Selective Plating of Copper on Transparent Conductive Oxide, Solar Cell Structure and Manufacturing Method
    1.
    发明申请
    Selective Plating of Copper on Transparent Conductive Oxide, Solar Cell Structure and Manufacturing Method 审中-公开
    透明导电氧化物上的铜的选择性电镀,太阳能电池结构和制造方法

    公开(公告)号:US20160359058A1

    公开(公告)日:2016-12-08

    申请号:US15176971

    申请日:2016-06-08

    IPC分类号: H01L31/0224 H01L31/0747

    摘要: A solar cell includes a silicon substrate having a transparent conductive oxide (TCO) film formed on a surface thereof, a dielectric mask having openings formed on a surface of the TCO film, a seed layer formed in the openings of the dielectric mask, and a copper plating later formed on the seed layer. In a method of forming a solar cell, a TCO film is applied to a surface of a silicon substrate, a dielectric mask is formed on a surface of the TCO film, a metal seed layer is applied to openings in the dielectric mask by in-situ hydrogen plasma treatment, and copper metal is plated onto the metal seed layer via light induced plating or field induced plating to form a copper electrode. The solar cell may then be annealed to form an indium-copper alloy which improves adhesion of the copper electrode.

    摘要翻译: 太阳能电池包括在其表面上形成有透明导电氧化物(TCO)膜的硅基板,在TCO膜的表面上形成的开口的电介质掩模,形成在电介质掩模的开口中的晶种层,以及 稍后在种子层上形成铜电镀。 在形成太阳能电池的方法中,将TCO膜施加到硅衬底的表面,在TCO膜的表面上形成电介质掩模,通过介电掩模将金属种子层施加到电介质掩模中的开口, 通过原位氢等离子体处理,通过光诱导电镀或场诱导电镀将金属铜镀在金属种子层上,形成铜电极。 然后可以将太阳能电池退火以形成提高铜电极的附着力的铟 - 铜合金。

    Transparent conductive oxide in silicon heterojunction solar cells

    公开(公告)号:US10396219B2

    公开(公告)日:2019-08-27

    申请号:US15625426

    申请日:2017-06-16

    摘要: Devices and methods for reducing optical losses in transparent conductive oxides (TCOs) used in silicon heterojunction (SHJ) solar cells while enhancing series resistance are disclosed herein. In particular, the methods include reducing the thickness of TCO layers by about 200% to 300% and depositing hydrogenated dielectric layers on top to form double layers of antireflection coating. It has been discovered that the conductivity of a thin TCO layer can be increased through a hydrogen treatment supplied from the capping dielectric during the post deposition annealing. The optimized cells with ITO/SiOx:H stacks achieved more than 41 mA/cm2 generation current on 120-micron-thick wafers while having approximately 100 Ohm/square sheet resistance. Further, solar cells and methods may include integration of ITO/SiOx:H stacks with Cu plating and use ITO/SiNx/SiOx triple layer antireflection coatings. The experimental data details the improved optics and resistance in cell stacks with varying materials and thicknesses.

    SYSTEMS, METHODS, AND MEDIA FOR LASER DEPOSITION
    4.
    发明申请
    SYSTEMS, METHODS, AND MEDIA FOR LASER DEPOSITION 审中-公开
    用于激光沉积的系统,方法和介质

    公开(公告)号:US20150017758A1

    公开(公告)日:2015-01-15

    申请号:US14329650

    申请日:2014-07-11

    IPC分类号: H01L31/18 C23C14/28 C23C14/16

    摘要: In accordance with some embodiments of the disclosed subject matter, mechanisms for pulsed laser deposition are provided. In some embodiments, a system for pulsed laser deposition is provided, the system comprising: a pulsed laser configured to project a pulsed laser beam at a rotating target material and cause metal clusters to be ablated from the rotating target material; and a confinement mechanism configured to control deposition of the metal clusters on a substrate.

