公开(公告)号：US20140121372A1

公开(公告)日：2014-05-01

申请号：US14062102

申请日：2013-10-24

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hideko INOUE ,  Satoshi SEO ,  Satoko SHITAGAKI ,  Hiroko ABE

IPC: H01L51/00

CPC classification number: H01L51/0085 ,  C07F15/0033 ,  C09K11/06 ,  C09K2211/1044 ,  C09K2211/185 ,  H01L51/5016 ,  H05B33/14

Abstract: An organometallic complex according to the present invention comprises a structure represented by the following general formula (1). In the formula, R1 to R5 are any one selected from the group consisting of hydrogen, a halogen element, an acyl group, an alkyl group, an alkoxy group, an aryl group, a cyano group, and a heterocyclic group, Ar is an aryl group having an electron-withdrawing group or a heterocyclic group having electron-drawing group, and M is an element of Group 9 or an element of Group 10.

Abstract translation: 根据本发明的有机金属络合物包含由以下通式（1）表示的结构。 在该式中，R 1至R 5为选自氢，卤素元素，酰基，烷基，烷氧基，芳基，氰基和杂环基中的任何一个，Ar为 具有吸电子基团的芳基或具有电子吸引基团的杂环基，M是第9族元素或第10族元素。

公开(公告)号：US20180108855A1

公开(公告)日：2018-04-19

申请号：US15802557

申请日：2017-11-03

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hiroko ABE

IPC: H01L51/50 ,  C09K11/02 ,  C09K11/06 ,  H01L51/52 ,  H05B33/14 ,  H01L51/00

CPC classification number: H01L51/504 ,  C09K11/025 ,  C09K11/06 ,  C09K2211/1007 ,  C09K2211/1029 ,  C09K2211/1074 ,  C09K2211/185 ,  H01L51/0052 ,  H01L51/0058 ,  H01L51/0059 ,  H01L51/006 ,  H01L51/0072 ,  H01L51/0077 ,  H01L51/0081 ,  H01L51/0085 ,  H01L51/0087 ,  H01L51/5016 ,  H01L51/5036 ,  H01L51/5206 ,  H01L51/5221 ,  H01L51/5253 ,  H05B33/14 ,  Y02B20/181 ,  Y10S428/917 ,  Y10T428/24942

Abstract: An electroluminescent element which can easily control the balance of color in white emission (white balance) is provided according to the present invention. The electroluminescent element comprises a first light-emitting layer containing one kind or two or more kinds of light-emitting materials, and a second light-emitting layer containing two kinds of light-emitting materials (a host material and a phosphorescent material) in which the phosphorescent material is doped at a concentration of from 10 to 40 wt %, preferably, from 12.5 to 20 wt %. Consequently, blue emission can be obtained from the first light-emitting layer and green and red (or orange) emission can be obtained from the second light-emitting layer. An electroluminescent element having such device configuration can easily control white balance since emission peak intensity changes at the same rate in case of increasing a current density.

公开(公告)号：US20170194587A1

公开(公告)日：2017-07-06

申请号：US15462944

申请日：2017-03-20

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hiroko ABE

IPC: H01L51/50 ,  C09K11/02 ,  C09K11/06 ,  H01L51/52

CPC classification number: H01L51/504 ,  C09K11/025 ,  C09K11/06 ,  C09K2211/1007 ,  C09K2211/1029 ,  C09K2211/1074 ,  C09K2211/185 ,  H01L51/0052 ,  H01L51/0058 ,  H01L51/0059 ,  H01L51/006 ,  H01L51/0072 ,  H01L51/0077 ,  H01L51/0081 ,  H01L51/0085 ,  H01L51/0087 ,  H01L51/5016 ,  H01L51/5036 ,  H01L51/5206 ,  H01L51/5221 ,  H01L51/5253 ,  H05B33/14 ,  Y02B20/181 ,  Y10S428/917 ,  Y10T428/24942

Abstract: An electroluminescent element which can easily control the balance of color in white emission (white balance) is provided according to the present invention. The electroluminescent element comprises a first light-emitting layer containing one kind or two or more kinds of light-emitting materials, and a second light-emitting layer containing two kinds of light-emitting materials (a host material and a phosphorescent material) in which the phosphorescent material is doped at a concentration of from 10 to 40 wt %, preferably, from 12.3 to 20 wt %. Consequently, blue emission can be obtained from the first light-emitting layer and green and red (or orange) emission can be obtained from the second light-emitting layer. An electroluminescent element having such device configuration can easily control white balance since emission peak intensity changes at the same rate in case of increasing a current density.

公开(公告)号：US20160218310A1

公开(公告)日：2016-07-28

申请号：US15090679

申请日：2016-04-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hiroko ABE

IPC: H01L51/50

CPC classification number: H01L51/504 ,  C09K11/025 ,  C09K11/06 ,  C09K2211/1007 ,  C09K2211/1029 ,  C09K2211/1074 ,  C09K2211/185 ,  H01L51/0052 ,  H01L51/0058 ,  H01L51/0059 ,  H01L51/006 ,  H01L51/0072 ,  H01L51/0077 ,  H01L51/0081 ,  H01L51/0085 ,  H01L51/0087 ,  H01L51/5016 ,  H01L51/5036 ,  H01L51/5206 ,  H01L51/5221 ,  H01L51/5253 ,  H05B33/14 ,  Y02B20/181 ,  Y10S428/917 ,  Y10T428/24942

Abstract: An electroluminescent element which can easily control the balance of color in white emission (white balance) is provided according to the present invention. The electroluminescent element comprises a first light-emitting layer containing one kind or two or more kinds of light-emitting materials, and a second light-emitting layer containing two kinds of light-emitting materials (a host material and a phosphorescent material) in which the phosphorescent material is doped at a concentration of from 10 to 40 wt %, preferably, from 12.5 to 20 wt %. Consequently, blue emission can be obtained from the first light-emitting layer and green and red (or orange) emission can be obtained from the second light-emitting layer. An electroluminescent element having such device configuration can easily control white balance since emission peak intensity changes at the same rate in case of increasing a current density.

