公开(公告)号：US11195706B2

公开(公告)日：2021-12-07

申请号：US16384442

申请日：2019-04-15

申请人： Lam Research Corporation

发明人： Alexei Marakhtanov ,  Felix Kozakevich ,  Michael C. Kellogg ,  John Patrick Holland ,  Zhigang Chen ,  Kenneth Lucchesi ,  Lin Zhao

IPC分类号： H01J37/32 ,  H01L21/3065 ,  H01L21/67 ,  H01L21/687

摘要： Systems and methods for achieving a pre-determined factor associated with the edge region within the plasma chamber is described. One of the methods includes providing an RF signal to a main electrode within the plasma chamber. The RF signal is generated based on a frequency of operation of a first RF generator. The method further includes providing another RF signal to an edge electrode within the plasma chamber. The other RF signal is generated based on the frequency of operation of the first RF generator. The method includes receiving a first measurement of a variable, receiving a second measurement of the variable, and modifying a phase of the other RF signal based on the first measurement and the second measurement. The method includes changing a magnitude of a variable associated with a second RF generator to achieve the pre-determined factor.

公开(公告)号：US20190080885A1

公开(公告)日：2019-03-14

申请号：US16008529

申请日：2018-06-14

申请人： Lam Research Corporation

发明人： Alexei Marakhtanov ,  Lin Zhao ,  Felix Kozakevich ,  Kenneth Lucchesi ,  Zhigang Chen ,  John Patrick Holland

IPC分类号： H01J37/32

摘要： Systems and methods for providing a multi regime plasma wafer processing are described. The systems and methods have three states. During a first one of the states, an etching operation is performed. In a second one of the states, a power level of a kilohertz radio frequency signal is greater than zero to increase directionality of ions that are incident on a bottom surface of a stack layer. In a third one of the states, there is a reduction in a loss of mask on top of the stack layer and deposition may be performed.

公开(公告)号：US10115568B2

公开(公告)日：2018-10-30

申请号：US15825021

申请日：2017-11-28

申请人： Lam Research Corporation

发明人： Michael C. Kellogg ,  Alexei Marakhtanov ,  John Patrick Holland ,  Zhigang Chen ,  Felix Kozakevich ,  Kenneth Lucchesi

IPC分类号： H01J37/32 ,  H01J37/147

摘要： Systems and methods for controlling directionality of ion flux at an edge region within a plasma chamber are described. One of the systems includes a radio frequency (RF) generator that is configured to generate an RF signal, an impedance matching circuit coupled to the RF generator for receiving the RF signal to generate a modified RF signal, and a plasma chamber. The plasma chamber includes an edge ring and a coupling ring located below the edge ring and coupled to the first impedance matching circuit to receive the modified RF signal. The coupling ring includes an electrode that generates a capacitance between the electrode and the edge ring to control the directionality of the ion flux upon receiving the modified RF signal.

公开(公告)号：US10049862B2

公开(公告)日：2018-08-14

申请号：US15068508

申请日：2016-03-11

申请人： Lam Research Corporation

发明人： Daniel Arthur Brown ,  John Patrick Holland ,  Michael C. Kellogg ,  James E. Tappan ,  Jerrel K. Antolik ,  Ian Kenworthy ,  Theo Panagopoulos ,  Zhigang Chen

IPC分类号： H01J37/32

摘要： A plasma chamber is provided to increase conductance within the plasma chamber and to increase uniformity of the conductance. A radio frequency (RF) path for supplying power to the plasma chamber is symmetric with respect to a center axis of the plasma chamber. Moreover, pumps used to remove materials from the plasma chamber are located symmetric with respect to the center axis. The symmetric arrangements of the RF paths and the pumps facilitate an increase in conductance uniformity within the plasma chamber.

公开(公告)号：US20180082822A1

公开(公告)日：2018-03-22

申请号：US15825021

申请日：2017-11-28

申请人： Lam Research Corporation

发明人： Michael C. Kellogg ,  Alexei Marakhtanov ,  John Patrick Holland ,  Zhigang Chen ,  Felix Kozakevich ,  Kenneth Lucchesi

IPC分类号： H01J37/32 ,  H01J37/147

CPC分类号： H01J37/32155 ,  H01J37/1471 ,  H01J37/32091 ,  H01J37/32366 ,  H01J37/32642

摘要： Systems and methods for controlling directionality of ion flux at an edge region within a plasma chamber are described. One of the systems includes a radio frequency (RF) generator that is configured to generate an RF signal, an impedance matching circuit coupled to the RF generator for receiving the RF signal to generate a modified RF signal, and a plasma chamber. The plasma chamber includes an edge ring and a coupling ring located below the edge ring and coupled to the first impedance matching circuit to receive the modified RF signal. The coupling ring includes an electrode that generates a capacitance between the electrode and the edge ring to control the directionality of the ion flux upon receiving the modified RF signal.

公开(公告)号：US20160307743A1

公开(公告)日：2016-10-20

申请号：US15068508

申请日：2016-03-11

申请人： Lam Research Corporation

发明人： Daniel Arthur Brown ,  John Patrick Holland ,  Michael C. Kellogg ,  James E. Tappan ,  Jerrel K. Antolik ,  Ian Kenworthy ,  Theo Panagopoulos ,  Zhigang Chen

IPC分类号： H01J37/32

CPC分类号： H01J37/32816 ,  H01J37/32082 ,  H01J37/32183 ,  H01J37/32651 ,  H01J37/32724

摘要： A plasma chamber is provided to increase conductance within the plasma chamber and to increase uniformity of the conductance. A radio frequency (RF) path for supplying power to the plasma chamber is symmetric with respect to a center axis of the plasma chamber. Moreover, pumps used to remove materials from the plasma chamber are located symmetric with respect to the center axis. The symmetric arrangements of the RF paths and the pumps facilitate an increase in conductance uniformity within the plasma chamber.

