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公开(公告)号:US20210036178A1
公开(公告)日:2021-02-04
申请号:US16966424
申请日:2019-01-14
申请人: First Solar, Inc.
发明人: Sachit Grover , Dingyuan Lu , Roger Malik , Gang Xiong
IPC分类号: H01L31/18 , H01L31/0296 , H01L31/073
摘要: According to the embodiments provided herein, a method for doping an absorber layer can include contacting the absorber layer with an annealing compound. The annealing compound can include cadmium chloride and a group V salt comprising an anion and a cation. The anion, the cation, or both can include a group V element. The method can include annealing the absorber layer, whereby the absorber layer is doped with at least a portion of the group V element of the annealing compound.
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公开(公告)号:US20200381567A1
公开(公告)日:2020-12-03
申请号:US16770388
申请日:2017-12-07
申请人: First Solar, Inc.
发明人: Hongbo Cao , Sachit Grover , William Hullinger Huber , Xiaoping Li , Dingyuan Lu , Roger Malik , Hongying Peng , Joseph John Shiang , Qianqian Xin , Gang Xiong
IPC分类号: H01L31/0296 , H01L31/073 , H01L31/18
摘要: A photovoltaic device (100) can include an absorber layer (160). The absorber layer (160) can be doped p-type with a Group V dopant and can have a carrier concentration of the Group V dopant greater than 4×1015cm-3. The absorber layer (160) can include oxygen in a central region of the absorber layer (160). The absorber layer (160) can include an alkali metal in the central region of the absorber layer (160). Methods for carrier activation can include exposing an absorber layer (160) to an annealing compound in a reducing environment (220). The annealing compound (224) can include cadmium chloride and an alkali metal chloride.
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公开(公告)号:US10818806B2
公开(公告)日:2020-10-27
申请号:US16794708
申请日:2020-02-19
发明人: Jiuxia Yang , Jiantao Liu , Xuebo Zhang
IPC分类号: H01L27/148 , H01L31/0224 , H01L31/073 , H01L31/18
摘要: A cathode of a solar unit and a solar cell including thereof are provided. The cathode of solar unit includes a film which is formed by curing a composition, and a pixel electrode which is formed on the film; wherein the composition includes conducting polymer, curing material, ionic liquid and phosphorene, wherein the weight ratio of the phosphorene to the sum of the conducting polymer, the curing material and the ionic liquid is about 2%˜10%.
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公开(公告)号:US10707366B2
公开(公告)日:2020-07-07
申请号:US15938246
申请日:2018-03-28
发明人: John Hart , Zachary Bittner , Samantha Whipple , Nathaniel Miller , Daniel Derkacs , Paul Sharps
IPC分类号: H01L31/0725 , H01L31/0735 , H01L31/18 , H01L31/054 , H01L31/044 , H01L31/074 , H01L31/078 , H01L31/0687 , H01L31/076 , H01L27/30 , H01L31/0693 , H01L31/073 , H01L31/0745 , H01L31/0368 , H01L21/28 , H01L29/737 , H01L31/0376 , H01L31/0352 , H01L31/20
摘要: A solar cell comprising a bulk germanium silicon growth substrate; a diffused photoactive junction in the germanium silicon substrate; and a sequence of subcells grown over the substrate, with the first grown subcell either being lattice matched or lattice mis-matched to the growth substrate.
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公开(公告)号:US20200075785A1
公开(公告)日:2020-03-05
申请号:US16547055
申请日:2019-08-21
发明人: Sun Jin YUN , Kwang Hoon JUNG , SOHYUN KIM
IPC分类号: H01L31/0224 , H01L31/028 , H01L31/0312 , H01L31/0296 , H01L31/032 , H01L31/0336 , H01L31/0745 , H01L31/073 , H01L31/0749 , H01L31/18
摘要: Provided are a solar cell and a method of manufacturing the same. The solar cell includes a substrate, a first electrode on the substrate, a second electrode on the first electrode, and at least one semiconductor layer interposed between the first and second electrodes, and a first connection layer interposed between the first electrode and the semiconductor layer and electrically connecting the first and second electrodes to each other. The first connection layer includes a plurality of two-dimensional layers vertically extending from a top surface of the first electrode to a bottom surface of the semiconductor layer. The two-dimensional layers include a metal compound.
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公开(公告)号:US20190221685A1
公开(公告)日:2019-07-18
申请号:US16363499
申请日:2019-03-25
申请人: First Solar, Inc.
发明人: Dan Damjanovic , Feng Liao , Rick Powell , Rui Shao , Jigish Trivedi , Zhibo Zhao
IPC分类号: H01L31/0296 , H01L31/18 , H01L31/073
CPC分类号: H01L31/02966 , H01L31/073 , H01L31/1832 , H01L31/1864 , Y02E10/543 , Y02P70/521
摘要: A photovoltaic device includes a substrate structure and a p-type semiconductor absorber layer. A photovoltaic device may include a CdSeTe layer. A process for manufacturing a photovoltaic device includes forming a CdSeTe layer over a substrate. The process includes forming a p-type cadmium selenide telluride absorber layer.