Abstract translation: 根据本发明提供了可以容易地控制白色发射（白平衡）中的色彩平衡的电致发光元件。 电致发光元件包括含有一种或两种以上发光材料的第一发光层和含有两种发光材料（主体材料和磷光材料）的第二发光层，其中 磷光材料以10至40重量％，优选12.5至20重量％的浓度掺杂。 因此，可以从第一发光层获得蓝色发光，并且可以从第二发光层获得绿色和红色（或橙色）发射。 具有这种器件结构的电致发光元件可以容易地控制白平衡，因为在增大电流密度的情况下发射峰强度以相同的速率变化。

公开(公告)号：US20150144858A1

公开(公告)日：2015-05-28

申请号：US14614961

申请日：2015-02-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Hiroko ABE ,  Yukie NEMOTO ,  Ryoji NOMURA ,  Mikio YUKAWA

IPC: H01L27/24 ,  H01L23/66 ,  H01L27/28 ,  H01L45/00 ,  H01L51/00

CPC classification number: H01L27/2463 ,  B82Y10/00 ,  G11C13/00 ,  G11C13/0004 ,  G11C13/0014 ,  G11C13/0016 ,  G11C13/0069 ,  G11C17/143 ,  G11C17/16 ,  G11C17/18 ,  G11C2013/009 ,  G11C2213/77 ,  G11C2213/79 ,  H01L21/8221 ,  H01L23/66 ,  H01L27/0688 ,  H01L27/1266 ,  H01L27/2409 ,  H01L27/2436 ,  H01L27/283 ,  H01L45/06 ,  H01L45/065 ,  H01L45/1213 ,  H01L45/1233 ,  H01L45/141 ,  H01L45/143 ,  H01L45/144 ,  H01L51/0098 ,  H01L2223/6677 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/12044 ,  H01L2924/00014 ,  H01L2924/00

Abstract: The invention provides a semiconductor device which is non-volatile, easily manufactured, and can be additionally written. A semiconductor device of the invention includes a plurality of transistors, a conductive layer which functions as a source wiring or a drain wiring of the transistors, and a memory element which overlaps one of the plurality of transistors, and a conductive layer which functions as an antenna. The memory element includes a first conductive layer, an organic compound layer and a phase change layer, and a second conductive layer stacked in this order. The conductive layer which functions as an antenna and a conductive layer which functions as a source wiring or a drain wiring of the plurality of transistors are provided on the same layer.

Abstract translation: 本发明提供了一种非易失性，易于制造并且可另外写入的半导体器件。 本发明的半导体器件包括多个晶体管，用作晶体管的源极布线或漏极布线的导电层，以及与多个晶体管之一重叠的存储元件，以及用作 天线。 存储元件包括第一导电层，有机化合物层和相变层，以及依次层叠的第二导电层。 用作天线的导电层和用作多个晶体管的源极布线或漏极布线的导电层设置在同一层上。

公开(公告)号：US20160358977A1

公开(公告)日：2016-12-08

申请号：US15174293

申请日：2016-06-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Hiroko ABE ,  Yukie NEMOTO ,  Ryoji NOMURA ,  Mikio YUKAWA

IPC: H01L27/24 ,  H01L23/66 ,  H01L27/28 ,  H01L45/00 ,  H01L51/00

CPC classification number: H01L27/2463 ,  B82Y10/00 ,  G11C13/00 ,  G11C13/0004 ,  G11C13/0014 ,  G11C13/0016 ,  G11C13/0069 ,  G11C17/143 ,  G11C17/16 ,  G11C17/18 ,  G11C2013/009 ,  G11C2213/77 ,  G11C2213/79 ,  H01L21/8221 ,  H01L23/66 ,  H01L27/0688 ,  H01L27/1266 ,  H01L27/2409 ,  H01L27/2436 ,  H01L27/283 ,  H01L45/06 ,  H01L45/065 ,  H01L45/1213 ,  H01L45/1233 ,  H01L45/141 ,  H01L45/143 ,  H01L45/144 ,  H01L51/0098 ,  H01L2223/6677 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/12044 ,  H01L2924/00014 ,  H01L2924/00

Abstract: The invention provides a semiconductor device which is non-volatile, easily manufactured, and can be additionally written. A semiconductor device of the invention includes a plurality of transistors, a conductive layer which functions as a source wiring or a drain wiring of the transistors, and a memory element which overlaps one of the plurality of transistors, and a conductive layer which functions as an antenna. The memory element includes a first conductive layer, an organic compound layer and a phase change layer, and a second conductive layer stacked in this order. The conductive layer which functions as an antenna and a conductive layer which functions as a source wiring or a drain wiring of the plurality of transistors are provided on the same layer.