公开(公告)号：US20230073850A1

公开(公告)日：2023-03-09

申请号：US17983140

申请日：2022-11-08

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Hiroatsu TODORIKI ,  Yumiko SAITO ,  Takahiro KAWAKAMI ,  Kuniharu NOMOTO ,  Mikio YUKAWA

IPC: H01M4/583 ,  H01G11/22 ,  H01M4/133 ,  H01G11/32 ,  H01M4/04 ,  H01M4/587 ,  H01M4/1393 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/23 ,  C01B32/192 ,  H01G9/042 ,  H01M4/139 ,  H01M4/62 ,  H01M6/16 ,  H01M10/0566 ,  H01G11/36

Abstract: The formation method of graphene includes the steps of forming a layer including graphene oxide over a first conductive layer; and supplying a potential at which the reduction reaction of the graphene oxide occurs to the first conductive layer in an electrolyte where the first conductive layer as a working electrode and a second conductive layer with a as a counter electrode are immersed. A manufacturing method of a power storage device including at least a positive electrode, a negative electrode, an electrolyte, and a separator includes a step of forming graphene for an active material layer of one of or both the positive electrode and the negative electrode by the formation method.

公开(公告)号：US20200350585A1

公开(公告)日：2020-11-05

申请号：US16935771

申请日：2020-07-22

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Hiroatsu TODORIKI ,  Yumiko SAITO ,  Takahiro KAWAKAMI ,  Kuniharu NOMOTO ,  Mikio YUKAWA

IPC: H01M4/583 ,  H01G11/22 ,  H01M4/133 ,  H01G11/32 ,  H01M4/04 ,  H01M4/587 ,  H01M4/1393 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/23 ,  C01B32/192 ,  H01G9/042 ,  H01M4/139 ,  H01M4/62 ,  H01M6/16 ,  H01M10/0566 ,  H01G11/36

Abstract: The formation method of graphene includes the steps of forming a layer including graphene oxide over a first conductive layer; and supplying a potential at which the reduction reaction of the graphene oxide occurs to the first conductive layer in an electrolyte where the first conductive layer as a working electrode and a second conductive layer with a as a counter electrode are immersed. A manufacturing method of a power storage device including at least a positive electrode, a negative electrode, an electrolyte, and a separator includes a step of forming graphene for an active material layer of one of or both the positive electrode and the negative electrode by the formation method.

公开(公告)号：US20170040590A1

公开(公告)日：2017-02-09

申请号：US15332157

申请日：2016-10-24

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Mikio YUKAWA

IPC: H01M4/04 ,  H01M4/136 ,  H01M10/0525 ,  H01M4/36 ,  H01M4/58 ,  H01M4/62 ,  H01M4/1397

CPC classification number: H01M4/0404 ,  H01M4/0416 ,  H01M4/043 ,  H01M4/0435 ,  H01M4/0471 ,  H01M4/049 ,  H01M4/13 ,  H01M4/136 ,  H01M4/139 ,  H01M4/1397 ,  H01M4/366 ,  H01M4/5805 ,  H01M4/5825 ,  H01M4/62 ,  H01M4/625 ,  H01M4/64 ,  H01M10/0525 ,  H01M2220/30 ,  Y02E60/122 ,  Y02P70/54

Abstract: To provide a method for forming a storage battery electrode including an active material layer with high density in which the proportion of conductive additive is low and the proportion of the active material is high. To provide a storage battery having a higher capacity per unit volume of an electrode with the use of a storage battery electrode formed by the formation method. A method for forming a storage battery electrode includes the steps of forming a mixture including an active material, graphene oxide, and a binder; providing a mixture over a current collector; and immersing the mixture provided over the current collector in a polar solvent containing a reducer, so that the graphene oxide is reduced.