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公开(公告)号:US10290755B1
公开(公告)日:2019-05-14
申请号:US14315316
申请日:2014-06-25
申请人: Achyut Kumar Dutta
发明人: Achyut Kumar Dutta
IPC分类号: H01L31/0352 , H01L31/068 , H01L51/44 , H01L31/18 , H01L31/072 , H01L31/07 , H01L31/0236 , H01G9/20 , H01L51/42 , H01L31/0735 , H01L31/073 , H01L31/0304 , H01L31/0296
摘要: Novel structures of photovoltaic cells are provided. The cells are based on nanometer or micrometer-scaled wires, tubes, and/or rods, which are made of electronic materials covering semiconductors, insulators, and may be metallic in structure. These photovoltaic cells have large power generation capability per unit physical area over the conventional cells. These cells will have enormous applications such as in space, commercial, residential and industrial applications.
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公开(公告)号:US10056507B2
公开(公告)日:2018-08-21
申请号:US14740501
申请日:2015-06-16
申请人: First Solar, Inc.
发明人: Rui Shao , Markus Gloeckler
IPC分类号: H01L31/18 , H01L31/073 , H01L31/0224
CPC分类号: H01L31/022466 , H01L31/022483 , H01L31/073 , H01L31/18 , H01L31/1828 , H01L31/1884 , Y02E10/543 , Y02P70/521
摘要: Methods and devices are described for a photovoltaic device and substrate structure. In one embodiment, a photovoltaic device includes a substrate structure and a CdTe absorber layer, the substrate structure including a Zn1-xMgxO window layer and a low conductivity buffer layer. Another embodiment is directed to a process for manufacturing a photovoltaic device including forming a Zn1-xMgxO window layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process and vapor transport deposition process. The process including forming a CdTe absorber layer above the Zn1-xMgxO window layer.
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公开(公告)号:US09882526B2
公开(公告)日:2018-01-30
申请号:US14724426
申请日:2015-05-28
IPC分类号: H01L31/00 , H02S40/34 , H01L31/0693 , H01L31/0352 , B82Y20/00 , B82Y30/00 , H01L31/02 , H01L31/028 , H01L31/0296 , H01L31/0304 , H01L31/032 , H01L31/068 , H01L31/042 , H02S40/32 , H01L31/073 , H01L31/0735 , H01L31/0749 , B82Y99/00
CPC分类号: H02S40/34 , B82Y20/00 , B82Y30/00 , B82Y99/00 , H01L31/02008 , H01L31/02021 , H01L31/028 , H01L31/0296 , H01L31/0304 , H01L31/0322 , H01L31/0352 , H01L31/035209 , H01L31/035218 , H01L31/035236 , H01L31/042 , H01L31/068 , H01L31/0682 , H01L31/0693 , H01L31/073 , H01L31/0735 , H01L31/0749 , H02S40/32 , Y02E10/541 , Y02E10/544 , Y02E10/547 , Y02P70/521 , Y10S977/755 , Y10S977/774 , Y10S977/948
摘要: Designs of extremely high efficiency solar cells are described. A novel alternating bias scheme enhances the photovoltaic power extraction capability above the cell band-gap by enabling the extraction of hot carriers. When applied in conventional solar cells, this alternating bias scheme has the potential of more than doubling their yielded net efficiency. When applied in conjunction with solar cells incorporating quantum wells (QWs) or quantum dots (QDs) based solar cells, the described alternating bias scheme has the potential of extending such solar cell power extraction coverage, possibly across the entire solar spectrum, thus enabling unprecedented solar power extraction efficiency. Within such cells, a novel alternating bias scheme extends the cell energy conversion capability above the cell material band-gap while the quantum confinement structures are used to extend the cell energy conversion capability below the cell band-gap. Light confinement cavities are incorporated into the cell structure in order to allow the absorption of the cell internal photo emission, thus further enhancing the cell efficiency.
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公开(公告)号:US20170309477A1
公开(公告)日:2017-10-26
申请号:US15541251
申请日:2015-12-15
IPC分类号: H01L21/02 , H01L31/073 , H01L31/0296 , H01L31/0224 , H01L31/18 , C23C22/76
CPC分类号: H01L21/02255 , C23C22/76 , H01L31/022425 , H01L31/022466 , H01L31/0296 , H01L31/073 , H01L31/1836 , H01L31/1884 , Y02E10/543
摘要: The present invention proposes a method to form a gradient thin film using a spray pyrolysis technique. The method comprises providing a base substrate, preparing a spray aqueous solution by mixing at least two precursor compounds comprising at least two different elements and spraying the spray aqueous solution onto the base substrate. According to the present invention, the ratio of the concentration of the at least two different elements within the spray aqueous solution is varied while performing the method. In this way, a thin film having a gradient of elemental composition over its layer thickness may be formed.
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