Invention Application
- Patent Title: SEMICONDUCTOR PACKAGE WITH HIGH DENSITY DIE TO DIE CONNECTION AND METHOD OF MAKING THE SAME
- Patent Title (中): 具有高密度DIE连接的半导体封装及其制造方法
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Application No.: US14844185Application Date: 2015-09-03
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Publication No.: US20160329284A1Publication Date: 2016-11-10
- Inventor: Hong Bok WE , Dong Wook KIM , Jae Sik LEE
- Applicant: QUALCOMM Incorporated
- Main IPC: H01L23/538
- IPC: H01L23/538 ; H01L25/065 ; H01L21/56 ; H01L25/00 ; H01L21/768 ; H01L21/683 ; H01L23/00 ; H01L23/31

Abstract:
A semiconductor package according to some examples of the disclosure may include a substrate having a bridge embedded in the substrate, a first and second die coupled to the substrate, and a plurality of electrically conductive bridge interconnects in the substrate coupling the bridge to the first and second die. The plurality of electrically conductive bridge interconnects may have a first bridge contact layer directly coupled to the bridge, a first solder layer on the first bridge contact layer, a second bridge contact layer on the first solder layer, a second solder layer on the second bridge contact layer, and a die contact directly coupled to one of the first and second die where the plurality of electrically conductive bridge interconnects are embedded in the substrate.
Public/Granted literature
- US09595494B2 Semiconductor package with high density die to die connection and method of making the same Public/Granted day:2017-03-14
Information query
IPC分类: