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1.发明授权Magnetic random access memory cell with a dual junction for ternary content addressable memory applications 有权具有用于三元内容可寻址存储器应用的双结的磁性随机存取存储器单元公开(公告)号：US09548094B2
公开(公告)日：2017-01-17
申请号：US15190499
申请日：2016-06-23
Applicant: Crocus Technology SA
Inventor： Bertrand Cambou
CPC classification number: G11C11/161 , G11C11/1673 , G11C11/1675 , G11C11/5607 , G11C15/02 , G11C15/046
Abstract: A MRAM cell including a first tunnel barrier layer between a soft ferromagnetic layer having a free magnetization and a first hard ferromagnetic layer having a first storage magnetization. A second tunnel barrier layer is between the soft ferromagnetic layer and a second hard ferromagnetic layer and has a second storage magnetization. The first storage magnetization is freely orientable at a first high predetermined temperature threshold and the second storage magnetization being freely orientable at a second predetermined high temperature threshold. The first high predetermined temperature threshold is higher than the second predetermined high temperature threshold. The MRAM cell can be used as a ternary content addressable memory (TCAM) and store up to three distinct state levels. The MRAM cell has a reduced size and can be made at low cost.
Abstract translation: MRAM单元包括具有自由磁化的软铁磁层和具有第一存储磁化的第一硬铁磁层之间的第一隧道势垒层。 第二隧道势垒层位于软铁磁层和第二硬铁磁层之间，并具有第二存储磁化。 第一存储磁化可以在第一高预定温度阈值自由定向，并且第二存储磁化可以在第二预定高温阈值自由定向。 第一高预定温度阈值高于第二预定高温阈值。 MRAM单元可用作三元内容可寻址存储器（TCAM），并存储多达三个不同的状态级别。 MRAM电池具有减小的尺寸并且可以以低成本制造。
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2.发明申请MAGNETIC RANDOM ACCESS MEMORY CELL WITH A DUAL JUNCTION FOR TERNARY CONTENT ADDRESSABLE MEMORY APPLICATIONS 有权用于三次内部可寻址存储器应用的双连接的磁性随机存取存储器单元公开(公告)号：US20160322092A1
公开(公告)日：2016-11-03
申请号：US15190499
申请日：2016-06-23
Applicant: Crocus Technology SA
Inventor： Bertrand Cambou
CPC classification number: G11C11/161 , G11C11/1673 , G11C11/1675 , G11C11/5607 , G11C15/02 , G11C15/046
Abstract: A MRAM cell including a first tunnel barrier layer between a soft ferromagnetic layer having a free magnetization and a first hard ferromagnetic layer having a first storage magnetization. A second tunnel barrier layer is between the soft ferromagnetic layer and a second hard ferromagnetic layer and has a second storage magnetization. The first storage magnetization is freely orientable at a first high predetermined temperature threshold and the second storage magnetization being freely orientable at a second predetermined high temperature threshold. The first high predetermined temperature threshold is higher than the second predetermined high temperature threshold. The MRAM cell can be used as a ternary content addressable memory (TCAM) and store up to three distinct state levels. The MRAM cell has a reduced size and can be made at low cost.
