公开(公告)号：US20220137603A1

公开(公告)日：2022-05-05

申请号：US17517253

申请日：2021-11-02

Applicant: TOKYO ELECTRON LIMITED

Inventor： Masafumi URAKAWA

IPC: G05B19/418

Abstract: A recipe updating method of a plasma processing apparatus includes: performing a plasma processing on a substrate mounted on a stage using a first recipe including an application timing of a radio-frequency power for plasma generation; measuring a reference timing at which a temperature of the stage drops to a minimum value and a first maximum value of the temperature of the stage in association with the first recipe; performing the plasma processing on the substrate using a second recipe obtained by changing the application timing of the first recipe to the reference timing; measuring a second maximum value of the temperature of the stage in association with the second recipe; and updating the first recipe to the second recipe when the second maximum value is smaller than the first maximum value.

公开(公告)号：US20150056808A1

公开(公告)日：2015-02-26

申请号：US14462658

申请日：2014-08-19

Applicant: TOKYO ELECTRON LIMITED

Inventor： Masahiro OGASAWARA ,  Masafumi URAKAWA ,  Yoshinobu HAYAKAWA ,  Kazuhiro KUBOTA ,  Hikaru WATANABE

IPC: H01L21/308 ,  H01L21/3065

CPC classification number: H01L21/31144 ,  H01J37/32091 ,  H01L21/31116 ,  H01L21/32136 ,  H01L21/32137 ,  H01L21/76802

Abstract: Provided is a method of etching a silicon oxide film. The method includes exposing a workpiece including the silicon oxide film and a mask formed on the silicon oxide film to plasma of a processing gas to etch the silicon oxide film. The mask includes a first film formed on the silicon oxide film and a second film formed on the first film, and the second film is constituted by a film having an etching rate lower than that of the first film with respect to active species in the plasma.

Abstract translation: 提供了蚀刻氧化硅膜的方法。 该方法包括将包括氧化硅膜的工件和形成在氧化硅膜上的掩模暴露于处理气体的等离子体以蚀刻氧化硅膜。 掩模包括形成在氧化硅膜上的第一膜和形成在第一膜上的第二膜，并且第二膜由相对于等离子体中的活性种类具有比第一膜低的蚀刻速率的膜构成 。

公开(公告)号：US20230386798A1

公开(公告)日：2023-11-30

申请号：US18199401

申请日：2023-05-19

Applicant: Tokyo Electron Limited

Inventor： Mohd Fairuz BIN BUDIMAN ,  Shinya MORIKITA ,  Masafumi URAKAWA

IPC: H01J37/32

CPC classification number: H01J37/32642 ,  H01J37/32715 ,  H01J37/3244

Abstract: There is provided a substrate processing apparatus comprising: a plasma processing chamber; a support accommodated in the plasma processing chamber; an inner edge ring provided around a substrate; an outer edge ring provided around the inner edge ring, the outer edge ring having an inner peripheral portion overlapping an outer peripheral portion of the inner edge ring when viewed from above and having a first alignment portion; an outer edge ring electrostatic chuck disposed at a position of the support, the position facing the outer edge ring; and a lifter configured to move the inner edge ring and/or the outer edge ring up and down. The inner edge ring is configured to be aligned with the outer edge ring by the first alignment portion in a state in which the outer edge ring electrostatic chuck is driven and the outer edge ring is attracted.

公开(公告)号：US20180350567A1

公开(公告)日：2018-12-06

申请号：US15989324

申请日：2018-05-25

Applicant: Tokyo Electron Limited

Inventor： Yuki SUGAWARA ,  Masanori ASAHARA ,  Masafumi URAKAWA

IPC: H01J37/32

Abstract: There is provision of a member used in a plasma processing apparatus configured to generate plasma from a gas in a processing vessel and to process a substrate disposed on a mounting base in the processing vessel using the plasma. The member includes a surface exposed to the plasma in the processing vessel in a state installed in the processing vessel, and a coating layer including cobalt which covers a part of the surface.

公开(公告)号：US20160322230A1

公开(公告)日：2016-11-03

申请号：US15133314

申请日：2016-04-20

Applicant: Tokyo Electron Limited

Inventor： Gaku SHIMODA ,  Hotaka MARUYAMA ,  Takanori SATO ,  Masafumi URAKAWA ,  Masahiro OGASAWARA

IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/67

CPC classification number: H01L21/3065 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/32449 ,  H01J37/32724 ,  H01J2237/334 ,  H01J2237/3345 ,  H01J2237/3348 ,  H01L21/67109

Abstract: A method for etching a silicon film formed on a substrate includes supplying HBr gas, NF3 gas, and O2 gas into a chamber and performing a plurality of etching processes on the silicon film with a plasma generated by the supplied HBr gas, NF3 gas, and O2 gas, gradually reducing a flow rate of the HBr gas during the plurality of etching processes, and adjusting a flow rate of the O2 gas according to the reduction of the HBr gas.

