Invention Application
US20160344353A1 RF AMPLIFIER OUTPUT CIRCUIT DEVICE WITH INTEGRATED CURRENT PATH, AND METHODS OF MANUFACTURE THEREOF
审中-公开
具有集成电流路径的射频放大器输出电路装置及其制造方法
- Patent Title: RF AMPLIFIER OUTPUT CIRCUIT DEVICE WITH INTEGRATED CURRENT PATH, AND METHODS OF MANUFACTURE THEREOF
- Patent Title (中): 具有集成电流路径的射频放大器输出电路装置及其制造方法
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Application No.: US14919990Application Date: 2015-10-22
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Publication No.: US20160344353A1Publication Date: 2016-11-24
- Inventor: MICHAEL E. WATTS , JEFFREY K. JONES , NING ZHU , IOURI VOLOKHINE
- Applicant: FREESCALE SEMICONDUCTOR, INC.
- Priority: IBPCT/IB2015/000963 20150522
- Main IPC: H03F1/56
- IPC: H03F1/56 ; H01G4/12 ; H01G4/005 ; H03F3/213 ; H05K1/11 ; H01G4/38 ; H01F27/28 ; H03F3/195 ; H01G4/30 ; H03H7/38

Abstract:
A device includes multiple ceramic capacitors and a current path structure. A first ceramic capacitor includes a first ceramic material between first and second electrodes. A second ceramic capacitor includes a second ceramic material between third and fourth electrodes. The second ceramic material has a higher Q than the first ceramic material. The current path structure includes a lateral conductor located between the first and second ceramic materials, and first and second vertical conductors that extend from first and second ends of the lateral conductor to a device surface. The device may be coupled to a substrate of a packaged RF amplifier device, which also includes a transistor. For example, the device may form a portion of an output impedance matching circuit coupled between a current carrying terminal of the transistor and an output lead of the RF amplifier device.
Public/Granted literature
- US10432152B2 RF amplifier output circuit device with integrated current path, and methods of manufacture thereof Public/Granted day:2019-10-01
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