公开(公告)号：US20230420490A1

公开(公告)日：2023-12-28

申请号：US18465439

申请日：2023-09-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeonggyu SONG ,  Kyooho JUNG ,  Younsoo KIM ,  Haeryong KIM ,  Jooho LEE

IPC: H10B12/00 ,  H01L21/285

CPC classification number: H01L28/60 ,  H01L21/28556 ,  H10B12/30

Abstract: A capacitor includes: a lower electrode including a metal nitride represented by MM′N, wherein M is a metal element, M′ is an element different from M, and N is nitrogen; a dielectric layer on the lower electrode; an interfacial layer between the lower electrode and the dielectric layer and including a metal nitrate represented by MM′ON, wherein M is a metal element, M′ is an element different from M, N is nitrogen, and O is oxygen; and an upper electrode on the dielectric layer.

公开(公告)号：US20230255019A1

公开(公告)日：2023-08-10

申请号：US18136984

申请日：2023-04-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chang-Su WOO ,  Haeryong KIM ,  Younsoo KIM ,  Sunmin MOON ,  Jeonggyu SONG ,  Kyooho JUNG

IPC: H10B12/00

CPC classification number: H10B12/315 ,  H10B12/033 ,  H10B12/34

Abstract: A semiconductor device includes conductive pillars on a semiconductor substrate, a first support pattern that contacts first portions of lateral surfaces of the conductive pillars and connects the conductive pillars to each other, the first support pattern including first support holes that expose second portions of the lateral surfaces of the conductive pillars, a capping conductive pattern that contacts the second portions of the lateral surfaces of the conductive pillars and exposes the first support pattern, the second portions of the lateral surfaces of the conductive pillars being in no contact with the first support pattern, and a dielectric layer that covers the first support pattern and the capping conductive pattern, the dielectric layer being spaced apart from the conductive pillars.

公开(公告)号：US20220278192A1

公开(公告)日：2022-09-01

申请号：US17749240

申请日：2022-05-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeonggyu SONG ,  Kyooho JUNG ,  Younsoo KIM ,  Haeryong KIM ,  Jooho LEE

IPC: H01L49/02 ,  H01L21/285 ,  H01L27/108

Abstract: A capacitor includes: a lower electrode including a metal nitride represented by MM′N, wherein M is a metal element, M′ is an element different from M, and N is nitrogen; a dielectric layer on the lower electrode; an interfacial layer between the lower electrode and the dielectric layer and including a metal nitrate represented by MM′ON, wherein M is a metal element, M′ is an element different from M, N is nitrogen, and O is oxygen; and an upper electrode on the dielectric layer.

公开(公告)号：US20210118982A1

公开(公告)日：2021-04-22

申请号：US16839641

申请日：2020-04-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeonggyu SONG ,  Kyooho JUNG ,  Younsoo KIM ,  Haeryong KIM ,  Jooho LEE

IPC: H01L49/02 ,  H01L27/108 ,  H01L21/285

Abstract: A capacitor includes: a lower electrode including a metal nitride represented by MM′N, wherein M is a metal element, M′ is an element different from M, and N is nitrogen; a dielectric layer on the lower electrode; an interfacial layer between the lower electrode and the dielectric layer and including a metal nitrate represented by MM′ON, wherein M is a metal element, M′ is an element different from M, N is nitrogen, and O is oxygen; and an upper electrode on the dielectric layer.

公开(公告)号：US20180358470A1

公开(公告)日：2018-12-13

申请号：US15892850

申请日：2018-02-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaeho LEE ,  Haeryong KIM ,  Sanghyun JO ,  Hyeonjin SHIN

IPC: H01L29/788 ,  H01L29/423 ,  H01L29/49 ,  H01L27/11521 ,  G11C11/54 ,  G11C11/56

CPC classification number: H01L29/7887 ,  B82Y10/00 ,  G11C11/54 ,  G11C11/56 ,  G11C11/5621 ,  G11C11/5628 ,  G11C11/5642 ,  G11C13/025 ,  G11C16/0441 ,  G11C16/10 ,  G11C16/26 ,  G11C2211/5612 ,  G11C2213/35 ,  H01L21/28273 ,  H01L27/11521 ,  H01L29/0673 ,  H01L29/42324 ,  H01L29/42332 ,  H01L29/49 ,  H01L29/78684 ,  H01L29/78687

Abstract: Provided are nonvolatile memory devices including 2-dimensional (2D) material and apparatuses including the nonvolatile memory devices. A nonvolatile memory device may include a storage stack including a plurality of charge storage layers between a channel element and a gate electrode facing the channel element. The plurality of charge storage layers may include a 2D material. An interlayer barrier layer may be further provided between the plurality of charge storage layers. The nonvolatile memory device may have a multi-bit or multi-level memory characteristic due to the plurality of charge storage layers.

