Invention Application
- Patent Title: QUANTUM WELL MOSFET CHANNELS HAVING LATTICE MISMATCH WITH METAL SOURCE/DRAINS, AND CONFORMAL REGROWTH SOURCE/DRAINS
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Application No.: US15219193Application Date: 2016-07-25
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Publication No.: US20160372574A1Publication Date: 2016-12-22
- Inventor: Prashant Majhi , Mantu K. Hudait , Jack T. Kavalieros , Ravi Pillarisetty , Marko Radosavljevic , Gilbert Dewey , Titash Rakshit , Willman Tsai
- Applicant: INTEL CORPORATION
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L21/768 ; H01L29/80 ; H01L29/51 ; H01L29/778 ; H01L29/78 ; H01L29/15 ; H01L29/417
Abstract:
Embodiments described include straining transistor quantum well (QW) channel regions with metal source/drains, and conformal regrowth source/drains to impart a uni-axial strain in a MOS channel region. Removed portions of a channel layer may be filled with a junction material having a lattice spacing different than that of the channel material to causes a uni-axial strain in the channel, in addition to a bi-axial strain caused in the channel layer by a top barrier layer and a bottom buffer layer of the quantum well.
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