Abstract translation: 用于蚀刻形成在基板上的硅膜的方法包括将HBr气体，NF 3气体和O 2气体供应到室中，并且利用所提供的HBr气体，NF3气体产生的等离子体对硅膜进行多次蚀刻处理， O2气体，在多次蚀刻工序中逐渐降低HBr气体的流量，根据HBr气体的还原来调节O 2气体的流量。

公开(公告)号：US20240162047A1

公开(公告)日：2024-05-16

申请号：US18422013

申请日：2024-01-25

Applicant: Tokyo Electron Limited

Inventor： Takahiro YOKOYAMA ,  Masafumi URAKAWA ,  Yuki CHIBA

IPC: H01L21/311 ,  H01J37/32 ,  H01L21/033

CPC classification number: H01L21/31144 ,  H01J37/32091 ,  H01J37/32449 ,  H01J37/32926 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/31116 ,  H01J2237/3346

Abstract: An etching method includes providing a substrate including an etching target layer including a silicon-containing layer, and a mask located on the etching target layer, comprising a metal, and having an opening defined by a side wall of the mask, supplying a process gas including a metal-containing gas, and etching, with plasma generated from the process gas, the etching target layer through the opening while forming a protective layer comprising a metal on a top of the mask and on the side wall of the mask.

公开(公告)号：US20160247666A1

公开(公告)日：2016-08-25

申请号：US15018981

申请日：2016-02-09

Applicant: Tokyo Electron Limited

Inventor： Masafumi URAKAWA ,  Koichi NAGAMI

IPC: H01J37/32

CPC classification number: H01J37/32146 ,  H01J37/32174 ,  H01J37/32568 ,  H01J37/32715

Abstract: A plasma processing method includes applying a pulse wave of high frequency electric power for plasma generation and a pulse wave of high frequency electric power for bias whose frequency is lower than that of the high frequency electric power for plasma generation on the mounting table; and controlling the pulse wave of the high frequency electric power for plasma generation and the pulse wave of the high frequency electric power for bias such that a predetermined phase difference is generated between the pulse wave of the high frequency electric power for plasma generation and the pulse wave of the high frequency electric power for bias, and a duty ratio of the high frequency electric power for plasma generation becomes greater than or equal to a duty ratio of the high frequency electric power for bias.

Abstract translation: 一种等离子体处理方法，包括对等离子体产生用的高频电力脉冲波和频率低于用于等离子体产生的高频电力的偏压的高频电力脉冲波施加在安装台上; 并且控制用于等离子体产生的高频电力的脉冲波和用于偏置的高频电力的脉搏波，使得在用于等离子体产生的高频电力的脉冲波和脉冲之间产生预定的相位差 用于偏置的高频电力的波形和用于等离子体产生的高频电力的占空比变得大于或等于用于偏置的高频电力的占空比。

公开(公告)号：US20150132967A1

公开(公告)日：2015-05-14

申请号：US14529241

申请日：2014-10-31

Applicant: Tokyo Electron Limited

Inventor： Masafumi URAKAWA ,  Rui TAKAHASHI ,  Masahiro OGASAWARA

IPC: H01L21/3065 ,  H01L21/683 ,  H01L21/67 ,  H01J37/32

CPC classification number: H01L21/3065 ,  H01J37/32091 ,  H01J37/32715 ,  H01L21/67109 ,  H01L21/6831

Abstract: A method of processing a substrate using a substrate processing apparatus that has an electrostatic chuck including an insulating member inside which an electrode is included and provides a plasma process to a substrate mounted on the electrostatic chuck includes a first process of supplying a heat transfer gas having a second gas pressure to a back surface of the substrate while eliminating electric charges in the substrate using plasma of a process gas having a first gas pressure.

Abstract translation: 一种使用具有静电卡盘的基板处理装置的基板处理装置的方法，所述基板处理装置包括绝缘构件，所述绝缘构件包括电极并且向安装在所述静电卡盘上的基板提供等离子体处理，所述第一工序提供具有 使用具有第一气体压力的处理气体的等离子体消除基板中的电荷的第二气体压力到基板的背面。

公开(公告)号：US20140235062A1

公开(公告)日：2014-08-21

申请号：US14182707

申请日：2014-02-18

Applicant: TOKYO ELECTRON LIMITED

Inventor： Masafumi URAKAWA

IPC: H01L21/3065

CPC classification number: H01L21/31116 ,  H01J37/32091 ,  H01J37/32165 ,  H01L21/32137

Abstract: Disclosed is a plasma processing method which includes a gas supplying process, a power supplying process, and an etching process. In the gas supplying process, a processing gas is supplied into a processing container in which an object to be processed is disposed. In the power supplying process, a plasma generating power of a frequency ranging from about 100 MHz to about 150 MHz as a power for generating plasma of the processing gas supplied into the processing container, and a biasing power which is a power having a frequency lower than that of the plasma generating power are supplied. In the etching process, the object to be processed is etched by the plasma of the processing gas while the biasing power is pulse-modulated so that the duty ratio ranges from about 10% to about 70% and the frequency ranges from about 5 kHz to about 20 kHz.

Abstract translation: 公开了一种等离子体处理方法，其包括气体供给处理，供电处理和蚀刻处理。 在供气过程中，处理气体被供给到处理容器中，处理容器中设置有被处理物体。 在供电过程中，作为用于产生供应到处理容器中的处理气体的等离子体的功率的等离子体发生功率，其频率范围为约100MHz至约150MHz，并且具有频率较低的功率的偏置功率 提供等离子体发生功率。 在蚀刻工艺中，通过处理气体的等离子体蚀刻被处理物体，同时对偏压功率进行脉冲调制，使得占空比范围为约10％至约70％，频率范围为约5kHz至 约20 kHz。