发明申请
US20160359058A1 Selective Plating of Copper on Transparent Conductive Oxide, Solar Cell Structure and Manufacturing Method 审中-公开
透明导电氧化物上的铜的选择性电镀,太阳能电池结构和制造方法

Selective Plating of Copper on Transparent Conductive Oxide, Solar Cell Structure and Manufacturing Method
摘要:
A solar cell includes a silicon substrate having a transparent conductive oxide (TCO) film formed on a surface thereof, a dielectric mask having openings formed on a surface of the TCO film, a seed layer formed in the openings of the dielectric mask, and a copper plating later formed on the seed layer. In a method of forming a solar cell, a TCO film is applied to a surface of a silicon substrate, a dielectric mask is formed on a surface of the TCO film, a metal seed layer is applied to openings in the dielectric mask by in-situ hydrogen plasma treatment, and copper metal is plated onto the metal seed layer via light induced plating or field induced plating to form a copper electrode. The solar cell may then be annealed to form an indium-copper alloy which improves adhesion of the copper electrode.
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