Abstract translation: 提供一种形成具有导电性添加剂的比例低，活性物质的比例高的高密度的活性物质层的蓄电池电极的制造方法。 通过使用通过形成方法形成的蓄电池电极来提供具有每单位体积的电极的更高容量的蓄电池。 形成蓄电池电极的方法包括以下步骤：形成包括活性材料，氧化石墨烯和粘合剂的混合物; 在集电器上提供混合物; 并将设置在集电体上的混合物浸渍在含有还原剂的极性溶剂中，使得氧化石墨烯被还原。

公开(公告)号：US20160163470A1

公开(公告)日：2016-06-09

申请号：US15011857

申请日：2016-02-01

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Satoshi MURAKAMI ,  Kazutaka KURIKI ,  Mikio YUKAWA

IPC: H01G11/24 ,  H01M10/0525 ,  H01M4/52 ,  H01G11/46 ,  H01M4/48

CPC classification number: H01G11/24 ,  C23C16/24 ,  H01G11/30 ,  H01G11/46 ,  H01M4/0428 ,  H01M4/134 ,  H01M4/1395 ,  H01M4/48 ,  H01M4/52 ,  H01M4/661 ,  H01M10/0525 ,  H01M2220/20 ,  H01M2220/30 ,  Y02E60/122 ,  Y02E60/13 ,  Y02P70/54 ,  Y02T10/7022 ,  Y10T29/417 ,  Y10T29/49115

Abstract: A power storage device which can have an improved performance such as higher discharge capacity and in which deterioration due to peeling of an active material layer or the like is difficult to occur, and a method for manufacturing the power storage device are provided. The power storage device includes a current collector, a mixed layer formed over the current collector, and a crystalline silicon layer which is formed over the mixed layer and functions as an active material layer. The crystalline silicon layer includes a crystalline silicon region and a whisker-like crystalline silicon region including a plurality of protrusions projecting over the crystalline silicon region. The whisker-like crystalline silicon region includes a protrusion having a bending or branching portion.

Abstract translation: 能够提高放电容量等改善性能的蓄电装置，由于活性物质层等的剥离而导致的劣化难以发生，并且提供了蓄电装置的制造方法。 蓄电装置包括集电体，在集电体上形成的混合层，以及形成在混合层上并用作活性物质层的晶体硅层。 结晶硅层包括晶体硅区域和晶须状晶体硅区域，其包括在结晶硅区域上突出的多个突起。 晶须状结晶硅区域包括具有弯曲或分支部分的突起。

公开(公告)号：US20240266538A1

公开(公告)日：2024-08-08

申请号：US18635132

申请日：2024-04-15

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Hiroatsu TODORIKI ,  Yumiko SAITO ,  Takahiro KAWAKAMI ,  Kuniharu NOMOTO ,  Mikio YUKAWA

IPC: H01M4/583 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/192 ,  C01B32/23 ,  H01G9/042 ,  H01G11/22 ,  H01G11/32 ,  H01G11/36 ,  H01M4/04 ,  H01M4/133 ,  H01M4/139 ,  H01M4/1393 ,  H01M4/587 ,  H01M4/62 ,  H01M6/16 ,  H01M10/0525 ,  H01M10/0566

CPC classification number: H01M4/5835 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/192 ,  C01B32/23 ,  H01G9/042 ,  H01G11/22 ,  H01G11/32 ,  H01G11/36 ,  H01M4/0438 ,  H01M4/133 ,  H01M4/139 ,  H01M4/1393 ,  H01M4/587 ,  H01M4/62 ,  H01M6/16 ,  H01M10/0566 ,  H01M10/0525 ,  Y02E60/13

Abstract: The formation method of graphene includes the steps of forming a layer including graphene oxide over a first conductive layer; and supplying a potential at which the reduction reaction of the graphene oxide occurs to the first conductive layer in an electrolyte where the first conductive layer as a working electrode and a second conductive layer with a as a counter electrode are immersed. A manufacturing method of a power storage device including at least a positive electrode, a negative electrode, an electrolyte, and a separator includes a step of forming graphene for an active material layer of one of or both the positive electrode and the negative electrode by the formation method.