Abstract translation: MRAM单元包括具有自由磁化的软铁磁层和具有第一存储磁化的第一硬铁磁层之间的第一隧道势垒层。 第二隧道势垒层位于软铁磁层和第二硬铁磁层之间，并具有第二存储磁化。 第一存储磁化可以在第一高预定温度阈值自由定向，并且第二存储磁化可以在第二预定高温阈值自由定向。 第一高预定温度阈值高于第二预定高温阈值。 MRAM单元可用作三元内容可寻址存储器（TCAM），并存储多达三个不同的状态级别。 MRAM电池具有减小的尺寸并且可以以低成本制造。
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3.发明申请MAGNETIC LOGIC UNIT (MLU) CELL AND AMPLIFIER HAVING A LINEAR MAGNETIC SIGNAL 有权具有线性磁信号的磁性逻辑单元（MLU）单元和放大器公开(公告)号：US20150228888A1
公开(公告)日：2015-08-13
申请号：US14431125
申请日：2013-09-12
Applicant: CROCUS TECHNOLOGY SA
Inventor： Ioan Lucian Prejbeanu , Bernard Dieny , Kenneth MacKay , Bertrand Cambou
CPC classification number: H01L43/02 , G11C11/16 , G11C11/1675 , H03F15/00 , H03K19/18
Abstract: A magnetic logic unit (MLU) cell includes a first magnetic tunnel junction and a second magnetic tunnel junction, each magnetic tunnel junction including a first magnetic layer having a first magnetization, a second magnetic layer having a second magnetization, and a tunnel barrier layer between the first and second layer. A field line for passing a field current such as to generate an external magnetic field is adapted to switch the first magnetization. The first magnetic layer is arranged such that the magnetic tunnel junction magnetization varies linearly with the generated external magnetic field. An MLU amplifier includes a plurality of the MLU cells. The MLU amplifier has large gains, extended cut off frequencies and improved linearity.
Abstract translation: 磁逻辑单元（MLU）单元包括第一磁性隧道结和第二磁性隧道结，每个磁性隧道结包括具有第一磁化的第一磁性层，具有第二磁化的第二磁性层，和 第一层和第二层。 用于传递场电流（例如产生外部磁场）的场线适于切换第一磁化。 第一磁性层布置成使得磁性隧道结磁化随所产生的外部磁场线性变化。 MLU放大器包括多个MLU单元。 MLU放大器具有很大的增益，延长了截止频率，提高了线性度。
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公开(公告)号：US20140126283A1
公开(公告)日：2014-05-08
申请号：US14154405
申请日：2014-01-14
Applicant: Crocus Technology SA
Inventor： Bertrand Cambou
IPC: G11C11/16
CPC classification number: G11C11/1675 , G11C11/16 , G11C11/5607 , Y10S977/933 , Y10S977/935
Abstract: The present disclosure concerns a multilevel magnetic element comprising a first tunnel barrier layer between a soft ferromagnetic layer having a magnetization that can be freely aligned and a first hard ferromagnetic layer having a magnetization that is fixed at a first high temperature threshold and freely alignable at a first low temperature threshold. The magnetic element further comprises a second tunnel barrier layer and a second hard ferromagnetic layer having a magnetization that is fixed at a second high temperature threshold and freely alignable at a first low temperature threshold; the soft ferromagnetic layer being comprised between the first and second tunnel barrier layers. The magnetic element disclosed herein allows for writing four distinct levels using only a single current line.
Abstract translation: 本公开涉及一种多电平磁性元件，其包括在具有可自由对准的磁化的软铁磁层之间的第一隧道势垒层和具有固定在第一高温阈值的磁化的第一硬铁磁层，并且可在 第一低温阈值。 磁性元件还包括第二隧道势垒层和具有固定在第二高温阈值并且可在第一低温阈值自由对准的磁化的第二硬铁磁层; 软铁磁层包括在第一和第二隧道势垒层之间。 这里公开的磁性元件允许仅使用单个电流线来写入四个不同的电平。
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公开(公告)号：US10062833B2
公开(公告)日：2018-08-28
申请号：US15516079
申请日：2015-09-24
Applicant: CROCUS Technology SA
Inventor： Bertrand Cambou
CPC classification number: H01L43/02 , G11C11/161 , G11C11/1673 , H01L27/222 , H01L43/08 , H01L43/10 , H01L43/12
Abstract: A MRAM-based magnetic device including an electrical interconnecting device including: a magnetic tunnel junction; a strap portion electrically connecting a lower end of the magnetic tunnel junction; a current line portion electrically connecting an upper end of the magnetic tunnel junction; an upper metallic stud electrically connecting a lower metallic stud through a via; the strap portion being in direct electrical contact with the via, such that a current passing in the magnetic tunnel junction flows directly between the strap portion and the via and between the via and the lower metallic stud or the upper metallic stud.
