an input coupled to a low frequency megahertz (MHz) RF generator. The IMC includes a third circuit. The third circuit has an input coupled to a high frequency MHz RF generator. The IMC includes an output of the first, second, and third circuits coupled to an input of an RF transmission line. The first circuit and the second circuit provide isolation between a kHz RF signal sent through the first circuit and a low frequency MHz RF signal sent through the second circuit.
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公开(公告)号：US20170110356A1
公开(公告)日：2017-04-20
申请号：US14887166
申请日：2015-10-19
发明人： Alexander Matyushkin , Alexei Marakhtanov , John Patrick Holland , Keith Gaff , Felix Kozakevich
IPC分类号： H01L21/683 , H01L21/687
CPC分类号： H01L21/68785 , H01L21/67109 , H01L21/6833
摘要： An Electrostatic Chuck (ESC) in a chamber of a semiconductor manufacturing apparatus is presented for eliminating cooling-gas light-up. One wafer support includes a baseplate connected to a radiofrequency power source, a dielectric block, gas supply channels for cooling the wafer bottom, and first and second electrodes. The dielectric block is situated above the baseplate and supports the wafer when present. The first electrode is embedded in the top half of the dielectric block, where the top surface of the first electrode is substantially parallel to a top surface of the dielectric block, and the first electrode is connected to a DC power source. Further, the second electrode is embedded in a bottom half of the dielectric block, the second electrode being electrically connected to the first electrode, where the bottom surface of the second electrode is substantially parallel to a top surface of the baseplate.
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公开(公告)号：US11942351B2
公开(公告)日：2024-03-26
申请号：US18139660
申请日：2023-04-26
IPC分类号： H01L21/683 , H01J37/32 , H01L21/67
CPC分类号： H01L21/6833 , H01J37/32724 , H01L21/67109 , H01L21/6831 , H01J2237/002 , H01J2237/2007
摘要： An electrostatic chuck for a substrate processing system is provided and includes a baseplate, an intermediate layer disposed on the baseplate, and a top plate. The top plate is bonded to the baseplate via the intermediate layer and is configured to electrostatically clamp to a substrate. The top plate includes a monopolar clamping electrode and seals. The monopolar clamping electrode includes a groove opening pattern with coolant gas groove opening sets. The seals separate coolant gas zones. The coolant gas zones include four or more coolant gas zones. Each of the coolant gas zones includes distinct coolant gas groove sets. The top plate includes the distinct coolant gas groove sets. Each of the distinct coolant gas groove sets has one or more coolant gas supply holes and corresponds to a respective one of the coolant gas groove opening sets.
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