Invention Application
- Patent Title: DOUBLE SIDE VIA LAST METHOD FOR DOUBLE EMBEDDED PATTERNED SUBSTRATE
- Patent Title (中): 双面嵌入式图案的双面方法
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Application No.: US14696355Application Date: 2015-04-24
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Publication No.: US20160315041A1Publication Date: 2016-10-27
- Inventor: You-Lung YEN , Chih-Cheng LEE , Yuan-Chang SU
- Applicant: Advanced Semiconductor Engineering, Inc.
- Assignee: Advanced Semiconductor Engineering, Inc.
- Current Assignee: Advanced Semiconductor Engineering, Inc.
- Main IPC: H01L23/498
- IPC: H01L23/498 ; H01L23/544 ; H01L21/683 ; H01L23/31 ; H01L21/48

Abstract:
An interposer substrate includes a first circuit pattern embedded at a first surface of a dielectric layer and a second circuit pattern embedded at a second surface of the dielectric layer; a middle patterned conductive layer in the dielectric layer between the first circuit pattern and the second circuit pattern; first conductive vias, where each first conductive via includes a first end adjacent to the first circuit pattern and a second end adjacent to the middle patterned conductive layer, wherein a width of the first end is greater than a width of the second end; second conductive vias, where each second conductive via including a third end adjacent to the second circuit pattern and a fourth end adjacent to the middle patterned conductive layer, wherein a width of the third end is greater than a width of the fourth end.
Public/Granted literature
- US09659853B2 Double side via last method for double embedded patterned substrate Public/Granted day:2017-05-23
Information query
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