Invention Application
US20160380088A1 BIPOLAR JUNCTION TRANSISTORS WITH A BURIED DIELECTRIC REGION IN THE ACTIVE DEVICE REGION
有权
具有活动设备区域中的电介质区域的双极性连接晶体管
- Patent Title: BIPOLAR JUNCTION TRANSISTORS WITH A BURIED DIELECTRIC REGION IN THE ACTIVE DEVICE REGION
- Patent Title (中): 具有活动设备区域中的电介质区域的双极性连接晶体管
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Application No.: US14747668Application Date: 2015-06-23
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Publication No.: US20160380088A1Publication Date: 2016-12-29
- Inventor: Renata Camillo-Castillo , Vibhor Jain , Marwan H. Khater
- Applicant: GLOBALFOUNDRIES INC.
- Main IPC: H01L29/737
- IPC: H01L29/737 ; H01L21/762 ; H01L29/08 ; H01L21/265 ; H01L29/06 ; H01L29/66 ; H01L21/764
Abstract:
Device structure and fabrication methods for a bipolar junction transistor. A trench isolation region is formed that bounds an active device region along a sidewall. A dielectric region is formed that extends laterally from the sidewall of the active device region into the active device region. The dielectric region is located beneath a top surface of the active device region such that a section of the active device region is located between the top surface and the dielectric region.
Public/Granted literature
- US09722057B2 Bipolar junction transistors with a buried dielectric region in the active device region Public/Granted day:2017-08-01
Information query
IPC分类:
