Invention Application
US20160314968A1 COMPOSITION FOR LAYERED TRANSITION METAL CHALCOGENIDE COMPOUND LAYER AND METHOD OF FORMING LAYERED TRANSITION METAL CHALCOGENIDE COMPOUND LAYER
审中-公开
层状过渡金属氯化铝复合层的组合物和形成层状过渡金属氯化铝复合层的方法
- Patent Title: COMPOSITION FOR LAYERED TRANSITION METAL CHALCOGENIDE COMPOUND LAYER AND METHOD OF FORMING LAYERED TRANSITION METAL CHALCOGENIDE COMPOUND LAYER
- Patent Title (中): 层状过渡金属氯化铝复合层的组合物和形成层状过渡金属氯化铝复合层的方法
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Application No.: US15134693Application Date: 2016-04-21
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Publication No.: US20160314968A1Publication Date: 2016-10-27
- Inventor: Haeryong KIM , Hyeonjin Shin , Seongjun Park
- Applicant: Samsung Electronics Co., Ltd.
- Priority: KR10-2015-00646899 20150508
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L29/786 ; H01L29/66 ; H01L29/423 ; C23C16/56 ; C09D1/00
Abstract:
Provided are a composition for forming a layered transition metal chalcogenide compound layer and a method of forming a layered transition metal chalcogenide compound layer by using the composition. The composition includes at least one of a transition metal precursor represented by Formula 1 and a chalcogenide precursor represented by Formula 2. Ma(R1)6-b-c(H)b(R2)c [Formula 1] wherein, in Formula 1, M, R1, R2, a, b, and c are the same as defined in the detailed description, and M′kX2 [Formula 2] wherein, in Formula 2, M′ and X are the same as defined in the detailed description.
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