发明申请
US20160314939A1 Plasma-resistant Aluminum Oxynitride Based Reactor Components for Semi-Conductor Manufacturing and Processing Equipment
审中-公开
用于半导体制造和加工设备的等离子体耐氧化铝基反应器组件
- 专利标题： Plasma-resistant Aluminum Oxynitride Based Reactor Components for Semi-Conductor Manufacturing and Processing Equipment
- 专利标题（中）： 用于半导体制造和加工设备的等离子体耐氧化铝基反应器组件
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申请号： US15136944申请日： 2016-04-24
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公开(公告)号： US20160314939A1公开(公告)日： 2016-10-27
- 发明人: Suri A Sastri , Mohan babu Ramisetty
- 申请人： Surmet Corporation
- 主分类号： H01J37/32
- IPC分类号： H01J37/32 ; H01L21/3065 ; H01L21/285 ; H01L21/3213 ; H01L21/02 ; H01L21/67 ; H01L21/311
摘要：
An aluminum oxynitride-based plasma reactor for processing of semiconductor substrates is provided. A method for making an aluminum oxynitride reactor components is also provided. A method for processing a semiconductor substrate in an aluminum oxynitride based plasma reactor is also provided.
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