摘要翻译： 提供等离子体室以增加等离子体室内的电导并增加电导的均匀性。 用于向等离子体室供电的射频（RF）路径相对于等离子体室的中心轴对称。 此外，用于从等离子体室移除材料的泵相对于中心轴线对称。 RF路径和泵的对称布置有助于提高等离子体室内的电导均匀性。

公开(公告)号：US20150243483A1

公开(公告)日：2015-08-27

申请号：US14187163

申请日：2014-02-21

申请人： Lam Research Corporation

发明人： Zhigang Chen ,  Rajinder Dhindsa

IPC分类号： H01J37/32 ,  H01L21/67

CPC分类号： H01J37/32183 ,  H01J37/32082 ,  H01J37/32174

摘要： A chamber for plasma processing semiconductor wafers is provided, comprising: a support chuck disposed in the chamber; a top electrode disposed over the support chuck and within the chamber; an RF supply rod electrically connected between an RF power source and the support chuck for providing RF power to the chamber, the RF supply rod having a corrugated surface, the corrugated surface having recessed and protruded regions that are arranged in a lengthwise repeating pattern along a segment of the RF supply rod, the corrugated surface producing a lengthwise minimum surface path along the segment that is greater than a length of the segment, the lengthwise minimum surface path defining a target length of the RF supply rod.

摘要翻译： 提供了一种用于等离子体处理半导体晶片的腔室，包括：设置在腔室中的支撑卡盘; 设置在所述支撑卡盘上并在所述腔室内的顶部电极; RF供应杆电连接在RF电源和支撑卡盘之间，用于向腔室提供RF功率，RF供应杆具有波纹表面，波纹表面具有沿着纵向重复图案沿着沿着纵向重复图案布置的凹入和突出区域 所述波纹表面沿着所述段产生沿着所述段的长度的纵向最小表面路径，所述纵向最小表面路径限定所述RF供应杆的目标长度。

公开(公告)号：US20150083690A1

公开(公告)日：2015-03-26

申请号：US14559790

申请日：2014-12-03

申请人： Lam Research Corporation

发明人： Zhigang Chen ,  Eric Hudson

IPC分类号： H01L21/70

CPC分类号： H01L21/70 ,  H01J37/32091 ,  H01J37/32183

摘要： System and methods for plasma processing of a wafer include a chamber with an electrode having a support surface and an outer edge region defined thereon. A radio frequency power is communicated to the electrode via a conductive delivery connection and returned through a conductive return connection. A capacitance is applied to a first end that causes appropriate capacitive adjustment and opposite impedance adjustment at a second end of the conductive delivery connection that is coupled to a dielectric surround structure that surrounds the electrode. The dielectric surround structure presents the opposite impedance adjustment near an outer edge of the electrode, such that increasing the capacitance at the first end causes a corresponding increase of impedance at the second end and a corresponding increase in voltage distribution near the outer edge region of the electrode that decreases toward a center of the support surface of the electrode.

摘要翻译： 用于等离子体处理晶片的系统和方法包括具有电极的室，其具有支撑表面和限定在其上的外边缘区域。 射频功率通过导电输送连接传送到电极，并通过导电返回连接返回。 电容被施加到第一端，其导致适当的电容调整，并且在导电输送连接的第二端处相反阻抗调节，该第二端耦合到围绕电极的电介质环绕结构。 电介质环绕结构在电极的外边缘附近呈现相反的阻抗调节，使得增加第一端处的电容导致在第二端处的阻抗相应增加，并且在外部边缘区域附近的电压分布相应增加 电极朝向电极的支撑表面的中心减小。

公开(公告)号：US10804129B2

公开(公告)日：2020-10-13

申请号：US15988581

申请日：2018-05-24

申请人： Lam Research Corporation

发明人： Christopher Kimball ,  Keith Gaff ,  Alexander Matyushkin ,  Zhigang Chen ,  Keith Comendant

IPC分类号： H01L21/683 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/285 ,  H01L21/67 ,  H01J37/32

摘要： An electrostatic chuck assembly for processing a semiconductor substrate is provided. The electrostatic chuck assembly includes a first layer, a baseplate, a second layer, and at least one annular gasket. The first layer includes ceramic material and a first radio frequency (RF) electrode. The first RF electrode is embedded in the ceramic material. The second layer is disposed between the first layer and the baseplate. The at least one annular gasket extends along an upper surface of the baseplate and through the second layer. The at least one annular gasket electrically couples the upper surface of the baseplate to the first RF electrode. RF power passes from the baseplate to the first RF electrode through the at least one annular gasket.

公开(公告)号：US10755895B2

公开(公告)日：2020-08-25

申请号：US15367469

申请日：2016-12-02

申请人： Lam Research Corporation

发明人： Alexei Marakhtanov ,  Zhigang Chen ,  John Patrick Holland

IPC分类号： H01J37/32 ,  H01L21/67 ,  H01L21/3065 ,  H01L21/311

摘要： A method for slope control of ion energy is described. The method includes receiving a setting indicating that an etch operation is to be performed using a radio frequency (RF) pulse signal. The RF pulse signal includes a first state and a second state. The first state has a higher power level than the second state. The method further includes receiving a pulse slope associated with the RF pulse signal. The pulse slope provides a transition between the first state and the second state. Also, the pulse slope is other than substantially infinite for reducing an amount of ion energy during the etch operation. The method includes determining power levels and timings for achieving the pulse slope and sending the power levels and the timings to an RF generator to generate the RF pulse signal.