Invention Application
US20160322360A1 FLOATING BODY MEMORY CELL HAVING GATES FAVORING DIFFERENT CONDUCTIVITY TYPE REGIONS
审中-公开
具有不同电导率类型区域的浮动体内存单元
- Patent Title: FLOATING BODY MEMORY CELL HAVING GATES FAVORING DIFFERENT CONDUCTIVITY TYPE REGIONS
- Patent Title (中): 具有不同电导率类型区域的浮动体内存单元
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Application No.: US15209622Application Date: 2016-07-13
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Publication No.: US20160322360A1Publication Date: 2016-11-03
- Inventor: Peter L. D. Chang , Uygar E. Avci , David Kencke , Ibrahim Ban
- Applicant: Peter L. D. Chang , Uygar E. Avci , David Kencke , Ibrahim Ban
- Main IPC: H01L27/092
- IPC: H01L27/092 ; H01L27/12 ; H01L29/06 ; H01L29/66 ; H01L29/51 ; H01L29/78 ; H01L21/8238 ; H01L27/108 ; H01L29/49
Abstract:
A method for fabricating floating body memory cells (FBCs), and the resultant FBCs where gates favoring different conductivity type regions are used is described. In one embodiment, a p type back gate with a thicker insulation is used with a thinner insulated n type front gate. Processing, which compensates for misalignment, which alloys the different oxide and gate materials to he fabricated is described.
Public/Granted literature
- US09520399B2 Floating body memory cell having gates favoring different conductivity type regions Public/Granted day:2016-12-13
Information query
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