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Patent Agency Ranking
6.发明授权Magnetic logic unit (MLU) cell and amplifier having a linear magnetic signal 有权具有线性磁信号的磁逻辑单元（MLU）单元和放大器公开(公告)号：US09324936B2
公开(公告)日：2016-04-26
申请号：US14431140
申请日：2013-09-12
Applicant: CROCUS Technology SA
Inventor： Ioan Lucian Prejbeanu , Bernard Dieny , Kenneth MacKay , Bertrand Cambou
Abstract: A magnetic logic unit (MLU) cell includes a first and second magnetic tunnel junction, each including a first magnetic layer having a first magnetization, a second magnetic layer having a second magnetization, and a barrier layer; and a field line for passing a field current such as to generate an external magnetic field adapted to adjust the first magnetization. The first and second magnetic layers and the barrier layer are arranged such that the first magnetization is magnetically coupled antiparallel with the second magnetization through the barrier layer. The MLU cell also includes a biasing device arranged for applying a static biasing magnetic field oriented substantially parallel to the external magnetic field such as to orient the first magnetization at about 90° relative to the second magnetization, the first and second magnetizations being oriented symmetrically relative to the direction of the external magnetic field.
Abstract translation: 磁逻辑单元（MLU）单元包括第一和第二磁性隧道结，每个包括具有第一磁化的第一磁性层，具有第二磁化的第二磁性层和阻挡层; 以及用于通过场电流的场线，以产生适于调整第一磁化的外部磁场。 第一和第二磁性层和阻挡层被布置成使得第一磁化与通过阻挡层的第二磁化反平行地磁耦合。 MLU单元还包括偏置装置，其被布置成施加基本上平行于外部磁场定向的静态偏置磁场，以便相对于第二磁化将第一磁化定向成约90°，第一和第二磁化定向对称相对 到外部磁场的方向。
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7.发明申请MAGNETIC LOGIC UNIT (MLU) CELL AND AMPLIFIER HAVING A LINEAR MAGNETIC SIGNAL 有权具有线性磁信号的磁性逻辑单元（MLU）单元和放大器公开(公告)号：US20150270479A1
公开(公告)日：2015-09-24
申请号：US14431140
申请日：2013-09-12
Applicant: CROCUS TECHNOLOGY SA
Inventor： Ioan Lucian Prejbeanu , Bernard Dieny , Kenneth MacKay , Bertrand Cambou
Abstract: A magnetic logic unit (MLU) cell includes a first and second magnetic tunnel junction, each including a first magnetic layer having a first magnetization, a second magnetic layer having a second magnetization, and a barrier layer; and a field line for passing a field current such as to generate an external magnetic field adapted to adjust the first magnetization. The first and second magnetic layers and the barrier layer are arranged such that the first magnetization is magnetically coupled antiparallel with the second magnetization through the barrier layer. The MLU cell also includes a biasing device arranged for applying a static biasing magnetic field oriented substantially parallel to the external magnetic field such as to orient the first magnetization at about 90° relative to the second magnetization, the first and second magnetizations being oriented symmetrically relative to the direction of the external magnetic field.
