Invention Application
- Patent Title: ETCHING METHOD AND ETCHING APPARATUS
- Patent Title (中): 蚀刻方法和蚀刻装置
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Application No.: US15133314Application Date: 2016-04-20
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Publication No.: US20160322230A1Publication Date: 2016-11-03
- Inventor: Gaku SHIMODA , Hotaka MARUYAMA , Takanori SATO , Masafumi URAKAWA , Masahiro OGASAWARA
- Applicant: Tokyo Electron Limited
- Priority: JP2015-093509 20150430; JP2015-140232 20150714
- Main IPC: H01L21/3065
- IPC: H01L21/3065 ; H01J37/32 ; H01L21/67
Abstract:
A method for etching a silicon film formed on a substrate includes supplying HBr gas, NF3 gas, and O2 gas into a chamber and performing a plurality of etching processes on the silicon film with a plasma generated by the supplied HBr gas, NF3 gas, and O2 gas, gradually reducing a flow rate of the HBr gas during the plurality of etching processes, and adjusting a flow rate of the O2 gas according to the reduction of the HBr gas.
Public/Granted literature
- US09865471B2 Etching method and etching apparatus Public/Granted day:2018-01-09
Information query
IPC分类:
