Invention Application
US20160351697A1 SEMICONDUCTOR MODULE WITH TWO AUXILIARY EMITTER CONDUCTOR PATHS
审中-公开
具有两个辅助发射器导体电路的半导体模块
- Patent Title: SEMICONDUCTOR MODULE WITH TWO AUXILIARY EMITTER CONDUCTOR PATHS
- Patent Title (中): 具有两个辅助发射器导体电路的半导体模块
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Application No.: US15237058Application Date: 2016-08-15
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Publication No.: US20160351697A1Publication Date: 2016-12-01
- Inventor: Samuel Hartmann , Didier Cottet , Slavo Kicin
- Applicant: ABB Schweiz AG
- Priority: EP14155208.3 20140214
- Main IPC: H01L29/739
- IPC: H01L29/739 ; H01L29/423 ; H01L23/00 ; H03K17/081 ; H01L23/02 ; H01L27/088 ; H01L25/07 ; H01L29/417 ; H01L23/64
Abstract:
A semiconductor module comprises a semiconductor chip comprising a semiconductor switch having a collector, emitter and gate, a collector terminal connected to the collector, gate terminal connected to the gate, an emitter terminal connected to the emitter via an emitter conductor path having an emitter inductance, an auxiliary emitter terminal connected to the emitter, a first conductor path connected to the emitter, and a second conductor path connected to the emitter having a different mutually inductive coupling with the emitter conductor path as the first conductor path. The first conductor path and the second conductor path are connectable to the auxiliary emitter terminal and/or the first conductor path is connected to the auxiliary emitter terminal and the second conductor path is connected to a second auxiliary emitter terminal. The semiconductor switch is an IGBT and each of the first conductor path and the second conductor path comprises bridging points for connecting the respective conductor path to the auxiliary emitter terminal.
Public/Granted literature
- US10224424B2 Semiconductor module with two auxiliary emitter conductor paths Public/Granted day:2019-03-05
Information query
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