公开(公告)号：US20170117856A1

公开(公告)日：2017-04-27

申请号：US14919511

申请日：2015-10-21

Applicant: FREESCALE SEMICONDUCTOR, INC.

Inventor： NING ZHU ,  DAMON G. HOLMES ,  JEFFREY K. JONES

IPC: H03F1/56 ,  H03F3/19

CPC classification number: H03F1/565 ,  H01L23/66 ,  H01L2223/6655 ,  H01L2224/48091 ,  H01L2224/49175 ,  H03F3/19 ,  H03F3/195 ,  H03F2200/108 ,  H03F2200/181 ,  H03F2200/216 ,  H03F2200/222 ,  H03F2200/225 ,  H03F2200/297 ,  H03F2200/301 ,  H03F2200/309 ,  H03F2200/387 ,  H03F2200/391 ,  H03F2200/402 ,  H03F2200/451 ,  H03F2200/552 ,  H03F2200/75 ,  H01L2924/00014

Abstract: Embodiments of RF amplifiers and packaged RF amplifier devices each include a transistor, an impedance matching circuit, and a video bandwidth circuit. The impedance matching circuit is coupled between the transistor and an RF I/O (e.g., an input or output lead). The video bandwidth circuit is coupled between a connection node of the impedance matching circuit and a ground reference node. The video bandwidth circuit includes a plurality of components, which includes an envelope inductor and an envelope capacitor coupled in series between the connection node and the ground reference node. The video bandwidth circuit further includes a first bypass capacitor coupled in parallel across one or more of the plurality of components of the video bandwidth circuit.

公开(公告)号：US20160344353A1

公开(公告)日：2016-11-24

申请号：US14919990

申请日：2015-10-22

Applicant: FREESCALE SEMICONDUCTOR, INC.

Inventor： MICHAEL E. WATTS ,  JEFFREY K. JONES ,  NING ZHU ,  IOURI VOLOKHINE

IPC: H03F1/56 ,  H01G4/12 ,  H01G4/005 ,  H03F3/213 ,  H05K1/11 ,  H01G4/38 ,  H01F27/28 ,  H03F3/195 ,  H01G4/30 ,  H03H7/38

CPC classification number: H03F1/565 ,  H01F27/2804 ,  H01F2027/2809 ,  H01G4/005 ,  H01G4/12 ,  H01G4/30 ,  H01G4/38 ,  H01G4/385 ,  H01G4/40 ,  H01L23/66 ,  H01L24/00 ,  H01L24/49 ,  H01L2223/6611 ,  H01L2223/6655 ,  H01L2223/6661 ,  H01L2224/05553 ,  H01L2224/48091 ,  H01L2224/4811 ,  H01L2224/48137 ,  H01L2224/49175 ,  H01L2924/00014 ,  H01L2924/00015 ,  H03F3/195 ,  H03F3/213 ,  H03F2200/222 ,  H03F2200/451 ,  H03H7/38 ,  H05K1/111 ,  H05K2201/10015 ,  H05K2201/10022 ,  H05K2201/1003 ,  H05K2201/10166 ,  H01L2224/45099

Abstract: A device includes multiple ceramic capacitors and a current path structure. A first ceramic capacitor includes a first ceramic material between first and second electrodes. A second ceramic capacitor includes a second ceramic material between third and fourth electrodes. The second ceramic material has a higher Q than the first ceramic material. The current path structure includes a lateral conductor located between the first and second ceramic materials, and first and second vertical conductors that extend from first and second ends of the lateral conductor to a device surface. The device may be coupled to a substrate of a packaged RF amplifier device, which also includes a transistor. For example, the device may form a portion of an output impedance matching circuit coupled between a current carrying terminal of the transistor and an output lead of the RF amplifier device.

Abstract translation: 器件包括多个陶瓷电容器和电流通路结构。 第一陶瓷电容器包括在第一和第二电极之间的第一陶瓷材料。 第二陶瓷电容器包括在第三和第四电极之间的第二陶瓷材料。 第二陶瓷材料具有比第一陶瓷材料更高的Q值。 电流路径结构包括位于第一和第二陶瓷材料之间的横向导体，以及从侧导体的第一端和第二端延伸到器件表面的第一和第二垂直导体。 该器件可以耦合到封装的RF放大器器件的衬底，该器件还包括晶体管。 例如，器件可以形成耦合在晶体管的载流端子和RF放大器器件的输出引线之间的输出阻抗匹配电路的一部分。