Abstract translation: 磁逻辑单元（MLU）单元包括第一和第二磁性隧道结，每个包括具有第一磁化的第一磁性层，具有第二磁化的第二磁性层和阻挡层; 以及用于通过场电流的场线，以产生适于调整第一磁化的外部磁场。 第一和第二磁性层和阻挡层被布置成使得第一磁化与通过阻挡层的第二磁化反平行地磁耦合。 MLU单元还包括偏置装置，其被布置成施加基本上平行于外部磁场定向的静态偏置磁场，以便相对于第二磁化将第一磁化定向成约90°，第一和第二磁化定向对称相对 到外部磁场的方向。
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8.发明授权Magnetic random access memory cell with a dual junction for ternary content addressable memory applications 有权具有用于三元内容可寻址存储器应用的双结的磁性随机存取存储器单元公开(公告)号：US09401208B2
公开(公告)日：2016-07-26
申请号：US14665459
申请日：2015-03-23
Applicant: Crocus Technology SA
Inventor： Bertrand Cambou
CPC classification number: G11C11/161 , G11C11/1673 , G11C11/1675 , G11C11/5607 , G11C15/02 , G11C15/046
Abstract: An MRAM cell including a first tunnel barrier layer between a soft ferromagnetic layer having a free magnetization and a first hard ferromagnetic layer having a first storage magnetization; a second tunnel barrier layer between the soft ferromagnetic layer and a second hard ferromagnetic layer having a second storage magnetization; the first storage magnetization being freely orientable at a first high predetermined temperature threshold and the second storage magnetization being freely orientable at a second predetermined high temperature threshold; the first high predetermined temperature threshold being higher than the second predetermined high temperature threshold. The MRAM cell can be used as a ternary content addressable memory (TCAM) and store up to three distinct state levels. The MRAM cell has a reduced size and can be made at low cost.
Abstract translation: MRAM单元包括具有自由磁化的软铁磁层和具有第一存储磁化的第一硬铁磁层之间的第一隧道势垒层; 所述软铁磁层与具有第二存储磁化的第二硬铁磁层之间的第二隧道势垒层; 所述第一存储磁化可在第一高预定温度阈值自由定向，并且所述第二存储磁化可自由地定向在第二预定高温阈值; 第一高预定温度阈值高于第二预定高温阈值。 MRAM单元可用作三元内容可寻址存储器（TCAM），并存储多达三个不同的状态级别。 MRAM电池具有减小的尺寸并且可以以低成本制造。
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公开(公告)号：US08947921B2
公开(公告)日：2015-02-03
申请号：US14154405
申请日：2014-01-14
Applicant: Crocus Technology SA
Inventor： Bertrand Cambou
CPC classification number: G11C11/1675 , G11C11/16 , G11C11/5607 , Y10S977/933 , Y10S977/935
Abstract: The present disclosure concerns a multilevel magnetic element comprising a first tunnel barrier layer between a soft ferromagnetic layer having a magnetization that can be freely aligned and a first hard ferromagnetic layer having a magnetization that is fixed at a first high temperature threshold and freely alignable at a first low temperature threshold. The magnetic element further comprises a second tunnel barrier layer and a second hard ferromagnetic layer having a magnetization that is fixed at a second high temperature threshold and freely alignable at a first low temperature threshold; the soft ferromagnetic layer being comprised between the first and second tunnel barrier layers. The magnetic element disclosed herein allows for writing four distinct levels using only a single current line.
Abstract translation: 本公开涉及一种多电平磁性元件，其包括在具有可自由对准的磁化的软铁磁层之间的第一隧道势垒层和具有固定在第一高温阈值的磁化的第一硬铁磁层，并且可在 第一低温阈值。 磁性元件还包括第二隧道势垒层和具有固定在第二高温阈值并且可在第一低温阈值自由对准的磁化的第二硬铁磁层; 软铁磁层包括在第一和第二隧道势垒层之间。 这里公开的磁性元件允许仅使用单个电流线来写入四个不同的电平。
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公开(公告)号：US20170309812A1
公开(公告)日：2017-10-26
申请号：US15516079
申请日：2015-09-24
Applicant: CROCUS Technology SA
Inventor： Bertrand Cambou
CPC classification number: H01L43/02 , G11C11/161 , G11C11/1673 , H01L27/222 , H01L43/08 , H01L43/10 , H01L43/12
Abstract: A MRAM-based magnetic device including an electrical interconnecting device including: a magnetic tunnel junction; a strap portion electrically connecting a lower end of the magnetic tunnel junction; a current line portion electrically connecting an upper end of the magnetic tunnel junction; an upper metallic stud electrically connecting a lower metallic stud through a via; the strap portion being in direct electrical contact with the via, such that a current passing in the magnetic tunnel junction flows directly between the strap portion and the via and between the via and the lower metallic stud or the upper metallic stud.
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