    摘要翻译: 根据所公开的主题的一些实施例,提供用于脉冲激光沉积的机构。 在一些实施例中,提供了一种用于脉冲激光沉积的系统,所述系统包括:脉冲激光器,被配置为将脉冲激光束投射在旋转的靶材料上,并使金属簇从旋转靶材料中烧蚀; 以及构造成控制金属簇在基板上的沉积的约束机构。

    Transparent Conductive Oxide in Silicon Heterojunction Solar Cells

    公开(公告)号:US20190393365A1

    公开(公告)日:2019-12-26

    申请号:US16550988

    申请日:2019-08-26

    摘要: Devices and methods for reducing optical losses in transparent conductive oxides (TCOs) used in silicon heterojunction (SHJ) solar cells while enhancing series resistance are disclosed herein. In particular, the methods include reducing the thickness of TCO layers by about 200% to 300% and depositing hydrogenated dielectric layers on top to form double layers of antireflection coating. It has been discovered that the conductivity of a thin TCO layer can be increased through a hydrogen treatment supplied from the capping dielectric during the post deposition annealing. The optimized cells with ITO/SiOx:H stacks achieved more than 41 mA/cm2 generation current on 120-micron-thick wafers while having approximately 100 Ohm/square sheet resistance. Further, solar cells and methods may include integration of ITO/SiOx:H stacks with Cu plating and use ITO/SiNx/SiOx triple layer antireflection coatings. The experimental data details the improved optics and resistance in cell stacks with varying materials and thicknesses.

    Transparent Conductive Oxide In Silicon Heterojunction Solar Cells

    公开(公告)号:US20170365724A1

    公开(公告)日:2017-12-21

    申请号:US15625426

    申请日:2017-06-16

    摘要: Devices and methods for reducing optical losses in transparent conductive oxides (TCOs) used in silicon heterojunction (SHJ) solar cells while enhancing series resistance are disclosed herein. In particular, the methods include reducing the thickness of TCO layers by about 200% to 300% and depositing hydrogenated dielectric layers on top to form double layers of antireflection coating. It has been discovered that the conductivity of a thin TCO layer can be increased through a hydrogen treatment supplied from the capping dielectric during the post deposition annealing. The optimized cells with ITO/SiOx:H stacks achieved more than 41 mA/cm2 generation current on 120-micron-thick wafers while having approximately 100 Ohm/square sheet resistance. Further, solar cells and methods may include integration of ITO/SiOx:H stacks with Cu plating and use ITO/SiNx/SiOx triple layer antireflection coatings. The experimental data details the improved optics and resistance in cell stacks with varying materials and thicknesses.

    METHODS AND APPARATUSES FOR MANUFACTURING SELF-ALIGNED INTEGRATED BACK CONTACT HETEROJUNCTION SOLAR CELLS
    8.
    发明申请
    METHODS AND APPARATUSES FOR MANUFACTURING SELF-ALIGNED INTEGRATED BACK CONTACT HETEROJUNCTION SOLAR CELLS 有权
    用于制造自对准集成反接触异质太阳能电池的方法和装置

    公开(公告)号:US20150295125A1

    公开(公告)日:2015-10-15

    申请号:US14682833

    申请日:2015-04-09

    摘要: Methods and apparatuses for manufacturing self-aligned integrated back contact heterojunction solar cells are provided. In some embodiments, systems for forming a solar cell on a substrate are provided, the systems comprising: a master shadow mask positioned adjacent to the substrate on a first side of the master shadow mask; a first blocking mask placed adjacent to a second side of the master shadow mask; and a deposition machine that deposits material on the substrate through holes in the master shadow mask and the first blocking mask.

    摘要翻译: 提供了用于制造自对准集成背接触异质结太阳能电池的方法和装置。 在一些实施例中,提供了用于在衬底上形成太阳能电池的系统,所述系统包括:在主荫罩的第一侧上与衬底相邻定位的主荫罩; 与主荫罩的第二侧相邻放置的第一阻挡掩模; 以及通过主荫罩和第一阻挡掩模中的孔将材料沉积在基板上的沉积机。