Invention Application
- Patent Title: SEMICONDUCTOR DEVICE
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Application No.: US15174293Application Date: 2016-06-06
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Publication No.: US20160358977A1Publication Date: 2016-12-08
- Inventor: Shunpei YAMAZAKI , Hiroko ABE , Yukie NEMOTO , Ryoji NOMURA , Mikio YUKAWA
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Priority: JP2004-328295 20041111; JP2004-328298 20041111
- Main IPC: H01L27/24
- IPC: H01L27/24 ; H01L23/66 ; H01L27/28 ; H01L45/00 ; H01L51/00

Abstract:
The invention provides a semiconductor device which is non-volatile, easily manufactured, and can be additionally written. A semiconductor device of the invention includes a plurality of transistors, a conductive layer which functions as a source wiring or a drain wiring of the transistors, and a memory element which overlaps one of the plurality of transistors, and a conductive layer which functions as an antenna. The memory element includes a first conductive layer, an organic compound layer and a phase change layer, and a second conductive layer stacked in this order. The conductive layer which functions as an antenna and a conductive layer which functions as a source wiring or a drain wiring of the plurality of transistors are provided on the same layer.
Public/Granted literature
- US09997568B2 Semiconductor device Public/Granted day:2018-06-12
Information query
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