- 专利标题： METHOD OF ETCHING A SEMICONDUCTOR LAYER OF A PHOTOVOLTAIC DEVICE
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申请号： US15196652申请日： 2016-06-29
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公开(公告)号： US20160308078A1公开(公告)日： 2016-10-20
- 发明人: Oleh P. Karpenko , Thomas A. Sorenson , Jianjun Wang
- 申请人： First Solar, Inc.
- 主分类号： H01L31/0236
- IPC分类号： H01L31/0236 ; H01L31/032 ; H01L31/0296 ; H01L31/074 ; H01L31/0288 ; H01L31/073 ; H01L31/0749 ; H01L31/0224 ; H01L31/0376
摘要：
A method and apparatus provide for a roughened back surface of a semiconductor absorber layer of a photovoltaic device to improve adhesion. The roughened back surface may be achieved through an etching process.