公开(公告)号：US20180315993A1

公开(公告)日：2018-11-01

申请号：US16025069

申请日：2018-07-02

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Mikio YUKAWA

IPC: H01M4/04 ,  H01M4/58 ,  H01M4/36 ,  H01M10/0525 ,  H01M4/62 ,  H01M4/1397 ,  H01M4/139 ,  H01M4/136 ,  H01M4/13 ,  H01M4/64

CPC classification number: H01M4/0404 ,  H01M4/0416 ,  H01M4/043 ,  H01M4/0435 ,  H01M4/0471 ,  H01M4/049 ,  H01M4/13 ,  H01M4/136 ,  H01M4/139 ,  H01M4/1397 ,  H01M4/366 ,  H01M4/5805 ,  H01M4/5825 ,  H01M4/62 ,  H01M4/625 ,  H01M4/64 ,  H01M10/0525 ,  H01M2220/30 ,  Y02E60/122 ,  Y02P70/54

Abstract: To provide a method for forming a storage battery electrode including an active material layer with high density in which the proportion of conductive additive is low and the proportion of the active material is high. To provide a storage battery having a higher capacity per unit volume of an electrode with the use of a storage battery electrode formed by the formation method. A method for forming a storage battery electrode includes the steps of forming a mixture including an active material, graphene oxide, and a binder; providing a mixture over a current collector; and immersing the mixture provided over the current collector in a polar solvent containing a reducer, so that the graphene oxide is reduced.

公开(公告)号：US20150303142A1

公开(公告)日：2015-10-22

申请号：US14755163

申请日：2015-06-30

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Mikio YUKAWA

IPC: H01L23/528 ,  H01L23/48 ,  H01L25/065 ,  H01L23/532

CPC classification number: H01L23/528 ,  H01L21/6835 ,  H01L21/76898 ,  H01L23/3675 ,  H01L23/481 ,  H01L23/53209 ,  H01L23/53228 ,  H01L23/53242 ,  H01L24/08 ,  H01L24/11 ,  H01L24/16 ,  H01L24/80 ,  H01L24/81 ,  H01L24/83 ,  H01L24/90 ,  H01L25/0657 ,  H01L25/50 ,  H01L2221/68372 ,  H01L2224/0401 ,  H01L2224/05009 ,  H01L2224/08146 ,  H01L2224/13009 ,  H01L2224/13025 ,  H01L2224/13099 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13169 ,  H01L2224/16 ,  H01L2224/16235 ,  H01L2224/2919 ,  H01L2224/73253 ,  H01L2224/80895 ,  H01L2224/81001 ,  H01L2224/811 ,  H01L2224/81136 ,  H01L2224/81801 ,  H01L2224/81894 ,  H01L2224/83138 ,  H01L2224/83851 ,  H01L2224/83907 ,  H01L2224/90 ,  H01L2224/9202 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/19041 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

Abstract: A semiconductor substrate provided with an integrated circuit is polished by CMP or the like, and the semiconductor substrate is made into a thin film by forming an embrittlement layer in the semiconductor substrate and separating a part of the semiconductor substrate; thus, semiconductor chips such as IC chips and LSI chips which are thinner than ever are obtained. Moreover, such thinned LSI chips are stacked and electrically connected through wirings penetrating through the semiconductor substrate; thus, a three dimensional semiconductor integrated circuit with improved packing density is obtained.

Abstract translation: 通过CMP等对具有集成电路的半导体基板进行研磨，通过在半导体基板上形成脆化层并分离半导体基板的一部分，将半导体基板制成薄膜; 从而获得比以往更薄的诸如IC芯片和LSI芯片的半导体芯片。 此外，这种稀薄的LSI芯片通过穿过半导体衬底的布线堆叠并电连接; 从而获得具有改进的堆积密度的三维半导体集成电路。

公开(公告)号：US20140295068A1

公开(公告)日：2014-10-02

申请号：US14220310

申请日：2014-03-20

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Kenryo NANBA ,  Mikio YUKAWA

IPC: H01M4/04

CPC classification number: H01M4/139 ,  B32B3/30 ,  B32B5/022 ,  B32B15/08 ,  B32B15/12 ,  B32B15/14 ,  B32B21/06 ,  B32B27/00 ,  B32B37/10 ,  B32B37/144 ,  B32B37/24 ,  B32B2037/243 ,  B32B2255/06 ,  B32B2255/20 ,  B32B2305/02 ,  B32B2305/20 ,  B32B2307/202 ,  B32B2307/206 ,  B32B2317/12 ,  B32B2457/10 ,  H01M4/0404 ,  H01M4/0435 ,  H01M4/0471 ,  H01M4/049 ,  H01M4/625 ,  H01M10/0525 ,  H01M2220/30 ,  Y02E60/122 ,  Y02P70/54