公开(公告)号：US20230335665A1

公开(公告)日：2023-10-19

申请号：US18338631

申请日：2023-06-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sanghyun JO ,  Jaeho LEE ,  Haeryong KIM ,  Hyeonjin SHIN

IPC: H01L31/107 ,  H01L31/02 ,  H01L31/0224 ,  H01L31/0352 ,  H01S5/0687 ,  G01S7/481 ,  H01L31/028 ,  H01L31/032 ,  H01L27/146 ,  H01L31/101 ,  G01S17/931 ,  H10K39/32

CPC classification number: H01L31/1075 ,  H01L31/02027 ,  H01L31/022466 ,  H01L31/03529 ,  H01S5/0687 ,  G01S7/4816 ,  G01S7/4817 ,  H01L31/028 ,  H01L31/032 ,  H01L27/14643 ,  H01L31/035209 ,  H01L27/14647 ,  H01L31/035281 ,  H01L31/1013 ,  G01S17/931 ,  H10K39/32 ,  G05D2201/0213 ,  H01L31/0304

Abstract: A photodetector having a small form factor and having high detection efficiency with respect to both visible light and infrared rays may include a first electrode, a collector layer on the first electrode, a tunnel barrier layer on the collector layer, a graphene layer on the tunnel barrier layer, an emitter layer on the graphene layer, and a second electrode on the emitter layer. The photodetector may be included in an image sensor. An image sensor may include a substrate, an insulating layer on the substrate, and a plurality of photodetectors on the insulating layer. The photodetectors may be aligned with each other in a direction extending parallel or perpendicular to a top surface of the insulating layer. The photodetector may be included in a LiDAR system.

公开(公告)号：US20220367745A1

公开(公告)日：2022-11-17

申请号：US17857466

申请日：2022-07-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sanghyun JO ,  Jaeho LEE ,  Haeryong KIM ,  Hyeonjin SHIN

IPC: H01L31/107 ,  H01L31/02 ,  H01L31/0224 ,  H01L31/0352 ,  H01S5/0687 ,  G01S7/481 ,  H01L31/028 ,  H01L31/032 ,  H01L27/146 ,  H01L31/101 ,  H01L27/30 ,  G01S17/931

Abstract: A photodetector having a small form factor and having high detection efficiency with respect to both visible light and infrared rays may include a first electrode, a collector layer on the first electrode, a tunnel barrier layer on the collector layer, a graphene layer on the tunnel barrier layer, an emitter layer on the graphene layer, and a second electrode on the emitter layer. The photodetector may be included in an image sensor. An image sensor may include a substrate, an insulating layer on the substrate, and a plurality of photodetectors on the insulating layer. The photodetectors may be aligned with each other in a direction extending parallel or perpendicular to a top surface of the insulating layer. The photodetector may be included in a LiDAR system.

公开(公告)号：US20210384194A1

公开(公告)日：2021-12-09

申请号：US17172131

申请日：2021-02-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chang-Su WOO ,  Haeryong KIM ,  Younsoo KIM ,  Sunmin MOON ,  Jeonggyu SONG ,  Kyooho JUNG

IPC: H01L27/108

Abstract: A semiconductor device includes conductive pillars on a semiconductor substrate, a first support pattern that contacts first portions of lateral surfaces of the conductive pillars and connects the conductive pillars to each other, the first support pattern including first support holes that expose second portions of the lateral surfaces of the conductive pillars, a capping conductive pattern that contacts the second portions of the lateral surfaces of the conductive pillars and exposes the first support pattern, the second portions of the lateral surfaces of the conductive pillars being in no contact with the first support pattern, and a dielectric layer that covers the first support pattern and the capping conductive pattern, the dielectric layer being spaced apart from the conductive pillars.

公开(公告)号：US20200273698A1

公开(公告)日：2020-08-27

申请号：US16520990

申请日：2019-07-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeonggyu SONG ,  Kyooho JUNG ,  Yongsung KIM ,  Jeongil BANG ,  Jooho LEE ,  Junghwa KIM ,  Haeryong KIM ,  Myoungho JEONG

IPC: H01L21/02 ,  H01L29/786 ,  H01L29/66 ,  H01L21/768

Abstract: A semiconductor device and a method of manufacturing the semiconductor device are included. The method of manufacturing the semiconductor device includes forming a hafnium oxide layer on a substrate and crystallizing the hafnium oxide layer by using a hafnium cobalt oxide layer as a seed layer. According to the method of manufacturing the semiconductor device, a thin-film hafnium oxide layer may be easily crystallized.

公开(公告)号：US20200091219A1

公开(公告)日：2020-03-19

申请号：US16692603

申请日：2019-11-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Haeryong KIM ,  Jaeho Lee ,  Sanghyun Jo ,  Hyeonjin Shin

IPC: H01L27/146 ,  H01L31/0216 ,  H01L31/032 ,  H01L31/0352 ,  H01L31/109

Abstract: A photoelectric conversion element and an optical sensor including the same are disclosed. The photoelectric conversion element may include a plurality of lattice stacks repeatedly stacked on top of each other on a substrate and configured to have an effective band gap. The plurality of lattice stacks may each include a first active layer and a second active layer on the first active layer. The first active layer may include a first two-dimensional material having a first band gap. The second active layer may include a second two-dimensional material having a second band gap not overlapping the first band gap. An effective band gap may be adjusted based on the first two-dimensional materials and thicknesses of the first active layer and the second active layer and a number of times of plurality of lattice stacks.