发明申请
US20160322092A1 MAGNETIC RANDOM ACCESS MEMORY CELL WITH A DUAL JUNCTION FOR TERNARY CONTENT ADDRESSABLE MEMORY APPLICATIONS
有权
用于三次内部可寻址存储器应用的双连接的磁性随机存取存储器单元
- 专利标题： MAGNETIC RANDOM ACCESS MEMORY CELL WITH A DUAL JUNCTION FOR TERNARY CONTENT ADDRESSABLE MEMORY APPLICATIONS
- 专利标题（中）： 用于三次内部可寻址存储器应用的双连接的磁性随机存取存储器单元
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申请号： US15190499申请日： 2016-06-23
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公开(公告)号： US20160322092A1公开(公告)日： 2016-11-03
- 发明人: Bertrand Cambou
- 申请人： Crocus Technology SA
- 优先权： EP11290150.9 20110328
- 主分类号： G11C11/16
- IPC分类号： G11C11/16 ; G11C15/02
摘要：
A MRAM cell including a first tunnel barrier layer between a soft ferromagnetic layer having a free magnetization and a first hard ferromagnetic layer having a first storage magnetization. A second tunnel barrier layer is between the soft ferromagnetic layer and a second hard ferromagnetic layer and has a second storage magnetization. The first storage magnetization is freely orientable at a first high predetermined temperature threshold and the second storage magnetization being freely orientable at a second predetermined high temperature threshold. The first high predetermined temperature threshold is higher than the second predetermined high temperature threshold. The MRAM cell can be used as a ternary content addressable memory (TCAM) and store up to three distinct state levels. The MRAM cell has a reduced size and can be made at low cost.
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