发明申请
US20160359058A1 Selective Plating of Copper on Transparent Conductive Oxide, Solar Cell Structure and Manufacturing Method
审中-公开
透明导电氧化物上的铜的选择性电镀,太阳能电池结构和制造方法
- 专利标题: Selective Plating of Copper on Transparent Conductive Oxide, Solar Cell Structure and Manufacturing Method
- 专利标题(中): 透明导电氧化物上的铜的选择性电镀,太阳能电池结构和制造方法
-
申请号: US15176971申请日: 2016-06-08
-
公开(公告)号: US20160359058A1公开(公告)日: 2016-12-08
- 发明人: Stanislau Herasimenka , Mikhael Reginevich
- 申请人: Stanislau Herasimenka , Mikhael Reginevich
- 主分类号: H01L31/0224
- IPC分类号: H01L31/0224 ; H01L31/0747
摘要:
A solar cell includes a silicon substrate having a transparent conductive oxide (TCO) film formed on a surface thereof, a dielectric mask having openings formed on a surface of the TCO film, a seed layer formed in the openings of the dielectric mask, and a copper plating later formed on the seed layer. In a method of forming a solar cell, a TCO film is applied to a surface of a silicon substrate, a dielectric mask is formed on a surface of the TCO film, a metal seed layer is applied to openings in the dielectric mask by in-situ hydrogen plasma treatment, and copper metal is plated onto the metal seed layer via light induced plating or field induced plating to form a copper electrode. The solar cell may then be annealed to form an indium-copper alloy which improves adhesion of the copper electrode.