- 专利标题： SILICON GERMANIUM-ON-INSULATOR FORMATION BY THERMAL MIXING
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申请号： US15237260申请日： 2016-08-15
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公开(公告)号： US20160359023A1公开(公告)日： 2016-12-08
- 发明人: Stephen W. Bedell , Joel P. De Souza , Jeehwan Kim , Devendra K. Sadana
- 申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 主分类号： H01L29/66
- IPC分类号： H01L29/66 ; H01L21/288 ; H01L21/02 ; H01L21/24 ; H01L29/10 ; H01L29/78
摘要：
A layer of amorphous silicon is formed on a germanium-on-insulator substrate, or a layer of germanium is formed on a silicon-on-insulator substrate. An anneal is then performed which causes thermal mixing of silicon and germanium atoms within one of the aforementioned structures and subsequent formation of a silicon germanium-on-insulator material.
公开/授权文献
- US10249737B2 Silicon germanium-on-insulator formation by thermal mixing 公开/授权日：2019-04-02
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