Abstract: To provide a storage battery electrode including an active material layer with high density that contains a smaller percentage of conductive additive. To provide a storage battery having a higher capacity per unit volume of an electrode with the use of the electrode for a storage battery. A slurry that contains an active material and graphene oxide is applied to a current collector and dried to form an active material layer over the current collector, the active material layer over the current collector is rolled up together with a spacer, and a rolled electrode which includes the spacer are immersed in a reducing solution so that graphene oxide is reduced.

Abstract translation: 提供一种包含含有较小百分比的导电添加剂的高密度活性物质层的蓄电池电极。 为了提供一种具有使用电池用蓄电池的每单位体积电极的容量的蓄电池。 将含有活性物质和石墨烯氧化物的浆液施加到集电体上并干燥，在集电体上形成活性物质层，集电体上方的活性物质层与间隔物一起卷起，轧制电极 包括将间隔物浸入还原溶液中以使氧化石墨烯被还原。

公开(公告)号：US20220115668A1

公开(公告)日：2022-04-14

申请号：US17556384

申请日：2021-12-20

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Hiroatsu TODORIKI ,  Mikio YUKAWA ,  Yumiko SAITO ,  Masaki YAMAKAJI ,  Rika YATABE ,  Tatsuya IKENUMA

IPC: H01M4/62 ,  H01M4/36 ,  H01M10/052 ,  H01M4/136 ,  H01M4/58 ,  C01B32/23

Abstract: A graphene oxide used as a raw material of a conductive additive for forming an active material layer with high electron conductivity with a small amount of a conductive additive is provided. A positive electrode for a nonaqueous secondary battery using the graphene oxide as a conductive additive is provided. The graphene oxide is used as a raw material of a conductive additive in a positive electrode for a nonaqueous secondary battery and, in the graphene oxide, the atomic ratio of oxygen to carbon is greater than or equal to 0.405.

公开(公告)号：US20170309905A1

公开(公告)日：2017-10-26

申请号：US15625476

申请日：2017-06-16

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Kazutaka KURIKI ,  Mikio YUKAWA ,  Yuji ASANO

IPC: H01M4/38 ,  H01M12/08 ,  H01M10/0569 ,  H01G11/68 ,  H01G11/22 ,  H01G11/70 ,  H01M4/66 ,  H01M10/0525

CPC classification number: H01M4/386 ,  C30B25/005 ,  C30B29/06 ,  C30B29/62 ,  C30B33/02 ,  H01G11/06 ,  H01G11/22 ,  H01G11/26 ,  H01G11/28 ,  H01G11/30 ,  H01G11/46 ,  H01G11/50 ,  H01G11/68 ,  H01G11/70 ,  H01L21/02532 ,  H01L21/02587 ,  H01L21/0262 ,  H01L28/82 ,  H01M4/0428 ,  H01M4/134 ,  H01M4/1395 ,  H01M4/382 ,  H01M4/661 ,  H01M4/667 ,  H01M10/0525 ,  H01M10/0569 ,  H01M10/0583 ,  H01M12/08 ,  H01M2300/0037 ,  Y02E60/13 ,  Y02P70/54 ,  Y02T10/7011 ,  Y02T10/7022

Abstract: Provided is a method for manufacturing a power storage device in which a crystalline silicon layer including a whisker-like crystalline silicon region is formed as an active material layer over a current collector by a low-pressure CVD method in which heating is performed using a deposition gas containing silicon. The power storage device includes the current collector, a mixed layer formed over the current collector, and the crystalline silicon layer functioning as the active material layer formed over the mixed layer. The crystalline silicon layer includes a crystalline silicon region and a whisker-like crystalline silicon region including a plurality of protrusions which project over the crystalline silicon region. With the protrusions, the surface area of the crystalline silicon layer functioning as the active material layer can be increased,