Invention Application
US20160377769A1 SUBSTRATE WITH MULTILAYER REFLECTIVE FILM, MASK BLANK, TRANSFER MASK AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
具有多层反射膜,掩模层,传输掩模和制造半导体器件的方法的衬底

  • Patent Title: SUBSTRATE WITH MULTILAYER REFLECTIVE FILM, MASK BLANK, TRANSFER MASK AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
  • Patent Title (中): 具有多层反射膜,掩模层,传输掩模和制造半导体器件的方法的衬底
  • Application No.: US14901575
    Application Date: 2014-09-25
  • Publication No.: US20160377769A1
    Publication Date: 2016-12-29
  • Inventor: Kazuhiro HAMAMOTOToshihiko ORIHARA
  • Applicant: HOYA CORPORATION
  • Applicant Address: JP Tokyo
  • Assignee: HOYA CORPORATION
  • Current Assignee: HOYA CORPORATION
  • Current Assignee Address: JP Tokyo
  • Priority: JP2013-202493 20130927
  • International Application: PCT/JP2014/075379 WO 20140925
  • Main IPC: G02B5/08
  • IPC: G02B5/08 G03F1/24 G03F7/20 G02B1/14 G02B5/00
SUBSTRATE WITH MULTILAYER REFLECTIVE FILM, MASK BLANK, TRANSFER MASK AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
Abstract:
A substrate with a multilayer reflective film capable of facilitating the discovery of contaminants, scratches and other critical defects by inhibiting the detection of pseudo defects attributable to surface roughness of a substrate or film in a defect inspection using a highly sensitive defect inspection apparatus.The substrate with a multilayer reflective film has a multilayer reflective film obtained by alternately laminating a high refractive index layer and a low refractive index layer on a main surface of a mask blank substrate used in lithography, wherein an integrated value I of the power spectrum density (PSD) at a spatial frequency of 1 μm−1 to 10 μm−1 of the surface of the substrate with a multilayer reflective film, obtained by measuring a region measuring 3 μm×3 μm with an atomic force microscope, is not more than 180×10−3 nm3, and the maximum value of the power spectrum density (PSD) at a spatial frequency of 1 μm−1 to 10 μm−1 is not more than 50 nm4.
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