Invention Application
US20160322092A1 MAGNETIC RANDOM ACCESS MEMORY CELL WITH A DUAL JUNCTION FOR TERNARY CONTENT ADDRESSABLE MEMORY APPLICATIONS
有权
用于三次内部可寻址存储器应用的双连接的磁性随机存取存储器单元
- Patent Title: MAGNETIC RANDOM ACCESS MEMORY CELL WITH A DUAL JUNCTION FOR TERNARY CONTENT ADDRESSABLE MEMORY APPLICATIONS
- Patent Title (中): 用于三次内部可寻址存储器应用的双连接的磁性随机存取存储器单元
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Application No.: US15190499Application Date: 2016-06-23
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Publication No.: US20160322092A1Publication Date: 2016-11-03
- Inventor: Bertrand Cambou
- Applicant: Crocus Technology SA
- Priority: EP11290150.9 20110328
- Main IPC: G11C11/16
- IPC: G11C11/16 ; G11C15/02
Abstract:
A MRAM cell including a first tunnel barrier layer between a soft ferromagnetic layer having a free magnetization and a first hard ferromagnetic layer having a first storage magnetization. A second tunnel barrier layer is between the soft ferromagnetic layer and a second hard ferromagnetic layer and has a second storage magnetization. The first storage magnetization is freely orientable at a first high predetermined temperature threshold and the second storage magnetization being freely orientable at a second predetermined high temperature threshold. The first high predetermined temperature threshold is higher than the second predetermined high temperature threshold. The MRAM cell can be used as a ternary content addressable memory (TCAM) and store up to three distinct state levels. The MRAM cell has a reduced size and can be made at low cost.
Public/Granted literature
- US09548094B2 Magnetic random access memory cell with a dual junction for ternary content addressable memory applications Public/Granted day:2017-01-17
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